Solid state conversion of polycrystalline material

Patent metadata

Field	Value
Publication number	US-11584656-B2
Application number	US-202117221913-A
Country	US
Kind code	B2
Filing date	Apr 5, 2021
Priority date	Apr 8, 2020
Publication date	Feb 21, 2023
Grant date	Feb 21, 2023

Abstract

Systems, devices, and techniques for manufacturing a crystalline material (e.g., large crystal material) through the solid state conversion of a polycrystalline material are described. A device may be configured to concurrently heat a volume of ribbon, such as an alumina ribbon, using multiple heat sources. For example, a first heat source may heat a first volume of the ribbon and a second heat source may concurrently heat a second volume, for example, within the first volume, where the ribbon may comprise polycrystalline material. The concurrent heating may drive grain growth in the polycrystalline material in at least the second volume, which may convert the polycrystalline material to crystalline material having one or more grains that are larger than one or more grains of the polycrystalline material. The processed ribbon may include a large crystal material or a single crystal material.

First claim

What is claimed is:

1. A ribbon, comprising:
a first volume extending from a first side of the ribbon to a first depth of the ribbon and comprising a polycrystalline material; and
a second volume extending from a second side of the ribbon opposite the first side of the ribbon to a second depth of the ribbon and comprising a crystalline material having a grain size of at least 100 micrometers and comprising one or more grains that are larger than a plurality of grains of the polycrystalline material, wherein the second depth is at least 1 micrometer,
wherein the ribbon is not a tube.

2. The ribbon of claim 1 , wherein the polycrystalline material comprises a polycrystalline ceramic material, or polycrystalline metal material, or a semiconductor material, and wherein the crystalline material comprises a sapphire material or a single crystal material.

3. The ribbon of claim 1 , wherein a lateral dimension of the grain size of the crystalline material is at least 1 millimeter and a longitudinal dimension of the grain size is at least 1 millimeter.

4. The ribbon of claim 1 , wherein the second depth of the second volume extends to about a thickness of the ribbon, the thickness of the ribbon being up to 1000 micrometers.

5. The ribbon of claim 1 , wherein the one or more grains of the crystalline material are oriented in a first direction, and wherein a basal plane of the crystalline material is aligned with a plane of the ribbon based at least in part on the one or more grains of the crystalline material being oriented in the first direction.

Assignees

• Corning Inc

Inventors

• Ketcham Thomas Dale
• Li Xinghua
• Wang Yan

Classifications

• H10P72/0431

  Apparatus for thermal treatment · CPC title

• H10P14/3802

  Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth · CPC title

• C30B33/02 Primary

  Heat treatment (C30B33/04, C30B33/06 take precedence) · CPC title

• C01P2004/10

  extending in one dimension, e.g. needle-like · CPC title

• C30B29/20

  Aluminium oxides · CPC title