Pattern formation method, laminate, and method of producing touch panel

US11567410B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11567410-B2
Application numberUS-202016752080-A
CountryUS
Kind codeB2
Filing dateJan 24, 2020
Priority dateJul 28, 2017
Publication dateJan 31, 2023
Grant dateJan 31, 2023

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Provided are a pattern formation method including a step of preparing a base material which has an etching layer transparent to an exposure wavelength on each of two surfaces thereof and is transparent to the exposure wavelength, a step of forming a photosensitive resin layer, in which an optical density to the exposure wavelength is in a range of 0.50 to 2.50, on the etching layer on each of the two surfaces of the base material, a step of pattern-exposing the photosensitive resin layer, a step of developing the photosensitive resin layer to form a resist pattern on two surfaces, a step of removing the etching layer on a portion that is not coated with the resist pattern, and a step of peeling the resist pattern off, in this order, a laminate, and a method of producing a touch panel.

First claim

Opening claim text (preview).

What is claimed is: 1. A pattern formation method comprising: a step of preparing a base material which has an etching layer transparent to an exposure wavelength on each of two surfaces thereof and is transparent to the exposure wavelength; a step of forming a photosensitive resin layer, in which an optical density to the exposure wavelength is in a range of 0.50 to 2.50, on the etching layer on each of the two surfaces of the base material; a step of pattern-exposing the photosensitive resin layer; a step of developing the photosensitive resin layer to form a resist pattern on each of the two surfaces; a step of removing the etching layer on a portion that is not coated with the resist pattern; and a step of peeling the resist pattern off, in this order. 2. The pattern formation method according to claim 1 , wherein an exposure amount in the step of exposure is in a range of 10 (n−0.5) mJ/cm 2 to 10 (n+1.5) mJ/cm 2 , and n represents the optical density of the photosensitive resin layer to the exposure wavelength. 3. The pattern formation method according to claim 2 , wherein the exposure amount in the step of exposure is in a range of 10 n mJ/cm 2 to 10 (n+1.0) mJ/cm 2 . 4. The pattern formation method according to claim 1 , wherein a film thickness of the photosensitive resin layer is 8.0 μm or less. 5. The pattern formation method according to claim 1 , wherein exposure light in the step of exposure has a maximum wavelength at a wavelength of 365 nm. 6. The pattern formation method according to claim 1 , wherein the step of forming the photosensitive resin layer is a step of laminating a transfer film, which includes a temporary support and a photosensitive resin layer with an optical density of 0.50 to 2.50 on the temporary support, on the etching layer. 7. The pattern formation method according to claim 6 , wherein an optical density of the entire transfer film having been laminated in the step of laminating the transfer film is in a range of 0.50 to 2.50. 8. The pattern formation method according to claim 1 , wherein the optical density of the formed photosensitive resin layer in the step of forming the photosensitive resin layer is in a range of 1.00 to 2.00. 9. The pattern formation method according to claim 1 , wherein the photosensitive resin layers on the two surfaces of the base material are simultaneously exposed in the step of exposure. 10. The pattern formation method according to claim 1 , wherein the etching layer is a conductive layer. 11. The pattern formation method according to claim 1 , wherein the photosensitive resin layer contains a polymerizable compound and a polymerization initiator. 12. The pattern formation method according to claim 1 , wherein the photosensitive resin layer contains an ultraviolet absorbing material. 13. The pattern formation method according to claim 12 , wherein the ultraviolet absorbing material contains carbon black. 14. A method of producing a touch panel, comprising: the pattern formation method according to claim 1 . 15. A laminate comprising: a base material which is transparent to an exposure wavelength; two etching layers which are respectively disposed on two surfaces of the base material and are transparent to the exposure wavelength; and two photosensitive resin layers which are respectively disposed on the two etching layers and in which an optical density to the exposure wavelength is in a range of 0.50 to 2.50.

Assignees

Inventors

Classifications

  • Manufacturing circuit on or in base · CPC title

  • Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means · CPC title

  • characterised by structural details, e.g. supports, auxiliary layers (supports for printing plates in general B41N) · CPC title

  • by exposure and development of a photosensitive insulating layer · CPC title

  • Photoresists · CPC title

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What does patent US11567410B2 cover?
Provided are a pattern formation method including a step of preparing a base material which has an etching layer transparent to an exposure wavelength on each of two surfaces thereof and is transparent to the exposure wavelength, a step of forming a photosensitive resin layer, in which an optical density to the exposure wavelength is in a range of 0.50 to 2.50, on the etching layer on each of t…
Who is the assignee on this patent?
Fujifilm Corp
What technology area does this patent fall under?
Primary CPC classification G03F7/26. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jan 31 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).