Thin-film thermophotovoltaic cells

Patent metadata

Field	Value
Publication number	US-11569777-B2
Application number	US-201916455015-A
Country	US
Kind code	B2
Filing date	Jun 27, 2019
Priority date	Jun 28, 2018
Publication date	Jan 31, 2023
Grant date	Jan 31, 2023

Abstract

Thermophotovoltaic (TPV) systems and devices with improved efficiencies are disclosed herein. In one example, a thermophotovoltaic (TPV) cell includes an active layer; a back-surface reflective (BSR) layer; and a spacer layer positioned between the active layer and back-surface reflective layer.

First claim

What is claimed is:

1. A thermophotovoltaic (TPV) cell comprising:
an active layer comprising indium gallium arsenide and no antimonide or only trace levels of antimonide;
a back-surface reflective (BSR) layer; and
a spacer layer positioned between the active layer and back-surface reflective layer,
wherein the TPV cell has an average reflectance in a range of 94% to 99% below a bandgap of the TPV cell, as averaged across a spectral range below the bandgap, wherein the spectral range is from the bandgap to 4 microns, and
wherein no growth substrate or lateral conduction layer is positioned between the spacer layer and the active layer.

2. The TPV cell of claim 1 , further comprising:
an anti-reflective coating (ARC) layer,
wherein the active layer is positioned between the ARC layer and the spacer layer.

3. The TPV cell of claim 2 , wherein the ARC layer comprises a plurality of layers.

4. The TPV cell of claim 3 , wherein a first layer of the plurality of layers comprises magnesium fluoride, and a second layer of the plurality of layers comprises zinc selenide.

5. The TPV cell of claim 1 , wherein the BSR layer comprises gold.

6. The TPV cell of claim 1 , wherein the spacer layer comprises magnesium fluoride.

7. The TPV cell of claim 1 , wherein a thickness of the spacer layer is in a range of 0.01-1 micrometers.

8. The TPV cell of claim 1 , wherein a thickness of the active layer is in a range of 0.01-10 micrometers.

9. The TPV cell of claim 1 , further comprising:
an adhesion layer,
wherein the adhesion layer is configured to adhere the BSR layer to a substrate such that BSR layer is positioned between the spacer layer and the substrate.

10. The TPV cell of claim 9 , wherein the adhesion layer comprises iridium, platinum, or titanium.

11. The TPV cell of claim 1 , wherein the TPV cell has a conversion efficiency in a range of 45-52%.

12. The TPV cell of claim 11 , wherein the conversion efficiency is in a range of 50-52%.

13. A thermophotovoltaic (TPV) cell comprising:
an active layer comprising a direct bandgap semiconductor composition;
a back-surface reflective (BSR) layer; and
a spacer layer positioned between the active layer and back-surface reflective layer,
wherein the TPV cell is configured to have an average reflectance in a range of 94% to 99% below a bandgap of the TPV cell, as averaged across a spectral range below the bandgap, wherein the spectral range is from the bandgap to 4 microns, and
wherein no growth substrate or lateral conduction layer is positioned between the spacer layer and the active layer.

14. The TPV cell of claim 13 , wherein the active layer comprises indium gallium arsenide and no antimonide or only trace levels of antimonide.

15. The TPV cell of claim 13 , further comprising:
an anti-reflective coating (ARC) layer,
wherein the active layer is positioned between the ARC layer and the spacer layer.

16. The TPV cell of claim 15 , wherein the ARC layer comprises a plurality of layers,
wherein a first layer of the plurality of layers comprises magnesium fluoride, and a second layer of the plurality of layers comprises zinc selenide.

17. The TPV cell of claim 13 , wherein the spacer layer comprises magnesium fluoride.

18. The TPV cell of claim 13 , wherein the spacer layer has a refractive index of less than 3.5.

19. The TPV cell of claim 2 , wherein a thickness of the ARC layer is in a range of 0.1-1 micrometers,
wherein the thickness of the active layer is in a range of 0.01-10 micrometers, and
wherein a thickness of the spacer layer is in a range of 0.01-1 micrometers.

20. The TPV cell of claim 1 , wherein the average reflectance is an average weighted reflectance.

21. The TPV cell of claim 1 , wherein the average reflectance is in a range of 97-99%.

22. The TPV cell of claim 1 , wherein the TPV cell has a power output in a range of 1.8-2.1 W/cm 2 .

23. The TPV cell of claim 13 , wherein the active layer has no antimonide or only trace levels of antimonide.

24. The TPV cell of claim 13 , wherein the direct bandgap semiconductor composition comprises gallium antimonide (GaSb), indium arsenide (InAs), gallium arsenide (GaAs), indium phosphide (InP), indium gallium arsenide antimonide (InGaAsSb), indium gallium arsenide (InGaAs), indium phosphide arsenide antimonide (InPAsSb), or indium gallium arsenide phosphide (InGaAsP).

25. The TPV cell of claim 13 , wherein the direct bandgap semiconductor composition comprises indium arsenide (InAs), gallium arsenide (GaAs), indium phosphide (InP), indium gallium arsenide (InGaAs), or indium gallium arsenide phosphide (InGaAsP).

26. The TPV cell of claim 13 , wherein the average reflectance is in a range of 95% to 99%.

Assignees

• Univ Michigan Regents

Inventors

• Lenert Andrej
• Forrest Stephen R
• Burger Tobias Eugene
• Fan Deiju
• Lee Kyusang

Classifications

• H02S10/30 Primary

  Thermophotovoltaic systems (photovoltaic cells specially adapted for conversion or sensing of infrared [IR] radiation H10F10/00; thermoelectric devices H10N10/00) · CPC title

• H01L31/056

  Electricity · mapped topic

• H01L31/02168

  Electricity · mapped topic

• H01L31/03046

  Electricity · mapped topic

• H10F77/1248

  having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP · CPC title