Integrated assemblies and semiconductor memory devices

Patent metadata

Field	Value
Publication number	US-11594536-B2
Application number	US-202117197253-A
Country	US
Kind code	B2
Filing date	Mar 10, 2021
Priority date	Mar 10, 2021
Publication date	Feb 28, 2023
Grant date	Feb 28, 2023

Abstract

Some embodiments include an integrated assembly having a CMOS region with fins extending along a first direction, and with gating structures extending across the fins. A circuit arrangement is associated with the CMOS region and includes a pair of the gating structures spaced by an intervening region having a missing gating structure. The circuit arrangement has a first dimension along the first direction. A second region is proximate to the CMOS region. Conductive structures are associated with the second region. Some of the conductive structures are electrically coupled with the circuit arrangement. A second dimension is a distance across said some of the conductive structures along the first direction. The conductive structures and the circuit arrangement are aligned such that the second dimension is substantially the same as the first dimension. Some embodiments include methods of forming integrated assemblies.

First claim

We claim:

1. An integrated assembly, comprising:
a CMOS region; the CMOS region including fins extending along a first direction, and including gating structures extending across the fins and being on a first pitch;
a circuit arrangement associated with the CMOS region and comprising a pair of the gating structures spaced by an intervening region comprising a missing gating structure; said pair of the gating structures thus being on an extended pitch larger than the first pitch; the circuit arrangement having a first dimension along the first direction;
a second region proximate the CMOS region; and
conductive structures associated with the second region and extending along a second direction substantially orthogonal to the first direction; some of the conductive structures being electrically coupled with the circuit arrangement; the conductive structures being on a second pitch different from the first pitch; a second dimension being a distance across said some of the conductive structures along the first direction; the conductive structures and the circuit arrangement being aligned such that the second dimension is substantially the same as the first dimension.

2. The integrated assembly of claim 1 wherein the intervening region includes only a single insulative material within a location of the missing gating structure.

3. The integrated assembly of claim 1 wherein the intervening region includes two or more vertically-stacked insulative materials within a location of the missing gating structure.

4. The integrated assembly of claim 3 wherein said two or more vertically-stacked insulative materials include a second insulative material vertically sandwiched between upper and lower regions comprising a first insulative material.

5. The integrated assembly of claim 4 wherein the first insulative material comprises silicon dioxide and the second insulative material comprises silicon nitride.

6. The integrated assembly of claim 1 wherein the conductive structures are digit lines.

7. The integrated assembly of claim 6 wherein the circuit arrangement comprises a SENSE AMPLIFIER.

8. The integrated assembly of claim 1 wherein the second region is laterally offset relative to the CMOS region.

9. The integrated assembly of claim 1 wherein the second region is vertically offset relative to the CMOS region.

10. The integrated assembly of claim 1 wherein another of the conductive structures is within said second dimension in addition to said some of the conductive structures that are electrically coupled with the circuit arrangement.

11. An integrated assembly, comprising:
a first memory array region laterally offset from a second memory array region;
a CMOS region laterally between the first and second memory array regions; fins extending along a first direction across the CMOS region; gating structures extending across the fins and being on a first pitch; a SENSE AMPLIFIER circuit associated with the CMOS region and comprising a pair of the gating structures spaced by an intervening region comprising a missing gating structure; said pair of the gating structures thus being on an extended pitch larger than the first pitch; the SENSE AMPLIFIER circuit having a first dimension along the first direction;
first digit lines associated with the first memory array region and extending along a second direction different than the first direction; some of the first digit lines being electrically coupled with the SENSE AMPLIFIER circuit; a second dimension being a distance across said some of the first digit lines along the first direction; the first digit lines and the SENSE AMPLIFIER circuit being aligned such that the second dimension is substantially the same as the first dimension; and
second digit lines associated with the second memory array region; some of the second digit lines being electrically coupled with the SENSE AMPLIFIER circuit; the second dimension being a distance across said some of the second digit lines along the first direction.

12. The integrated assembly of claim 11 wherein the second direction is substantially orthogonal to the first direction.

13. The integrated assembly of claim 11 wherein the second digit lines extend along the second direction.

14. The integrated assembly of claim 11 wherein said some of the first digit lines are comparatively coupled with said some of the second digit lines through the SENSE AMPLIFIER circuit.

15. The integrated assembly of claim 11 wherein the intervening region includes only a single insulative material within a location of the missing gating structure.

16. The integrated assembly of claim 11 wherein the intervening region includes two or more vertically-stacked insulative materials within a location of the missing gating structure.

17. The integrated assembly of claim 11 wherein the first and second memory array regions are vertically offset relative to the CMOS region.

Assignees

• Micron Technology Inc

Inventors

• Yang Yong Mo
• Akhtar Mohd Kamran
• Lee Huyong
• Hwang Sangmin
• Guo Song

Classifications

• H10D84/0165

  the components including complementary IGFETs, e.g. CMOS devices · CPC title

• H10D84/038

  using silicon technology, e.g. SiGe · CPC title

• H10D89/10

  Integrated device layouts · CPC title

• H10D84/0188

  Manufacturing their isolation regions · CPC title

• H10D84/0193

  the components including FinFETs · CPC title