Preparation method of patterned substrate

Patent metadata

Field	Value
Publication number	US-11613068-B2
Application number	US-201816642266-A
Country	US
Kind code	B2
Filing date	Sep 13, 2018
Priority date	Sep 13, 2017
Publication date	Mar 28, 2023
Grant date	Mar 28, 2023

Abstract

A method for preparing a patterned substrate includes selectively etching any one segment block of a self-assembled block copolymer from a laminate having a substrate; wherein a block copolymer membrane is formed on the substrate and the substrate contains the self-assembled block copolymer. According to the method, the self-assembled pattern of the block copolymer can be efficiently and accurately transferred on the substrate to prepare a patterened substate.

First claim

The invention claimed is:

1. A method for preparing a patterned substrate comprising:
selectively etching any one segment block of a self-assembled block copolymer from a laminate having a substrate;
wherein a block copolymer membrane is formed on the substrate and the substrate contains the self-assembled block copolymer,
wherein the selectively etching is performed using a reaction gas containing fluorocarbon and oxygen, and
the selectively etching is performed while maintaining a ratio (A/B) of a flow rate (A) of the fluorocarbon to a flow rate (B) of the oxygen in a range of 0.5 to 7.5,
wherein the self-assembled block copolymer comprises a polymer segment A block including a chain having 8 or more chain-forming atoms and a polymer segment B block having a structure different from that of the polymer segment A block,
wherein the polymer segment A block comprises a ring structure and the chain is substituted on the ring structure, and
wherein the ring structure of the polymer segment A block comprises no halogen atom and the polymer segment B block has a ring structure including a halogen atom.

2. The method according to claim 1 , wherein the selectively etching maintains a flow rate of fluorocarbon of more than 0 sccm and 50 sccm or less.

3. The method according to claim 1 , wherein the selectively etching maintains a flow rate of oxygen of more than 0 sccm and 35 sccm or less.

4. The method according to claim 1 , wherein the selectively etching further supplies an inert gas at a flow rate of 200 sccm or less.

5. The method according to claim 4 , wherein the etching maintains the ratio (A/C) of the flow rate (A) of the fluorocarbon to the flow rate (C) of the inert gas in a range of 0.1 to 1.

6. The method according to claim 1 , wherein the fluorocarbon has two or more fluorine atoms and a molar ratio (F/C) of the fluorine atom (F) to the carbon atom (C) is 2 or more.

7. The method according to claim 1 , wherein the reaction gas in the selectively etching consists of fluorocarbon and oxygen, or consists of fluorocarbon, oxygen and an inert gas.

8. The method according to claim 1 , wherein a range of the applied electric power in the etching step is maintained in the range of 150W to 400W.

9. The method according to claim 1 , wherein the selectively etching is performed in a chamber in which two opposite cathode and anode are present, the substrate on which the block copolymer membrane is formed is positioned on the cathode between the cathode and the anode, and an RF power source is applied to the cathode.

10. The method according to claim 1 , wherein the block copolymer comprises a polymer segment A block and a polymer segment B block having a structure different from that of the polymer segment A block, and the polymer segment A block and the polymer segment B block each comprise a ring structure.

11. The method according to claim 10 , wherein the ring structure of the polymer segment A block comprises no halogen atom, and the ring structure of the polymer segment B block comprises a halogen atom.

12. The method according to claim 10 , wherein a chain having 8 or more chain-forming atoms is substituted on the ring structure of the polymer segment A block.

13. The method according to claim 1 , further comprising etching the substrate using the block copolymer membrane, from which the any one segment block has been removed, as a mask.

Assignees

• Lg Chemical Ltd

Inventors

• Ryu Hyung Ju
• Yoon Sung Soo
• Ku Se Jin

Classifications

• H10P50/287

  by chemical means · CPC title

• H10P50/692

  characterised by their composition, e.g. multilayer masks or materials · CPC title

• B29C59/14 Primary

  by plasma treatment {(plasma tubes per se H01J)} · CPC title

• C08F220/301

  and one oxygen in the alcohol moiety · CPC title

• G03F7/004 Primary

  Photosensitive materials (G03F7/12, G03F7/14 take precedence) · CPC title