Processes for shaping nanomaterials
US-2017256406-A1 · Sep 7, 2017 · US
US11591716B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11591716-B2 |
| Application number | US-201816757306-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 22, 2018 |
| Priority date | Oct 20, 2017 |
| Publication date | Feb 28, 2023 |
| Grant date | Feb 28, 2023 |
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An ultra-hard carbon film is formed by the uniaxial compression of thin films of graphene. The graphene films are two or three layers thick (2-L or 3-L). High pressure compression forms a diamond-like film and provides improved properties to the coated substrates.
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What is claimed is: 1. A composition of matter comprising: a silicon carbide substrate having a surface; and an ultra-hard diamond-like carbon film, formed from compressed graphene, disposed on the surface, wherein the ultra-hard diamond-like carbon film is between 4 Å and 10 Å thick and has a hardness greater than 100 GPa. 2. The composition of matter as recited in claim 1 , wherein the ultra-hard diamond-like carbon film is between 4 Å and 7 Å thick. 3. The composition of matter as recited in claim 1 , wherein the ultra-hard diamond-like carbon film is between 4 Å and 6 Å thick. 4. The composition of matter as recited in claim 1 , wherein the ultra-hard diamond-like carbon film is optically transparent. 5. The composition of matter as recited in claim 1 , wherein the composition of matter coats a protective armor. 6. The composition of matter as recited in claim 5 , wherein the protective armor is a protective vest. 7. The composition of matter as recited in claim 5 , wherein the protective armor is a protective helmet. 8. The composition of matter as recited in claim 1 , wherein the compressed graphene was formed by uniaxially compressing a graphene film to the surface of the silicon carbide with a pressure between 1 GPa and 10 GPa, wherein the graphene film had a thickness between 4 Å and 10 Å. 9. The composition of matter as recited in claim 8 , wherein the graphene film consists of two layers (2-L) of graphene. 10. The composition of matter as recited in claim 9 , wherein the two-layers (2-L) of graphene consist of a buffer layer of graphene that is contiguous with a monolayer of graphene, wherein the buffer layer of graphene is contiguous with the surface of the silicon carbide. 11. The composition of matter as recited in claim 9 , wherein the ultra-hard diamond-like carbon film has a Young's modulus greater than 0.3 TPa. 12. The composition of matter as recited in claim 9 , wherein the ultra-hard diamond-like carbon film has a Young's modulus greater than 1 TPa. 13. A method for producing an ultra-hard diamond-like carbon film, the method comprising: uniaxially compressing a graphene film to a surface of silicon carbide with a pressure between 1 GPa and 10 GPa, wherein the graphene film has a thickness between 4 Å and 10 Å and consists of two layers (2-L) or three layers (3-L) of graphene, thereby forming the ultra-hard diamond-like carbon film with a thickness between 4 Å and 10 Å and a hardness greater than 100 GPa. 14. The method as recited in claim 13 , wherein the graphene film consists of two layers (2-L) of graphene. 15. The method as recited in claim 13 , wherein the ultra-hard diamond-like carbon film is optically transparent. 16. The method as recited in claim 13 , wherein the compressing applies a force between 30 nanonewtons and 900 nanonewtons. 17. The method as recited in claim 13 , wherein the graphene film has a thickness between 4 Å and 6 Å. 18. The method as recited in claim 13 , wherein the uniaxially compressing transforms the graphene film to the ultra-hard diamond-like carbon film such that the ultra-hard diamond-like carbon film, relative to the graphene film, increases in hardness by at least 75 GPa to produce the hardness greater than 100 GPa.
After-treatment · CPC title
characterised by the substrate · CPC title
using layered materials · CPC title
obtained by SEM · CPC title
After-treatment of single crystals or homogeneous polycrystalline material with defined structure (C30B31/00 takes precedence) · CPC title
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