Radiation-emitting optoelectronic component

Patent metadata

Field	Value
Publication number	US-11588076-B2
Application number	US-201816606226-A
Country	US
Kind code	B2
Filing date	Apr 17, 2018
Priority date	Apr 18, 2017
Publication date	Feb 21, 2023
Grant date	Feb 21, 2023

Abstract

A radiation-emitting optoelectronic component may include a semiconductor chip or a semiconductor laser which, in operation of the component, emits a primary radiation in the UV region or in the blue region of the electromagnetic spectrum. The optoelectronic component may further include a conversion element comprising a first phosphor configured to convert the primary radiation at least partly to a first secondary radiation having a peak wavelength in the green region of the electromagnetic spectrum between 475 nm and 500 nm inclusive. The first phosphor may be or include BaSi 4 Al 3 N 9 , SrSiAl 2 O 3 N 2 , BaSi 2 N 2 O 2 , ALi 3 XO 4 , M* (1−x*−y*−z*) Z* z* [A* a* B* b* C* c* D* d* E* e* N 4-n* O n* ], and combinations thereof.

First claim

The invention claimed is:

1. A radiation-emitting optoelectronic component comprising:
a semiconductor chip or a semiconductor laser which, in operation of the component, emits a primary radiation in the UV region or in the blue region of the electromagnetic spectrum, and a conversion element comprising:
a first phosphor configured to convert the primary radiation at least partly to a first secondary radiation having a peak wavelength in the electromagnetic spectrum ranging from 475 nm to 500 nm inclusive; and wherein the first phosphor is selected from a group comprising BaSi 4 Al 3 N 9 , SrSiAl 2 O 3 N 2 , ALi 3 XO 4 or where the first phosphor comprises a combination of at least two of the following phosphors: BaSi 4 Al 3 N 9 , SrSiAl 2 O 3 N 2 , BaSi 2 N 2 O 2 , ALi 3 XO 4 and M* (1−x*−y*−z*) Z* z* [A* a* B* b* C* c* D* d* E *e *N 4-n* O n* ],
wherein A is at least one element selected from the group consisting of Li, Na, K, Rb, Cs, and combinations thereof;
wherein X is at least one element selected from the group consisting of Si, Ge, Ti, Zr, Hf and combinations thereof;
wherein M* is selected from the group including Ca, Sr, Ba and combinations thereof;
wherein Z* is selected from the group including Na, K, Rb, Cs, Ag and combinations thereof;
wherein A* is selected from the group including Mg, Mn, Zn and combinations thereof;
wherein B* is selected from the group including B, Al, Ga and combinations thereof;
wherein C* is selected from the group including Si, Ge, Ti, Zr, Hf and combinations thereof;
wherein D* is selected from the group including Li, Cu and combinations thereof;
wherein E* is selected from the group including P, V, Nb, Ta and combinations thereof;
and wherein:
0≤ x*≤ 0.2;

0≤ y*≤ 0.2;

0≤ x*+y*≤ 0.4;

0≤ z*< 1;

0≤ n*≤ 4;

0≤ a*≤ 4;

0≤ b*≤ 4;

0≤ c*≤ 4;

0≤ d*≤ 4;

0≤ e*≤ 4;

a*+b*+c*+d*+e*= 4;
2 a*+ 3 b*+ 4 c*+d*+ 5 e*= 10− y*−n*+z*;

wherein BaSi 4 Al 3 N 9 , SrSiAL 2 O 3 N 2 , BaSi 2 N 2 O 2 , ALi 3 XO 4 and
M* (1−x*−y*−z*) Z* z* [A* a* B* b* C* c* D* d* E* e* N 4-n* O n* ] may each independently be doped with a rare earth element; and

