Light-emitting diode and method for preparing the same

Patent metadata

Field	Value
Publication number	US-11581503-B2
Application number	US-202117212020-A
Country	US
Kind code	B2
Filing date	Mar 25, 2021
Priority date	Aug 1, 2018
Publication date	Feb 14, 2023
Grant date	Feb 14, 2023

Abstract

Provided is a light-emitting diode and a method for preparing the same. The light-emitting diode includes an anode, a hole transport layer, a perovskite light-emitting layer, an electron transport layer and a cathode stacked in sequence, in which the perovskite light-emitting layer includes a first sublayer and a second sublayer stacked in sequence, with a material for forming the first sublayer including an inorganic perovskite material, and with a material for forming the second sublayer being an organic perovskite material.

First claim

What is claimed is:

1. A method for preparing a light-emitting diode, comprising steps of:
forming a hole transport layer on a side of an anode;
forming a perovskite light-emitting layer on a side of the hole transport layer away from the anode;
forming an electron transport layer on a side of the perovskite light-emitting layer away from the anode; and
forming a cathode on a side of the electron transport layer away from the anode,
wherein the step of forming the perovskite light-emitting layer comprises:
forming a first sublayer on a side of the hole transport layer away from the anode, with a raw material for forming the first sublayer comprising an inorganic perovskite material; and
forming a second sublayer on a side of the first sublayer away from the anode, with a raw material for forming the second sublayer being an organic perovskite material,
wherein the step of forming the perovskite light-emitting layer further comprises annealing the first sublayer at 70 to 200° C. after the step of forming the first sublayer.

2. The method of claim 1 , wherein the first sublayer is formed by a solution process and the second sublayer is formed by a vacuum evaporation process.

3. The method of claim 2 , wherein a raw material for forming the first sublayer by the solution process further comprises a passivation material and a solvent, with the solvent comprising at least one selected from dimethyl sulfoxide and dimethylformamide.

4. The method of claim 3 , wherein the weight ratio of the inorganic perovskite material to the passivation material is from 19:1 to 4:1.

5. The method of claim 1 , wherein the method further comprises:
forming a hole injection layer on the side of the anode before forming the hole transport layer.

6. The method of claim 1 , wherein the method further comprises:
forming an exciton-blocking layer on the side of the perovskite light-emitting layer before forming the electron transport layer.

7. A method for preparing a light-emitting diode, comprising steps of:
forming a hole transport layer on a side of an anode;
forming a perovskite light-emitting layer on a side of the hole transport layer away from the anode;
forming an electron transport layer on a side of the perovskite light-emitting layer away from the anode; and
forming a cathode on a side of the electron transport layer away from the anode,
wherein the step of forming the perovskite light-emitting layer comprises:
forming a first sublayer on a side of the hole transport layer away from the anode, with a raw material for forming the first sublayer comprising an inorganic perovskite material; and
forming a second sublayer on a side of the first sublayer away from the anode, with a raw material for forming the second sublayer being an organic perovskite material material,
wherein the first sublayer is formed by a solution process and the second sublayer is formed by a vacuum evaporation process.

8. The method of claim 7 , wherein a raw material for forming the first sublayer by the solution process further comprises a passivation material and a solvent, with the solvent comprising at least one selected from dimethyl sulfoxide and dimethylformamide.

9. The method of claim 8 , wherein the weight ratio of the inorganic perovskite material to the passivation material is from 19:1 to 4:1.

10. The method of claim 7 , wherein the method further comprises:
forming a hole injection layer on the side of the anode before forming the hole transport layer.

11. The method of claim 7 , wherein the method further comprises:
forming an exciton-blocking layer on the side of the perovskite light-emitting layer before forming the electron transport layer.

Assignees

• Beijing Boe Display Tech Co
• Boe Technology Group Co Ltd

Inventors

• Xu Ruipeng
• Wang Lifu
• Wang Yanping
• Zhou Peng

Classifications

• H10K85/50

  Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3 · CPC title

• H10K71/40

  Thermal treatment, e.g. annealing in the presence of a solvent vapour · CPC title

• H10K71/441

  in the presence of solvent vapors, e.g. solvent vapour annealing · CPC title

• H10K50/135

  comprising mobile ions · CPC title

• H10K50/13 Primary

  comprising stacked EL layers within one EL unit · CPC title