Method for manufacturing polycrystalline silicon fragment and polycrystalline silicon block fracture device

US11590509B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11590509-B2
Application numberUS-201916385816-A
CountryUS
Kind codeB2
Filing dateApr 16, 2019
Priority dateOct 14, 2014
Publication dateFeb 28, 2023
Grant dateFeb 28, 2023

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A polycrystalline silicon block fracture device includes a fracturing part mechanically fracturing a polycrystalline silicon block material to produce a polycrystalline silicon fragment including a polycrystalline silicon powder having a particle size of 500 to 1000 μm then discharging from a discharging port; a falling movement part continuous with a downstream of the fracturing part allowing said polycrystalline silicon fragment discharged from the discharging port to fall by gravity; a receiver part positioned at downstream of the falling movement part and receives the polycrystalline silicon fragment after falling through the falling movement part; and the falling movement part includes a suction removing part in which at least part of the polycrystalline silicon powder included in the polycrystalline silicon fragment is removed by suctioning to a different direction from falling direction; the suction removing part suctions at a suction rate of 1 to 20 m3/min.

First claim

Opening claim text (preview).

The invention claimed is: 1. A polycrystalline silicon block fracture device, comprising: a fracturing part mechanically fracturing a polycrystalline silicon block material introduced from a material introduction port by a movement of an outside force loading member to produce a polycrystalline silicon fragment including a polycrystalline silicon powder having a particle size of 500 to 1000 μm then discharging from a discharging port, a falling movement part continuous with a downstream of said fracturing part allowing said polycrystalline silicon fragment discharged from the discharging port to fall by gravity, a receiver part positioned at downstream of said falling movement part and receives said polycrystalline silicon fragment after falling through said falling movement part, a sliding dust suction part suctioning a sliding dust generated by a sliding part which slides together with the movement of said outside force loading member; and said falling movement part comprises a suction removing part in which at least part of said polycrystalline silicon powder included in said polycrystalline silicon fragment is removed by suctioning to a different direction from said falling direction, wherein an amount of said polycrystalline silicon fragment is supplied to said falling movement part at 20 to 160 g/min per unit area, cm 2 , of said falling movement part, and said suction removing part suctions at a suction rate of 1 to 20 m 3 /min. 2. The polycrystalline silicon block fracture device as set forth in claim 1 , wherein said outside force loading member comprises a movable teeth, and a stationary teeth, said fracturing part fractures said polycrystalline silicon block material introduced from said material introduction port at an upstream by placing between said movable teeth and said stationary teeth, and discharges from said discharging port at the downstream. 3. A production method of a polycrystalline silicon fragment, comprising: providing the polycrystalline block fracture device as set forth in claim 1 ; and blowing air to said polycrystalline silicon fragment received by said receiver part.

Assignees

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Classifications

  • Jaw crushers or pulverisers · CPC title

  • Compositional purity · CPC title

  • with separator arranged in discharge path of crushing or disintegrating zone · CPC title

  • the applied gas acting to effect material separation (B02C23/34 takes precedence) · CPC title

  • C01B33/02Primary

    Silicon (forming single crystals or homogeneous polycrystalline material with defined structure C30B) · CPC title

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What does patent US11590509B2 cover?
A polycrystalline silicon block fracture device includes a fracturing part mechanically fracturing a polycrystalline silicon block material to produce a polycrystalline silicon fragment including a polycrystalline silicon powder having a particle size of 500 to 1000 μm then discharging from a discharging port; a falling movement part continuous with a downstream of the fracturing part allowing …
Who is the assignee on this patent?
Tokuyama Corp
What technology area does this patent fall under?
Primary CPC classification C01B33/02. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Feb 28 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).