a second phosphor configured to convert the primary radiation at least partly to a second secondary radiation having a peak wavelength in the red region of the electromagnetic spectrum from 600 nm to 700 nm inclusive and wherein the second phosphor is selected from a group comprising:
(MgO) 4-s (MgF 2 ) s GeO 2 :Mn 4+ where 0≤s≤4,
A′ 2 Ge 4 O 9 :Mn 4+ or A′ 3 A″Ge 8 O 18 :Mn 4+ , where A and A′=Li, Na, K and/or Rb M′ 1−y′−z Z z G g (BE) b (CE) c (DE) d E e N 4-n O n :(RE) y′ where M′=Ca, Sr and/or Ba; Z=Na, K and/or Rb; G=Mg, Mn and/or Zn; BE=B, Al and/or Ga; CE=Si, Ge, Ti and/or Hf; DE=Li and/or Cu; E=P, V, Nb and/or Ta; RE=Eu and/or Yb; with 0≤y′≤0.2; 0≤z<1; 0≤n≤0.5; 0≤g≤4; 0≤b≤4; 0≤c≤4; 0≤d≤4; 0≤e≤4; g+b+c+d+e=4; and 2g+3b+4c+d+5e=10−y′−n+z, and
combinations thereof.

2. The radiation-emitting optoelectronic component as claimed in claim 1 ,
wherein the primary radiation is converted fully to the first secondary radiation and the component emits total radiation having a peak wavelength in the electromagnetic spectrum ranging from 475 nm to 500 nm inclusive.

3. The radiation-emitting optoelectronic component as claimed in claim 2 ,
wherein the color point of the total radiation is within a color region defined in the CIE color diagram (1931) by the vertices Cx/Cy=0.1/0.1; 0.2/0.1; 0.225/0.24; 0.35/0.4 and 0.00817/0.547.

4. The radiation-emitting optoelectronic component as claimed in claim 1 ,
wherein the conversion element comprises a second phosphor configured to convert the primary radiation at least partly to a second secondary radiation having a peak wavelength in the red region of the electromagnetic spectrum from 600 nm to 700 nm inclusive; and wherein the second phosphor is selected from a group comprising (Ca,Sr)AlSiN 3 :Eu 2+ , (Ca,Sr)AlSiN 3 :Yb 2+ ; (Sr,Ca) 3 Al 2 O 3 :Eu 2+ ; (Sr, Ca,Ba) 2 Si 5 N 8 :Eu 2+ ; SrSiN 2 :Eu 2+ ; SrAlSi 4 N 7 :Eu 2+ ; CasSi 2 Al 2 N 8 :Eu 2+ ; CaS:Eu 2+ ; Sr[LiAl 3 N 4 ]:Eu 2+ ; Sr[LiAl 3 N 4 ]:Yb 2+ ; K 2 Ge 4 O 9 :Mn 4+ ; Rb 2 Ge 4 O 9 :Mn 4+ ; Li 3 RbGe 8 O 18 :Mn 4+ ; Sr 4 Al 14 O 25 :Mn 4+ ; Mg 2 TiO 4 :Mn 4+ ; CaZrO 3 :Mn 4+ ; Gd 3 Ga 5 O 12 :Mn 4+ ; Al 2 O 3 :Mn 4+ ; GdAlO 3 :Mn 4+ ; LaAlO 3 :Mn 4+ ; LiAl 5 O 8 :Mn 4+ ; SrTiO 3 :Mn 4+ ; Y 2 Ti 2 O 7 :Mn 4+ ; Y 2 Sn 2 O 7 :M n+ ; CaAl 12 O 19 :Mn 4+ ; MgO:Mn 4+ ; Ba 2 LaNbO 6 :Mn 4+ ; K 2 SiF 6 :Mn 4+ ; Na 2 SiF 6 :Mn 4+ ; K 2 TiF 6 :Mn 4+ ; Mg 4 GeO 5.5 F:Mn 4+ , and combinations thereof.

