Etch stop for airgap protection
US-9536982-B1 · Jan 3, 2017 · US
Scaled gate contact and source/drain cap
US11569356B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11569356-B2 |
| Application number | US-202017097419-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 13, 2020 |
| Priority date | Oct 24, 2018 |
| Publication date | Jan 31, 2023 |
| Grant date | Jan 31, 2023 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
The present disclosure relates to semiconductor structures and, more particularly, to a scaled gate contact and source/drain cap and methods of manufacture. The structure includes: a gate structure comprising an active region; source and drain contacts adjacent to the gate structure; a capping material over the source and drain contacts; a gate contact formed directly above the active region of the gate structure and over the capping material; a U-shape dielectric material around the gate contact, above the source and drain contacts; and a contact in direct electrical contact to the source and drain contacts.
First claim
Opening claim text (preview).
What is claimed: 1. A structure comprising: a gate structure comprising at least source and drain contacts and a gate contact, the source and drain contacts including a lower contact and an upper contact; and a U-shape dielectric material comprising a capping material and a liner material, wherein the capping material comprises a source/drain cap underneath a portion of the gate contact, wherein: the liner material extends on sidewalls of the gate contact above the upper conta…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US11569356B2 cover?
- The present disclosure relates to semiconductor structures and, more particularly, to a scaled gate contact and source/drain cap and methods of manufacture. The structure includes: a gate structure comprising an active region; source and drain contacts adjacent to the gate structure; a capping material over the source and drain contacts; a gate contact formed directly above the active region of…
- Who is the assignee on this patent?
- Globalfoundries Inc, Globalfoundries Us Inc
- What technology area does this patent fall under?
- Primary CPC classification H01L29/41775. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 31 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).