Wafer cleaning apparatus, method for cleaning wafer and method for fabricating semiconductor device

Patent metadata

Field	Value
Publication number	US-11581182-B2
Application number	US-202117478619-A
Country	US
Kind code	B2
Filing date	Sep 17, 2021
Priority date	Feb 16, 2021
Publication date	Feb 14, 2023
Grant date	Feb 14, 2023

Abstract

A wafer cleaning apparatus, a method of cleaning wafer and a method of fabricating a semiconductor device are provided. The method of fabricating the semiconductor device includes disposing a wafer on a rotatable chuck, irradiating a lower surface of the wafer with a laser to heat the wafer, and supplying a chemical to an upper surface of the wafer to clean the wafer, wherein the laser penetrates an optical system including an aspheric lens array, the laser penetrates a calibration window, which includes a first window structure including a first light projection window including first and second regions different from each other, a first coating layer covering the first region of the first light projection window, and a second coating layer covering the second region of the first light projection window, and the first coating layer and the second coating layer have different light transmissivities from each other.

First claim

What is claimed is:

1. A wafer cleaning apparatus comprising:
a chuck configured that a wafer is disposed on the chuck;
a chemical supply unit configured to supply a chemical onto an upper surface of the wafer;
a laser module configured to irradiate a lower surface of the wafer with a laser; and
a calibration window configured that the laser is transmitted through the calibration window between the wafer and the laser module,
wherein the calibration window includes a light projection window including a lower surface facing the laser module, a first coating layer having a first light transmissivity on the lower surface of the light projection window, and a second coating layer having a second light transmissivity greater than the first light transmissivity on the lower surface of the light projection window,
wherein the first coating layer and the second coating layer are disposed on the same surface, and
wherein the chuck, the laser module, and the calibration window are configured such that the laser is transmitted through the first coating layer to have a lower intensity at the chuck as compared to an intensity of the laser at the chuck that is transmitted through the second coating laver.

2. The wafer cleaning apparatus of claim 1 , wherein the first coating layer includes first and second sub-coating layers alternately stacked on the lower surface of the light projection window, and
a refractive index of the first sub-coating layer is smaller than a refractive index of the second sub-coating layer.

3. The wafer cleaning apparatus of claim 2 , wherein the first sub-coating layer includes a silicon oxide, and the second sub-coating layer includes a hafnium oxide.

4. The wafer cleaning apparatus of claim 1 , wherein the second coating layer includes first to third sub-coating layers which are sequentially stacked on the lower surface of the light projection window, and
refractive indexes of the first to third sub-coating layers decreases in a direction receding from the lower surface of the light projection window.

5. The wafer cleaning apparatus of claim 1 , wherein the light projection window includes at least one of borosilicate glass and fused silica glass.

6. The wafer cleaning apparatus of claim 1 , further comprising:
an optical system including an aspherical lens array through which the laser is transmitted, the optical system disposed between the laser module and the calibration window.

7. A wafer cleaning apparatus comprising:
a rotatable chuck configured to receive a wafer;
a chemical supply unit configured to supply a chemical onto an upper surface of the wafer;
a laser module configured to irradiate a lower surface of the wafer with a laser;
an optical system including an aspherical lens array configured that the laser is transmitted through the optical system between the laser module and the wafer; and
a calibration window configured that the laser is transmitted through the calibration window between the optical system and the wafer,
wherein the calibration window includes a light projection window including a first region and a second region different from each other, a first coating layer covering the first region of the light projection window, and a second coating layer covering the second region of the light projection window,
wherein the first coating layer and the second coating layer include different light transmissivities from each other,
wherein the first coating layer and the second coating layer are disposed on the same surface, and
wherein the chuck, the laser module, and the calibration window are configured such that the laser is transmitted through the first coating layer to have a lower intensity at the chuck as compared to an intensity of the laser at the chuck that is transmitted through the second coating layer.

8. The wafer cleaning apparatus of claim 7 , further comprising:
a hemispherical reflector which re-reflects the laser reflected from the lower surface of the wafer.

9. The wafer cleaning apparatus of claim 8 , wherein the calibration window vertically overlaps the whole area of the reflector.

10. The wafer cleaning apparatus of claim 8 , further comprising:
a transparent window which includes a quartz material between the reflector and the wafer.

11. The wafer cleaning apparatus of claim 10 , wherein the transparent window is interposed between the calibration window and the wafer.

12. A wafer cleaning apparatus comprising:
a chuck configured that a wafer is disposed on the chuck;
a chemical supply unit configured to supply a chemical onto an upper surface of the wafer;
a laser module configured to irradiate a lower surface of the wafer with a laser;
a light projection window facing the laser module;
a first coating layer formed on a surface of the light projection window, the first coating layer having a first light transmissivity; and
a second coating layer formed on the surface of the light projection window, the second coating layer having a second light transmissivity greater than the first light transmissivity,
wherein the first coating layer surrounds the second coating layer.

13. The wafer cleaning apparatus of claim 12 , wherein the surface of the light projection window is a lower surface of the light projection window, and the lower surface of the light projection window faces the laser module.

14. The wafer cleaning apparatus of claim 12 , wherein the surface of the light projection window is an upper surface of the light projection window, and the upper surface of the light projection window faces the chuck.

15. The wafer cleaning apparatus of claim 12 , wherein the first coating layer has an annular shape and the second coating layer has a solid disk shape.

16. The wafer cleaning apparatus of claim 12 , wherein the first coating layer is directly adjacent to the second coating layer.

17. The wafer cleaning apparatus of claim 1 , wherein the first coating layer and the second coating layer cover the whole area of the lower surface of the light projection window.

18. The wafer cleaning apparatus of claim 7 , wherein the first coating layer and the second coating layer cover the whole area of the lower surface of the light projection window.

Assignees

• Samsung Electronics Co Ltd

Inventors

• CHO Seongkeun
• Kim Young Hoo
• Shin Seung Min
• Earmme Tae Min
• Lee Kun Tack
• Jang Hun Jae
• Jeang Eun Hee

Classifications

• H10P72/7618

  characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel · CPC title

• H10P34/42

  with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) · CPC title

• H10P70/20 Primary

  Cleaning during device manufacture · CPC title

• H10P72/0436

  mainly by radiation · CPC title

• H10P72/0414

  using mainly spraying means, e.g. nozzles · CPC title