Plasmonically enhanced, ultra-sensitive bolometric mid-infrared detector

Patent metadata

Field	Value
Publication number	US-11598672-B2
Application number	US-202117545406-A
Country	US
Kind code	B2
Filing date	Dec 8, 2021
Priority date	Dec 9, 2020
Publication date	Mar 7, 2023
Grant date	Mar 7, 2023

Abstract

The present invention features a novel design for a bolometric infrared detector focused on LWIR range for human body high-resolution temperature sensing. The present invention incorporates an efficient plasmonic absorber and VO2 nanobeam to facilitate improvement in both aspects—thermal resolution and spatial resolution. The present invention significantly improves the detectivity, NETD, and responsivity for a smaller form-factor detector active area.

First claim

What is claimed is:

1. An infrared detection device ( 100 ), the device comprising:
a) a radiation absorber ( 120 ) comprising:
i) a support structure ( 110 );
ii) a first metal layer ( 121 ) disposed on the support structure ( 110 );
iii) an insulator layer ( 122 ) disposed on the first metal layer ( 121 ), wherein the first metal layer ( 121 ) is sandwiched between the support structure ( 110 ) and the insulator layer ( 122 ); and
iv) a second metal layer ( 123 ) disposed on the insulator layer, wherein the second metal layer ( 123 ) is patterned; and

b) a high-temperature coefficient of resistance (TCR) nanobeam ( 130 ) embedded within the radiation absorber ( 120 ).

2. The device of claim 1 , wherein the device is configured to detect infrared radiation from objects near ambient temperatures.

3. The device of claim 1 , wherein the device is further configured to detect infrared radiation from objects at a temperature of 300 K to 2800 K.

4. The device of claim 1 , wherein the TCR nanobeam ( 130 ) is a vanadium-dioxide (VO 2 ) nanobeam, or a vanadium-pentoxide (V 2 O 5 ) nanobeam.

5. The device of claim 1 , wherein the radiation absorber ( 120 ) is a plasmonic absorber.

6. The device of claim 1 , wherein the support structure ( 110 ) comprises low-thermal conductivity dielectrics made of silicon or silicon dioxide.

7. The device of claim 1 , wherein the first metal layer ( 121 ) comprises gold, silver, nickel, aluminum, tungsten, titanium, platinum, molybdenum or copper.

8. The device of claim 1 , wherein the second metal layer ( 123 ) comprises gold, silver, nickel, aluminum, tungsten, titanium, platinum, molybdenum or copper.

9. The device of claim 1 , wherein the second metal layer ( 123 ) is patterned into circular or square patches.

10. The device of claim 1 , wherein the insulator layer ( 122 ) is magnesium fluoride.

11. An array for high sensitivity low power detection comprising a plurality of infrared detection devices ( 100 ) according to claim 1 , wherein the devices ( 100 ) are arranged in a configuration such that the nanobeams ( 130 ) connect at least two neighboring devices ( 100 ) together.

12. A method of detecting infrared radiation dose the background, the method comprising:
a) placing one or more infrared detection devices ( 100 ) of claim 1 adjacent to an object;
b) detecting a change in the resistance of the nanobeam ( 130 ) in the infrared detection device ( 100 ); and
c) producing a thermal map of the object based on the change in resistance of the nanobeam ( 130 ).

13. An infrared detection device ( 100 ), the device comprising:
a) a radiation absorber ( 120 ), wherein the radiation absorber comprises:
i) a support structure ( 110 ); and
ii) a plurality of alternating metal and insulator layers disposed on the support structure ( 110 ); and

b) a high-temperature coefficient of resistance (TCR) nanobeam ( 130 ) embedded within the radiation absorber ( 120 ).

14. The device of claim 13 , wherein the device is configured to detect infrared radiation from objects near ambient temperatures.

15. The device of claim 13 , wherein the device is further configured to detect infrared radiation from objects at a temperature of 300 K to 2800 K.

16. The device of claim 13 , wherein the TCR nanobeam ( 130 ) is a vanadium-dioxide (VO 2 ) nanobeam, or a vanadium-pentoxide (V 2 O 5 ) nanobeam.

17. The device of claim 13 , wherein the radiation absorber ( 120 ) is a plasmonic absorber.

18. The device of claim 13 , wherein the support structure ( 110 ) comprises low-thermal conductivity dielectrics made of silicon or silicon dioxide.

19. An array for high power detection comprising a plurality of infrared detection device ( 100 ) of claim 13 , wherein the devices ( 100 ) are arranged in a configuration such that the nanobeams ( 130 ) are connected to at least one neighboring device ( 100 ).

20. A method of detecting infrared radiation dose the background, the method comprising:
a) placing one or more infrared detection devices ( 100 ) of claim 13 adjacent to an object;
b) detecting a change in the resistance of the nanobeam ( 130 ) in the infrared detection device ( 100 ); and
c) producing a thermal map of the object based on the change in resistance of the nanobeam ( 130 ).

Assignees

• Univ California

Inventors

• Khan Mohammad Wahiduzzaman
• Boyraz Ozdal
• Sullivan Jonathan
• Lee Jaeho
• Yu Ziqi

Classifications

• G01J5/48

  Thermography; Techniques using wholly visual means · CPC title

• G01J5/20 Primary

  using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices · CPC title

• G01J5/0815 Primary

  Light concentrators, collectors or condensers · CPC title

• G01J2005/0077

  Imaging · CPC title

• G01J5/0837

  Microantennas, e.g. bow-tie · CPC title