Method for manufacturing IGBT device

Patent metadata

Field	Value
Publication number	US-11563103-B2
Application number	US-202117230231-A
Country	US
Kind code	B2
Filing date	Apr 14, 2021
Priority date	Aug 31, 2020
Publication date	Jan 24, 2023
Grant date	Jan 24, 2023

Abstract

A method for manufacturing an IGBT device includes: forming a source of the IGBT device in a substrate, wherein the substrate is an MCZ substrate; performing annealing processing on the substrate, wherein a layer of oxide is formed on the surface of the source during an annealing process; forming an interlayer dielectric layer on the substrate, wherein the interlayer dielectric layer is comprised of a silicon nitride layer, a first type oxide layer, and a second type oxide layer, and a material used to form the first type oxide layer is different from a material used to form the second type oxide layer; and performing nitrogen annealing processing on the substrate.

First claim

What is claimed is:

1. A method for manufacturing an IGBT device, comprising:
forming a source of the IGBT device in a substrate, wherein the substrate is an MCZ substrate, and wherein a diameter of the substrate is 12 inches;
performing annealing processing on the substrate, wherein a layer of oxide is formed on the surface of the source during an annealing process;
forming an interlayer dielectric layer on the substrate, wherein the interlayer dielectric layer is comprised of a silicon nitride layer, a first type oxide layer, and a second type oxide layer, and a material used to form the first type oxide layer is different from a material used to form the second type oxide layer; and
performing nitrogen annealing processing on the substrate.

2. The method for manufacturing an IGBT device, according to claim 1 , wherein the forming an interlayer dielectric layer on the substrate, comprising:
performing an LPCVD process to form the silicon nitride layer on the substrate; and
performing PECVD processes to sequentially form the first type oxide layer and the second type oxide layer on the silicon nitride layer.

3. The method for manufacturing an IGBT device, according to claim 2 , wherein the material of the first type oxide layer is silicon rich oxides, and the material of the second type oxide layer is oxides produced by means of chemical reactions.

4. The method for manufacturing an IGBT device, according to claim 2 , wherein the material of the first type oxide layer is oxide produced by a chemical reaction between O3 and TEOS, and the material of the second type oxide layer is oxide obtained from decomposition of TEOS.

5. The method for manufacturing an IGBT device, according to claim 1 , wherein the IGBT device is an FS-type IGBT device.

6. The method for manufacturing an IGBT device, according to claim 1 , wherein before forming a source of the IGBT device on a substrate, the method further comprising:
forming a gate structure of the IGBT device.

7. The method for manufacturing an IGBT device, according to claim 1 , wherein forming a source of the IGBT device in a substrate, comprising:
implanting N-type doping ions into a body of the IGBT device by means of an ion implantation process, to form the source.

Assignees

• Hua Hong Semiconductor Wuxi Ltd
• Shanghai Huahong Grace Semiconductor Mfg Corp

Inventors

• Feng Chao
• Chen Zhengrong
• Pan Jia
• Yao Tinghui
• Jin Yu

Classifications

• H10P32/1406

  by ion implantation · CPC title

• H10P32/171

  being group IV material · CPC title

• H01L29/66325 Primary

  Electricity · mapped topic

• H01L21/2253

  Electricity · mapped topic

• H01L29/0638

  Electricity · mapped topic