Pin device and manufacturing method thereof, photosensitive device and display device

Patent metadata

Field	Value
Publication number	US-11569406-B2
Application number	US-201916763178-A
Country	US
Kind code	B2
Filing date	Dec 19, 2019
Priority date	Mar 26, 2019
Publication date	Jan 31, 2023
Grant date	Jan 31, 2023

Abstract

A PIN device includes: a first doped layer, a second doped layer, and an intrinsic layer between the first doped layer and the second doped layer, where the second doped layer includes a body portion and an electric field isolating portion at least partially enclosing the body portion; and the electric field isolating portion is doped differently from the body portion.

First claim

What is claimed is:

1. A PIN device, comprising:
a first doped layer, a second doped layer, an intrinsic layer between the first doped layer and the second doped layer, and a second electrode on a side of the second doped layer away from the intrinsic layer,
wherein the second doped layer includes a body portion and an electric field isolating portion at least partially enclosing the body portion; the electric field isolating portion is doped differently from the body portion, and the electric field isolating portion directly contacts with the body portion,
wherein an orthographic projection of the body portion on the first doped layer has a size to that is identical to an orthographic projection of the second electrode on the first doped layer, and a cross-sectional area of the body portion along a surface of the intrinsic layer is identical to a cross-sectional area of the second electrode along the surface of the intrinsic layer.

2. The PIN device according to claim 1 , wherein the electric field isolating portion is reversely doped with respect to the body portion.

3. The PIN device according to claim 1 , wherein the electric field isolating portion has an effective concentration of dopants higher than that of the body portion.

4. The PIN device according to claim 1 , wherein the electric field isolating portion comprises: a first further doped portion and a second further doped portion; wherein the second further doped portion is reversely doped with respect to the body portion.

5. The PIN device according to claim 4 , wherein the first further doped portion at least partially encloses the body portion, and the second further doped portion at least partially encloses the first further doped portion; wherein the second further doped portion has an effective concentration of dopants higher than that of the body portion.

6. The PIN device according to claim 5 , wherein the second further doped portion has an effective concentration of dopants higher than that of the first doped layer.

7. The PIN device according to claim 5 , wherein the first further doped portion is reversely doped with respect to the second further doped portion, and has an effective concentration of dopants higher than that of the body portion.

8. The PIN device according to claim 1 , wherein the intrinsic layer comprises: a first region corresponding to the body portion having a first electric field and a second region corresponding to the electric field isolating portion having a second electric field in a reverse direction with respect to the first electric field.

9. The PIN device according to claim 1 , wherein one of the first doped layer and the body portion of the second doped layer is an n-type semiconductor layer, and the other one is a p-type semiconductor layer.

10. The PIN device according to claim 1 , further comprising a first electrode on a side of the first doped layer away from the intrinsic layer; wherein the second electrode is made of a transparent conductive material.

11. The PIN device according to claim 10 , an orthographic projection of the second electrode on the first electrode does not overlap with an orthographic projection of the electric field isolation portion on the first electrode.

12. The PIN device according to claim 10 , wherein the first electrode comprises: a first protective layer, a second protective layer, and a metal layer between first protective layer and the second protective layer.

13. The PIN device according to claim 12 , wherein the material of the first protective layer and the second protective layer comprises: molybdenum or titanium.

14. The PIN device according to claim 12 , wherein the metal layer is made of copper, aluminum or aluminum telluride.

15. A photosensitive device, comprising:
a substrate;
a thin film transistor on the substrate; and
at least one PIN device which comprises:
a first doped layer, a second doped layer, an intrinsic layer between the first doped layer and the second doped layer, and a second electrode on a side of the second doped layer away from the intrinsic layer,
wherein the second doped layer includes a body portion and an electric field isolating portion at least partially enclosing the body portion; and the electric field isolating portion is doped differently from the body portion, and the electric field isolating portion directly contacts with the body portion,
wherein an orthographic projection of the body portion on the first doped layer has a size to that is identical to an orthographic projection of the second electrode on the first doped layer, and a cross-sectional area of the body portion along a surface of the intrinsic layer is identical to a cross-sectional area of the second electrode along the surface of the intrinsic layer.

16. The photosensitive device according to claim 15 , further comprising a bias line configured to receive a bias voltage, wherein
a first electrode of the PIN device is connected to an electrode of the thin film transistor; and
the second electrode of the PIN device is connected to the bias line.

17. A method of manufacturing a PIN device, comprising:
forming a first doped layer, and an intrinsic layer on the first doped layer;
forming a second doped layer on the intrinsic layer, the second doped layer comprising: a body portion and an electric field isolating portion at least partially enclosing the body portion, wherein the electric field isolating portion directly contacts with the body portion;
forming a second electrode on a side of the second doped layer away from the intrinsic layer, wherein an orthographic projection of the body portion on the first doped layer has a size to that is identical to an orthographic projection of the second electrode on the first doped layer, and a cross-sectional area of the body portion along a surface of the intrinsic layer is identical to a cross-sectional area of the second electrode along the surface of the intrinsic layer; and
further doping the electric field isolating portion such that the electric field isolating portion is doped differently from the body portion.

18. The method of claim 17 , further comprising:
providing a substrate; and
forming a first electrode on the substrate;
wherein the first doped layer is formed on the first electrode; and the first electrode comprising a first protective film, a metal film, and a second protective film.

19. The method according to claim 17 , further comprising:
forming a conductive layer on the second doped layer; and
patterning the conductive layer to form the second electrode covering the body portion of the second doped layer and exposing the electric field isolating portion of the second doped layer.

Assignees

• Boe Technology Group Co Ltd

Inventors

• Wang Guoqiang
• Wang Jiushi
• Liu Qingzhao

Classifications

• H01L31/1804

  Electricity · mapped topic

• H01L31/1055 Primary

  Electricity · mapped topic

• H01L31/105

  Electricity · mapped topic

• H01L31/115

  Electricity · mapped topic

• H10F71/121

  The active layers comprising only Group IV materials · CPC title