5. The radiation-emitting optoelectronic component as claimed in claim 1 , wherein the first phosphor has the formula BaSi 4 Al 3 N 9 :Eu 2+ and the second phosphor has the formula Mg 4 GeO 5.5 F:Mn 4+ , the first phosphor has the formula BaSi 4 Al 3 N 9 :Eu 2+ and the second phosphor has the formula K 2 SiF 6 :Mn 4+ , the first phosphor has the formula ALi 3 XO 4 :Eu 2+ and the second phosphor has the formula K 2 SiF 6 :Mn 4+ , or the first phosphor has the formula SrSiAl 2 O 3 N 2 :Eu 2+ and the second phosphor has the formula K 2 SiF 6 :Mn 4+ .

6. The radiation-emitting optoelectronic component as claimed in claim 1 ,
wherein the primary radiation is converted partly to the first and second secondary radiations and the component emits a white total radiation and the spectrum of the total radiation has at least three and at most five intensity maxima in the range from 400 nm to 800 nm inclusive.

7. The radiation-emitting optoelectronic component as claimed in claim 6 ,
wherein at least one intensity maximum in each case is in the range from 400 nm to 475 nm inclusive, in the range from 475 nm to 500 nm inclusive and in the range from 600 nm to 700 nm inclusive.

8. The radiation-emitting optoelectronic component as claimed in claim 6 ,
wherein there is no intensity maximum in the range from 500 nm to 600 nm.

9. The radiation-emitting optoelectronic component as claimed in claim 6 ,
wherein the color point of the white total radiation is in a color region which, in the CIE color diagram (1931), lies on the line of the blackbody radiator or with a deviation of up to ±0.02 CX and/or ±0.02 C y from the line of the blackbody radiator.

10. The radiation-emitting optoelectronic component as claimed in claim 6 ,
wherein the color temperature of the white total radiation is from 30 000 K to 2700 K inclusive.

11. A radiation-emitting optoelectronic component comprising:
a semiconductor chip or a semiconductor laser which, in operation of the component, emits a primary radiation in the UV region or in the blue region of the electromagnetic spectrum; and
a further semiconductor chip or a further semiconductor laser which, in operation of the component, emits a primary radiation having a peak wavelength in the electromagnetic spectrum from 475 nm to 500 nm inclusive, and
a conversion element comprising a second phosphor configured to convert the primary radiation at least partly to a second secondary radiation having a peak wavelength in the red region of the electromagnetic spectrum from 600 nm to 700 nm inclusive, and wherein the second phosphor is selected from a group comprising:
A′ 2 Ge 4 O 9 :Mn 4+ or A′ 3 A″Ge 8 O 18 :Mn 4+ , where A and A′=Li, Na, K and/or Rb;
M′ 1−y′−z Z z G g (BE) b (CE) c (DE) d E e N 4-n O n :(RE) y′ , where M′=Ca, Sr and/or Ba; Z=Na, K and/or Rb; G=Mg, Mn and/or Zn; BE=B, Al and/or Ga; CE=Si, Ge, Ti and/or Hf; DE=Li and/or Cu; E=P, V, Nb and/or Ta; RE=Eu and/or Yb; with 0≤y′≤0.2; 0≤z<1; 0≤n≤0.5; 0≤g≤4; 0≤b≤4; 0≤c≤4; 0≤d≤4; 0≤e≤4; g+b+c+d+e=4; and 2g+3b+4c+d+5e=10−y′−n+z; and
combinations thereof.

12. The compon

Assignees

• Osram Opto Semiconductors Gmbh

Inventors

• Stoll Ion
• Baumgartner Alexander
• Wilm Alexander

Classifications

• H10H20/825

  containing nitrogen, e.g. GaN · CPC title

• H10H20/823

  comprising only Group II-VI materials, e.g. ZnO · CPC title

• H10H20/8513

  having two or more wavelength conversion materials · CPC title

• H10H20/8512 Primary

  Wavelength conversion materials · CPC title

• C09K11/77346

  Aluminium Nitrides or Aluminium Oxynitrides · CPC title