Method for transferring compound semiconductor single crystal thin film layer and method for preparing single crystal GaAs-OI composite wafer

Patent metadata

Field	Value
Publication number	US-11574839-B2
Application number	US-202016945371-A
Country	US
Kind code	B2
Filing date	Jul 31, 2020
Priority date	Jul 31, 2019
Publication date	Feb 7, 2023
Grant date	Feb 7, 2023

Abstract

Provided are a method for transferring a compound semiconductor single crystal thin film layer and a method for preparing a single crystal GaAs—OI composite wafer, including: preparing a graphite transition layer on a first substrate; growing the compound semiconductor single crystal thin film layer on the graphite transition layer; preparing a first dielectric layer on the compound semiconductor single crystal thin film layer; preparing a second dielectric layer on a second substrate; combining the first substrate and the second substrate by bonding the first dielectric layer and the second dielectric layer; applying a lateral external pressure, such that the compound semiconductor single crystal thin film layer and the first substrate are transversely split at the graphite transition layer, and the compound semiconductor single crystal thin film layer is transferred to the second substrate.

First claim

What is claimed is:

1. A method for transferring a compound semiconductor single crystal thin film layer, comprising:
preparing a graphite transition layer on a first substrate;
growing the compound semiconductor single crystal thin film layer on the graphite transition layer, wherein the compound semiconductor single crystal thin film layer has the same lattice structure as the first substrate;
preparing a first dielectric layer on the compound semiconductor single crystal thin film layer;
preparing a second dielectric layer on a second substrate;
combining the first substrate and the second substrate by bonding the first dielectric layer and the second dielectric layer; and
applying a lateral external pressure, such that the compound semiconductor single crystal thin film layer and the first substrate are transversely split at the graphite transition layer, and the compound semiconductor single crystal thin film layer is transferred to the second substrate, wherein each of the first dielectric layer and the second dielectric layer is an Si 3 N 4 layer, and the second dielectric layer serves as a buried insulating layer of the second substrate, wherein an SiO 2 layer is further provided between the second substrate and the Si 3 N 4 dielectric layer.

2. The method for transferring a compound semiconductor single crystal thin film layer of claim 1 , wherein the first substrate is a single crystal GaAs substrate or a single crystal Ge substrate.

3. The method for transferring a compound semiconductor single crystal thin film layer of claim 2 , wherein the compound semiconductor single crystal thin film layer is a GaAs single crystal thin film layer.

4. The method for transferring a compound semiconductor single crystal thin film layer of claim 1 , wherein the second substrate is an Si substrate.

5. A method for preparing a single crystal GaAs—OI composite wafer, comprising: preparing an A wafer, comprising: preparing a graphite transition layer on a single crystal GaAs substrate or a single crystal Ge substrate; epitaxially growing a GaAs single crystal thin film layer on the graphite transition layer; and preparing a Si 3 N 4 dielectric layer on the GaAs single crystal thin film layer; preparing a B wafer, comprising: preparing a SiO 2 layer on a surface of a Si substrate; and preparing a Si 3 N 4 dielectric layer on a surface of the SiO 2 layer as a buried insulating layer; and preparing the single crystal GaAs—OI composite wafer, comprising: bonding the Si 3 N 4 layer on a top layer of the A wafer and the Si 3 N 4 layer on a top layer of the B wafer, such that the A wafer and the B wafer are closely combined; and applying a lateral external pressure onto the A wafer, such that the composite wafer is split transversely at the graphite transition layer, removing the single crystal GaAs substrate or the single crystal Ge substrate, and removing the graphite transition layer, thus the single crystal GaAs—OI composite wafer, which has a structure of a Si substrate, a SiO 2 layer, a Si 3 N 4 dielectric layer and a GaAs single crystal thin film layer arranged in sequence, is obtained.

6. The method for preparing a single crystal GaAs—OI composite wafer of claim 5 , wherein, in the A wafer:
a thickness of the graphite transition layer is 50-100 nm, a thickness of the GaAs single crystal thin film layer is 10-2000 nm, and a thickness of the Si 3 N 4 layer is 100-400 nm.

7. The method for preparing a single crystal GaAs—OI composite wafer of claim 5 , wherein, in the B wafer:
a thickness of the Si 3 N 4 layer is 100-400 nm.

8. The method for preparing a single crystal GaAs—OI composite wafer of claim 5 , wherein, after the single crystal GaAs substrate or the single crystal Ge substrate and the graphite transition layer are split transversely and removed under the external pressure, the graphite transition layer remaining on the GaAs single crystal thin film layer is ground away by chemical etching and mechanical grinding and polishing methods to obtain a high-quality GaAs single crystal thin film layer surface.

Assignees

• Univ Beijing Technology

Inventors

• Wang Zhiyong
• Dai Jingjing
• Lan Tian

Classifications

• H10W10/181

  Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers · CPC title

• H10P90/1914 Primary

  using bonding · CPC title

• H10W10/01

  Manufacture or treatment · CPC title

• H10W10/00 Primary

  Isolation regions in semiconductor bodies between components of integrated devices · CPC title

• H10P90/00

  Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement · CPC title