Sensor membrane structure with insulating layer

Patent metadata

Field	Value
Publication number	US-11561145-B2
Application number	US-202017061216-A
Country	US
Kind code	B2
Filing date	Oct 1, 2020
Priority date	Dec 27, 2019
Publication date	Jan 24, 2023
Grant date	Jan 24, 2023

Abstract

A sensor membrane structure is provided. The sensor membrane structure includes a substrate, a first insulating layer, and a device layer. The substrate has a first surface and a second surface that is opposite to the first surface. A cavity is formed on the first surface, an opening is formed on the second surface, and the cavity communicates with the opening. The cavity and the opening penetrate the substrate in a direction that is perpendicular to the first surface. The first insulating layer is disposed on the first surface of the substrate. The device layer is disposed on the first insulating layer. The first insulating layer is disposed for protecting the sensor membrane structure from overetched and remain stable during the etching process, increasing the yield of the sensor membrane structure.

First claim

What is claimed is:

1. A sensor membrane structure, comprising:
a substrate having a first surface and a second surface that is opposite to the first surface, wherein a cavity is formed on the first surface, an opening is formed on the second surface, the cavity communicates with the opening, and the cavity and the opening penetrate the substrate in a direction that is perpendicular to the first surface;
a first insulating layer disposed on the first surface of the substrate, wherein the first insulating layer and the opening at least partially overlap in the direction that is perpendicular to the first surface; and
a device layer disposed on the first insulating layer.

2. The sensor membrane structure as claimed in claim 1 , wherein a width of the cavity is greater than a width of the opening in a direction that is parallel to the first surface.

3. The sensor membrane structure as claimed in claim 1 , further comprising a second insulating layer disposed on the device layer, wherein a via hole is formed in the second insulating layer, and the via hole and the cavity do not overlap in the direction that is perpendicular to the first surface.

4. The sensor membrane structure as claimed in claim 3 , further comprising a conductive element disposed on the second insulating layer, wherein the conductive element extends over the via hole.

5. The electronic device as claimed in claim 1 , further comprising an electronic component disposed in the device layer, wherein the electronic component and the cavity at least partially overlap in the direction that is perpendicular to the first surface.

6. The sensor membrane structure as claimed in claim 1 , wherein an interface is formed between the device layer and the cavity.

7. The sensor membrane structure as claimed in claim 1 , wherein the device layer and the cavity are separated by the first insulating layer.

8. The sensor membrane structure as claimed in claim 1 , wherein the substrate has a plurality of openings formed on the second surface, and the openings communicate with the cavity.

9. The sensor membrane structure as claimed in claim 8 , wherein the width of the cavity is greater than a sum of the width of all the openings in the direction that is parallel to the first surface.

10. The sensor membrane structure as claimed in claim 1 , wherein the substrate has:
a plurality of cavities formed on the first surface; and
a plurality of openings formed on the second surface, wherein each of the cavities communicates with at least one of the openings.

11. The sensor membrane structure as claimed in claim 1 , wherein a thickness of the first insulating layer that corresponds to the opening is shorter than a thickness of the first insulating layer that does not correspond to the opening.

Assignees

• Nuvoton Technology Corp

Inventors

• Hsu Chung-Lung
• Chen Kuang-Chu
• Hsiao Peng-Chan
• Liu han-ying

Classifications

• G01L9/0072

  using variations in capacitance · CPC title

• B81B7/02

  containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS] (B81B7/04 takes precedence) · CPC title

• B81B2201/0264

  Pressure sensors · CPC title

• G01L7/082 Primary

  construction or mounting of diaphragms (of semiconductive diaphragms G01L9/0042) · CPC title

• B81C1/00801

  Avoid alteration of functional structures by etching, e.g. using a passivation layer or an etch stop layer (B81C1/00595, B81C1/00468 take precedence) · CPC title