Semiconductor device

Patent metadata

Field	Value
Publication number	US-11575040-B2
Application number	US-202117161931-A
Country	US
Kind code	B2
Filing date	Jan 29, 2021
Priority date	Mar 4, 2020
Publication date	Feb 7, 2023
Grant date	Feb 7, 2023

Abstract

A semiconductor device includes a first MOS structure portion that includes, as its elements, a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a first second-semiconductor-layer of a second conductivity type, first semiconductor regions of the first conductivity type, and first gate insulating films, and a second MOS structure portion that includes, as its elements, the substrate, the first semiconductor layer, a second second-semiconductor-layer, second first-semiconductor-regions of the first conductivity type, and second gate insulating films. First and second portions include all of the elements of the first and second MOS structure portions other than the first and second first-semiconductor-regions and the first and second gate insulating films, respectively. A structure of one of the elements of the first portion is not identical to a structure of a corresponding element of the second portion.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a first MOS structure portion having the following elements:
a semiconductor substrate of a first conductivity type, having a front surface and a back surface opposite to each other;
a first semiconductor layer of the first conductivity type, provided on the front surface of the semiconductor substrate and having an impurity concentration that is lower than an impurity concentration of the semiconductor substrate, the first semiconductor layer having a first surface and a second surface opposite to each other, the second surface facing the semiconductor substrate;
a first second-semiconductor-layer of a second conductivity type, provided on the first surface of the first semiconductor layer, the first second-semiconductor-layer having a first surface and a second surface opposite to each other, the second surface facing the semiconductor substrate;
a plurality of first first-semiconductor-regions of the first conductivity type, selectively provided in the first second-semiconductor-layer, at the first surface thereof, each of the plurality of first first-semiconductor-regions having a first surface and a second surface opposite to each other, the second surface facing the semiconductor substrate;
a plurality of first trenches that penetrate respective ones of the plurality of first first-semiconductor-regions and penetrate the first second-semiconductor-layer, and reach the first semiconductor layer;
a plurality of first gate insulating films provided in respective ones of the plurality of first trenches, and being in contact with the first second-semiconductor-layer;
a plurality of first gate electrodes provided on respective ones of the plurality of first gate insulating films in the respective ones of the plurality of first trenches;
a plurality of first first-electrodes provided on the first surface of the first second-semiconductor-layer and respective ones of the first surfaces of the plurality of first first-semiconductor-regions; and
a second electrode provided on the back surface of the semiconductor substrate;

a second MOS structure portion that detects overcurrent flowing in the first MOS structure portion, the second MOS structure portion including the following elements:
the semiconductor substrate;
the first semiconductor layer;
a second second-semiconductor-layer of the second conductivity type, provided on the first surface of the first semiconductor layer;
a plurality of second first-semiconductor-regions of the first conductivity type, selectively provided in the second second-semiconductor-layer, at the first surface thereof, each of the plurality of second first-semiconductor-regions having a first surface and a second surface opposite to each other, the second surface facing the semiconductor substrate;
a plurality of second trenches that penetrate respective ones of the plurality of second first-semiconductor-regions and penetrate the second second-semiconductor-layer, and reach the first semiconductor layer;
a plurality of second gate insulating films provided in respective ones of the plurality of second trenches, and being in contact with the second second-semiconductor-layer;
a plurality of second gate electrodes provided on respective ones of the plurality of second gate insulating films in the respective ones of the plurality of second trenches;
a plurality of second first-electrodes provided on the first surface of the second second-semiconductor-layer and respective ones of the first surfaces of the plurality of second first-semiconductor-regions; and
the second electrode,

wherein
a bottom of each of the plurality of first trenches has a radius of curvature that differs from a radius of curvature of a bottom of each of the plurality of second trenches.

2. The semiconductor device according to claim 1 , further comprising:
a first portion that includes all of the elements of the first MOS structure portion other than the plurality of first first-semiconductor-regions and the plurality of first gate insulating films, the first portion being located below the first surfaces of the plurality of first first-semiconductor-regions; and
a second portion that includes all of the elements of the second MOS structure portion other than the plurality of second first-semiconductor-regions and the plurality of second gate insulating films, the second portion being located below the first surfaces of the plurality of second first-semiconductor-regions, wherein
the first MOS structure portion and the second MOS structure portion each have a plurality of MOS characteristics, and
among the elements of the first MOS structure portion and the second MOS structure portion, a structure of at least one element of the first portion that includes any one of a thickness or width thereof is not identical to a structure of at least one functionally corresponding element of the second portion so that the first MOS structure portion has a characteristic value obtained from one of the plurality of MOS characteristics that differs by at least 10% from a characteristic value of a corresponding MOS characteristic of the second MOS structure portion.

3. The semiconductor device according to claim 1 , further comprising:
a first portion that includes all of the elements of the first MOS structure portion other than the plurality of first first-semiconductor-regions and the plurality of first gate insulating films, the first portion being located below the first surfaces of the plurality of first first-semiconductor-regions; and
a second portion that includes all of the elements of the second MOS structure portion other than the plurality of second first-semiconductor-regions and the plurality of second gate insulating films, the second portion being located below the first surfaces of the plurality of second first-semiconductor-regions, wherein
among the elements of the first MOS structure portion and the second MOS structure portion, a structure of at least one element of the first portion that includes any one of a thickness or width thereof is not identical to a structure of at least one functionally corresponding element of the second portion so that a first rate of change of a drain-source current with respect to a drain-source voltage of the second MOS structure portion is at least 10% higher than a second rate of change of the drain-source current with respect to a drain-source voltage of the first MOS structure portion.

4. The semiconductor device according to claim 1 , further comprising:
a first portion that includes all of the elements of the first MOS structure portion other than the plurality of first first-semiconductor-regions and the plurality of first gate insulating films, the first portion being located below the first surfaces of the plurality of first first-semiconductor-regions; and
a second portion that includes all of the elements of the second MOS structure portion other than the plurality of second first-semiconductor-regions and the plurality of second gate insulating films, the second portion being located below the first surfaces of the plurality of second first-semiconductor-regions, wherein
among the elements of the first MOS structure portion and the second MOS structure portion, at least one element of the first portion has a level or a material different from a level or a material of at least one functionally corresponding element of the second portion, a level of an element being defined by a total number of the elements that are disposed between the semiconductor substrate and said element.

5. The semiconductor device according to claim 1 , further comprising:
a first portion that includes all of the elements of the first MOS structure portion other than the plurality of first first-semiconducto

Assignees

• Fuji Electric Co Ltd

Inventors

• Hoshi Yasuyuki

Classifications

• H10D84/839

  comprising VDMOS · CPC title

• H10D30/662

  having a drift region having a doping concentration that is higher between adjacent body regions relative to other parts of the drift region · CPC title

• H10D84/83

  of only insulated-gate FETs [IGFET] · CPC title

• H10D64/513

  within recesses in the substrate, e.g. trench gates, groove gates or buried gates · CPC title

• H10D62/8325

  Silicon carbide · CPC title