Semiconductor manufacturing device and semiconductor manufacturing method
US-2017260628-A1 · Sep 14, 2017 · US
Optimized heteroepitaxial growth of semiconductors
US11603603B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11603603-B2 |
| Application number | US-202217661052-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 28, 2022 |
| Priority date | Jun 6, 2018 |
| Publication date | Mar 14, 2023 |
| Grant date | Mar 14, 2023 |
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- Title
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Abstract
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A method of performing heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and a second precursor gas, to form a heteroepitaxial growth of one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN on the substrate; wherein the substrate comprises one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN; wherein the carrier gas is H 2 , wherein the first precursor is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the second precursor is one of AsH 3 (arsine), PH 3 (phosphine), H 2 Se (hydrogen selenide), H 2 Te (hydrogen telluride), SbH 3 (hydrogen antimonide), H 2 S (hydrogen sulfide), and NH 3 (ammonia). The process may be an HVPE (hydride vapor phase epitaxy) process.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of performing heteroepitaxy, comprising: exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and a second precursor gas, to form a heteroepitaxial growth of α-GaSe (gallium selenide) on the substrate; wherein the substrate comprises GaP; wherein the carrier gas is H 2 , wherein the first precursor is HCl, the Group II/III element comprises Ga; and wherein the second precursor is H 2 Se (hydrogen selenide). 2. A method of performing heteroepitaxy, comprising: exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and a second precursor gas, to form a heteroepitaxial growth of CdSe (cadmium selenide) on the substrate; wherein the substrate comprises InAs; wherein the carrier gas is H 2 , wherein the first precursor is HCl, the Group II/III element comprises Cd; and wherein the second precursor is H 2 Se (hydrogen selenide).
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Classifications
Deposition of epitaxial materials · CPC title
being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title
being Group IIB-VIA materials · CPC title
Antimonides · CPC title
Arsenides · CPC title
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- What does patent US11603603B2 cover?
- A method of performing heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and a second precursor gas, to form a heteroepitaxial growth of one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN on the substrate; wherein the substrate comprises one of GaAs, AlAs, InAs, GaP, I…
- Who is the assignee on this patent?
- Us Gov Air Force, United States of Americas as represented by the Secretary of the Air Force
- What technology area does this patent fall under?
- Primary CPC classification H10P14/2905. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 14 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).