Array substrate, method for preparing the same, and display device

Patent metadata

Field	Value
Publication number	US-11569275-B2
Application number	US-202016957354-A
Country	US
Kind code	B2
Filing date	Feb 13, 2020
Priority date	Mar 11, 2019
Publication date	Jan 31, 2023
Grant date	Jan 31, 2023

Abstract

The present disclosure provides an array substrate, a method for preparing the same, and a display device. The method includes: forming a metal layer on a base substrate; coating a photoresist on the metal layer; exposing the photoresist by a mask plate in such a manner that an amount of light acting on a first photoresist portion is less than that of light acting on a second photoresist portion to form a first photoresist reserved portion located and a second photoresist reserved portion located; after etching off the metal portion, stripping the first photoresist reserved portion and the second photoresist reserved portion, to obtain the first metal pattern located in the fan-out area and the second metal pattern located in the display area, in which a period size of the first metal pattern being smaller than a period size of the second metal pattern.

First claim

What is claimed is:

1. A method for preparing an array substrate, comprising:
forming a metal layer on a base substrate;
coating a photoresist on the metal layer;
exposing the photoresist by a mask plate in such a manner that an amount of light acting on a first photoresist portion is less than an amount of light acting on a second photoresist portion to form a first photoresist reserved portion located in a fan-out area and a second photoresist reserved portion located in a display area, wherein a width of the first photoresist reserved portion is less than a width of the second photoresist reserved portion, the first photoresist portion is located in the fan-out area, and the second photoresist portion is located in the display area;
etching off a metal portion of the metal layer corresponding to a photoresist removal portion; and
stripping the first photoresist reserved portion and the second photoresist reserved portion, to obtain a first metal pattern located in the fan-out area and a second metal pattern located in the display area, wherein a period size of the first metal pattern is smaller than 80% of a period size of the second metal pattern, and the photoresist removal portion is a portion of the photoresist other than the first photoresist reserved portion and the second photoresist reserved portion,
wherein the forming the metal layer on the base substrate comprises:
forming a first metal layer on the base substrate of the fan-out area;
forming an original poly-silicon structure layer on the base substrate of the display area;
forming a second metal layer on the original poly-silicon structure layer; and
wherein the method further comprises:
implanting P + ions into a poly-silicon structure of the original poly-silicon structure layer located in a first conversion region, to convert it into a source-drain doped poly-silicon structure, wherein an orthogonal projection of the first conversion region on the base substrate does not coincide with an orthogonal projection of the second photoresist reserved portion on the base substrate.

2. The method of claim 1 , wherein the method further comprises:
implanting P + ions into a poly-silicon structure of the original poly-silicon structure layer located in a second conversion region, to convert it into a drain lightly doped poly-silicon structure, wherein an orthogonal projection of the second conversion region on the base substrate is located between the orthogonal projection of the first conversion region on the base substrate and the orthogonal projection of the second photoresist reserved portion on the base substrate.

3. The method of claim 1 , wherein the exposing the photoresist by the mask plate in such a manner that the amount of light acting on the first photoresist portion is less than the amount of light acting on the second photoresist portion to form the first photoresist reserved portion located in the fan-out area and the second photoresist reserved portion located in the display area comprises:
exposing the first photoresist portion by a first mask plate to form the first photoresist reserved portion located in the fan-out area; and
exposing the second photoresist portion by a second mask plate to form the second photoresist reserved portion located in the display area,
wherein an exposure amount for exposing the first photoresist portion is less than an exposure amount for exposing the second photoresist portion.

4. The method of claim 3 , wherein the exposing the first photoresist portion by the first mask plate to form the first photoresist reserved portion located in the fan-out area comprises:
exposing the photoresist by a first mask plate, wherein the first mask plate comprises a first opaque pattern corresponding to the display area and a second opaque pattern corresponding to the first photoresist reserved portion; and
forming the first photoresist reserved portion located in the fan-out area and the photoresist located in the display area after development.

5. The method of claim 3 , wherein the exposing the second photoresist portion by the second mask plate to form the second photoresist reserved portion located in the display area comprises:
exposing the photoresist by a second mask plate, wherein the second mask plate comprises a third opaque pattern corresponding to the fan-out area and a fourth opaque pattern corresponding to the second photoresist reserved portion; and
forming the second photoresist reserved portion located in the display area and the photoresist located in the fan-out area after development.

6. The method of claim 1 , wherein the exposing the photoresist by the mask plate in such a manner that the amount of light acting on the first photoresist portion is less than the amount of light acting on the second photoresist portion to form the first photoresist reserved portion located in the fan-out area and the second photoresist reserved portion located in the display area comprises:
exposing the photoresist on the metal layer by a gray tone mask plate, wherein the gray tone mask plate comprises opaque patterns located in the fan-out area and in the display area, a partially transparent pattern located in the fan-out area and outside the opaque patterns, and a transparent pattern located in the display area and outside the opaque pattern; and
after development, forming a photoresist removal portion corresponding to a region of the display area other than the second photoresist reserved portion, a photoresist partially reserved portion corresponding to a region of the fan-out area other than the first photoresist reserved portion, a first photoresist reserved portion corresponding to the first photoresist reserved portion in the fan-out area, and a second photoresist reserved portion corresponding to the second photoresist reserved portion in the display area.

7. The method of claim 6 , wherein the coating photoresist on the metal layer comprises:
coating a photoresist on the metal layer, wherein a thickness of the photoresist corresponding to the first photoresist reserved portion is greater than a thickness of the photoresist in other portions.

8. The method of claim 6 , wherein the etching off the metal portion of the metal layer corresponding to the photoresist removal portion comprises:
etching off the metal layer corresponding to the photoresist removal portion; and
ashing the photoresist partially reserved portion, and etching off the metal layer corresponding to the photoresist partially reserved portion.

9. A method for preparing an array substrate, comprising:
forming a metal layer on a base substrate;
coating a photoresist on the metal layer;
exposing the photoresist by a mask plate in such a manner that an amount of light acting on a first photoresist portion is less than an amount of light acting on a second photoresist portion to form a first photoresist reserved portion located in a fan-out area and a second photoresist reserved portion located in a display area, wherein a width of the first photoresist reserved portion is less than a width of the second photoresist reserved portion, the first photoresist portion is located in the fan-out area, and the second photoresist portion is located in the display area;
etching off a metal portion of the metal layer corresponding to a photoresist removal portion; and
stripping the first photoresist reserved portion and the second photoresist reserved portion, to obtain a first metal pattern located in the fan-out area and a second metal pattern located in the display area, wherein a period size of the first metal pattern is smaller than 80% of a period size of the second metal pattern, and the photoresist removal portion is a portion of the photoresis

Assignees

• Ordos Yuansheng Optoelectronics Co Ltd
• Boe Technology Group Co Ltd

Inventors

• Zhou Guoqing
• Wang Chao
• Zhao Shengwei
• Lv Jingping
• Xie Lin
• Chang Zhiqiang

Classifications

• H01L27/1288 Primary

  Electricity · mapped topic

• H01L27/124

  Electricity · mapped topic

• H10D86/441 Primary

  Interconnections, e.g. scanning lines · CPC title

• H10D86/60

  wherein the TFTs are in active matrices · CPC title

• H10D86/0231 Primary

  using masks, e.g. half-tone masks · CPC title