Simultaneous selective deposition of two different materials on two different surfaces

Patent metadata

Field	Value
Publication number	US-11608557-B2
Application number	US-202117216260-A
Country	US
Kind code	B2
Filing date	Mar 29, 2021
Priority date	Mar 30, 2020
Publication date	Mar 21, 2023
Grant date	Mar 21, 2023

Abstract

In some embodiments, methods are provided for simultaneously and selectively depositing a first material on a first surface of a substrate and a second, different material on a second, different surface of the same substrate using the same reaction chemistries. For example, a first material may be selectively deposited on a metal surface while a second material is simultaneously and selectively deposited on an adjacent dielectric surface. The first material and the second material have different material properties, such as different etch rates.

First claim

What is claimed is:

1. A method of selectively depositing a first material on a first surface of a substrate and a second, different material on a second, different surface of the substrate, the method comprising one or more first deposition cycles comprising:
exposing the first and second surfaces of the substrate to a passivation agent, such that the passivation agent selectively forms a passivation layer on the first surface relative to the second surface;
exposing the first and second surfaces of the substrate to a first metal or semimetal reactant, such that the first metal or semimetal reactant reacts with the second surface to form a layer of reactant species comprising the metal or semimetal from the first metal or semimetal reactant but does not react with the first surface; and
exposing the first and second surfaces of the substrate to a second metal or semimetal reactant, such that the second metal or semimetal reactant penetrates the passivation layer on the first surface and reacts with the first and second surfaces to form the first material on the first surface and the second material on the second surface,
whereby the second material comprising a first metal or semimetal from the first metal or semimetal reactant and a second metal or semimetal from the second metal or semimetal reactant is formed on the second surface and not on the first surface, and
the first material comprising the second metal or semimetal from the second metal or semimetal reactant is formed on the first surface and not on the second surface.

2. The method of claim 1 , wherein the first surface comprises a metal and the second surface comprises a dielectric material.

3. The method of claim 2 , wherein the metal is Co, Cu, W, Ru and/or Ni.

4. The method of claim 2 , wherein the dielectric material comprises silicon dioxide (SiO 2 ), silicon nitride (SiN), and/or silicon oxide carbide (SiOC).

5. The method of claim 1 , wherein the first material has a different etch rate, different conductivity, or different refractive index from the second material.

6. The method of claim 1 , additionally comprising contacting the first and second surfaces with an additional reactant comprising an oxygen reactant, a nitrogen reactant or a carbon reactant.

7. The method of claim 6 , wherein the first surface is a metal surface, the second surface is a dielectric surface, the passivation agent is Hthd, Hfac or Hacac, the first metal or semimetal reactant is diethylaminosilane or hexakis(ethylamino)disilane, the second metal or semimetal reactant is trimethyl aluminum (TMA) and the additional reactant is an oxygen reactant comprising water.

8. The method of claim 1 , wherein the method additionally comprises one or more second deposition cycles comprising alternately and sequentially contacting the substrate with the passivation agent and the first metal or semimetal reactant.

9. The method of claim 8 , wherein the one or more second deposition cycles additionally comprise contacting the substrate with an oxygen reactant, nitrogen reactant and/or carbon reactant.

10. The method of claim 8 , wherein the first deposition cycle is repeated X times and second deposition cycle is repeated Y times, where X and Y are integers.

11. The method of claim 1 , wherein the passivation agent comprises a di-imine or a beta-diketonate.

12. The method of claim 1 , wherein the passivation layer sterically prevents the first metal or semimetal reactant from reacting with the first surface.

13. The method of claim 1 , wherein the first metal or semimetal reactant comprises hexamethyldisilazane (HMDS), tetramethyldisilazane (TMDS), diethylaminosilane and/or hexakis(ethylamino)disilane.

14. The method of claim 1 , wherein the second metal or semimetal reactant comprises aluminum, zirconium, hafnium, titanium, lanthanum, and/or erbium.

15. A method of depositing two different materials on a substrate comprising:
selectively and simultaneously depositing a first material on a first surface of a substrate and a second, different material on a second, different surface of the substrate by simultaneously contacting the first surface and second surface of the substrate with sequential pulses of the same vapor-phase reactants,
wherein simultaneously contacting the first surface and second surface of the substrate with sequential pulses of the same vapor-phase reactants comprises:
exposing the first and second surfaces to a passivation agent, such that the passivation agent selectively forms a passivation layer on the first surface relative to the second surface;
exposing the first and second surfaces to a first reactant, wherein the first reactant comprises a first metal or semimetal, such that the first reactant reacts with the second surface to form a layer of reactant species comprising the metal or semimetal from the first reactant but does not react with the first surface; and
exposing the first and second surfaces to a second reactant, wherein the second reactant comprises a second metal or semimetal, and wherein the second reactant penetrates the passivation layer on the first surface such that the second reactant reacts with the first and second surfaces to form the first material on the first surface and the second material on the second surface.

16. The method of claim 15 , wherein selectively-depositing the first material and the second material is performed without exposure to ambient air.

17. The method of claim 15 , wherein the passivation agent comprises a beta-diketonate.

18. The method of claim 15 , wherein the first reactant comprises HMDS, TMDS, diethylaminosilane, and/or hexakis(ethylamino)disilane.

19. The method of claim 15 , wherein the second reactant comprises aluminum, zirconium, hafnium, titanium, lanthanum, and/or erbium.

Assignees

• Asm Ip Holding Bv

Inventors

• Givens Michael Eugene
• Tois Eva
• Haukka Suvi
• Nevstrueva Daria
• Dezelah Charles

Classifications

• H10P14/61

  using masks · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10P14/6929

  the material containing aluminium, e.g. AlSiOx · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title