Photoelectric semiconductor device
US-2017250317-A1 · Aug 31, 2017 · US
US11566174B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11566174-B2 |
| Application number | US-201716302748-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 10, 2017 |
| Priority date | Aug 12, 2016 |
| Publication date | Jan 31, 2023 |
| Grant date | Jan 31, 2023 |
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A phosphor is specified. The phosphor has the general molecular formula:(MA)a(MB)b(MC)c(MD)d(TA)e(TB)f(TC)g(TD)h(TE)i(TF)j(XA)k(XB)l(XC)m(XD)n:E.In this case, MA is selected from a group of monovalent metals, MB is selected from a group of divalent metals, MC is selected from a group of trivalent metals, MD is selected from a group of tetravalent metals, TA is selected from a group of monovalent metals, TB is selected from a group of divalent metals, TC is selected from a group of trivalent metals, TD is selected from a group of tetravalent metals, TE is selected from a group of pentavalent elements, TF is selected from a group of hexavalent elements, XA is selected from a group of elements which comprises halogens, XB is selected from a group of elements which comprises O, S and combinations thereof, -E=Eu, Ce, Yb and/or Mn, XC=N and XD=C. The following furthermore hold true: a+b+c+d=t; e+f+g+h+i+j=u; k+l+m+n=v; a+2b+3c+4d+e+2f+3g+4h+5i+6j−k−2l−3m−4n=w; 0.8≤t≤1; 3.5≤u≤4; 3.5≤v≤4; (−0.2)≤w≤0.2 and 0≤m<0.875 v and/or v≥1>0.125 v.
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What is claimed is: 1. A phosphor having the general molecular formula (MA) 1 (TA) 3 (TD) 1 (XB) 4 E, herein MA is selected from a group of monovalent metals which comprises Li, Na, K, Rb, Cs and combinations thereof, TA=Li, TD=Si, XB=O and E is selected from a group which comprises Eu, Ce, Yb, Mn and combinations thereof. 2. The phosphor as claimed in claim 1 , wherein the phosphor has a crystal structure in which TA and TD are surrounded by XB and the resultant structural units are linked via common corners and edges to form a three-dimensional spatial network having cavities or channels and MA is arranged in the cavities or channels. 3. The phosphor as claimed in claim 1 , wherein the phosphor has the following general molecular formula: (Na r K 1−r ) 1 (TA) 3 (TD) 1 (XB) 4 :E, wherein 0≤r≤1. 4. The phosphor as claimed in claim 3 , wherein the phosphor crystallizes in the space group I4 1 /a, I4/m or P-1. 5. The phosphor as claimed in claim 3 , wherein 0.05<r≤0.2. 6. The phosphor as claimed in claim 3 , wherein 0.4<r≤1. 7. The phosphor as claimed in claim 1 , wherein the phosphor has the following general molecular formula: (Rb r′ Li 1−r′ ) 1 (TA) 3 (TD) 1 (XB) 4 :E, wherein 0≤r′≤1. 8. The phosphor as claimed in claim 7 , wherein 0.25≤r′≤0.75. 9. The phosphor as claimed in claim 1 , wherein the phosphor has the following general molecular formula: (K 1−r″−r′″ Na r″ Li r′″ ) 1 (TA) 3 (TD) 1 (XB) 4 :E, wherein 0<r″<0.5 and 0<r′″<0.5. 10. The phosphor as claimed in claim 9 , wherein the phosphor crystallizes in the space group I4/m or C2/m. 11. The phosphor as claimed in claim 1 , wherein the phosphor has the following general molecular formula: (Rb r* Na 1−r* ) 1 (TA) 3 (TD) 1 (XB) 4 :E, wherein 0<r* <1. 12. The phosphor as claimed in claim 11 , wherein the phosphor crystallizes in the space group I4/m or C2/m. 13. The phosphor as claimed in claim 1 , wherein the phosphor has the following general molecular formula: (Cs,Na,K,Li) 1 (TA) 3 (TD) 1 (XB) 4 :E. 14. The phosphor as claimed in claim 1 , wherein the phosphor has the following general molecular formula: (Cs,Na,Rb,Li) 1 (TA) 3 (TD) 1 (XB) 4 :E. 15. The phosphor as claimed in claim 1 , wherein the phosphor has the following general molecular formula: (Cs,Na,K) 1 (TA) 3 (TD) 1 (XB) 4 :E. 16. The phosphor as claimed in claim 1 , wherein the phosphor has the following general molecular formula: (Rb,Na,K) 1 (TA) 3 (TD) 1 (XB) 4 :E. 17. A method for producing a phosphor as claimed in claim 1 comprising the following method steps: A) mixing starting materials of the phosphor, B) heating the mixture obtained under A) to a temperature T1 of between 500 and 1400° C., C) annealing the mixture at a temperature T1 of 500 to 1400° C. for 0.5 minute to ten hours.
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