III-nitride nanowire LED with strain modified surface active region and method of making thereof
US-10205054-B2 · Feb 12, 2019 · US
US11605758B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11605758-B2 |
| Application number | US-201916252144-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 18, 2019 |
| Priority date | Jul 7, 2008 |
| Publication date | Mar 14, 2023 |
| Grant date | Mar 14, 2023 |
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The device according to the invention comprises a nanostructured LED with a first group of nanowires protruding from a first area of a substrate and a contacting means in a second area of the substrate. Each nanowire of the first group of nanowires comprises a p-i-n-junction and a top portion of each nanowire or at least one selection of nanowires is covered with a light-reflecting contact layer. The contacting means of the second area is in electrical contact with the bottom of the nanowires, the light-reflecting contact layer being in electrical contact with the contacting means of the second area via the p-i-n-junction. Thus when a voltage is applied between the contacting means of the second area and the light-reflecting contact layer, light is generated within the nanowire. On top of the light-reflecting contact layer, a first group of contact pads for flip-chip bonding can be provided, distributed and separated to equalize the voltage across the layer to reduce the average serial resistance.
Opening claim text (preview).
The invention claimed is: 1. A light emitting diode (LED) display device comprising: LED die comprising red LEDs, green LEDs, and blue LEDs each comprising a respective GaN buffer layer, and that each comprise pixels of a red-green-blue display device; and a sub-mount comprising transistors for driving the pixels and contact pads attached to p-contact pads and n-contact pads of the LED die, wherein: the red LEDs are configured to emit red light through the buffer layer upon application of voltage thereto, the red LEDs comprise a gallium nitride or an indium gallium nitride layer; the green LEDs are configured to emit green light through the buffer layer upon application of voltage thereto; the blue LEDs are configured to emit blue light through the buffer layer upon application of voltage thereto; the red LEDs, the green LEDs and the blue LEDs comprise a semiconductor material core of a first conductivity type, a semiconductor material active region located radially outward of the semiconductor material core, and a semiconductor material shell of a second conductivity type located radially outward of the semiconductor material active region; and the red LEDs, the green LEDs and the blue LEDs comprise a plurality of contact groups of red LEDs, green LEDs and blue LEDs, respectively, wherein each of the red LEDs, the green LEDs and the blue LEDs within a contact group are electrically connected in parallel, and the plurality of contact groups of red LEDs, green LEDs and blue LEDs are arranged in a two-dimensional array on the sub-mount and each contact group of red LEDs, green LEDs and blue LEDs is individually and exclusively addressable based on a column and row location of the respective contact group within the two-dimensional array. 2. The LED display device of claim 1 , wherein the red LEDs, the green LEDs and the blue LEDs comprise nanowires. 3. The LED display of claim 2 , further comprising an electrically conductive material that extends down the sidewalls of at least a portion of the nanowires of the red LEDs, the green LEDs and the blue LEDs. 4. The LED display device of claim 1 , wherein the red LEDs, the green LEDs and the blue LEDs comprise pn or p-i-n junctions. 5. The LED display device of claim 1 , wherein the gallium nitride or the indium gallium nitride layer in the red LEDs comprises the GaN buffer layer. 6. The LED display device of claim 1 , wherein the red LEDs comprise an active layer which is the indium gallium nitride layer. 7. The LED display device of claim 1 , further comprising a transparent contact layer or a light-reflecting layer covering at least a portion of the red LEDs, the green LEDs and the blue LEDs. 8. The LED display device of claim 1 , wherein each of the red LEDs, the green LEDs and the blue LEDs within the contact group are electrically connected in parallel via a first contact pad to a same row line and a same column line, and are electrically connected via a second contact pad to a common contact of a plurality of contact groups.
Multi-layer electrodes comprising at least one discontinuous layer · CPC title
having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies · CPC title
Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units · CPC title
having quantum effect structures or superlattices, e.g. tunnel junctions · CPC title
Two-dimensional arrangements, e.g. asymmetric LED layout · CPC title
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