Bulk-acoustic wave resonator

Patent metadata

Field	Value
Publication number	US-11558030-B2
Application number	US-201916591862-A
Country	US
Kind code	B2
Filing date	Oct 3, 2019
Priority date	Jul 3, 2019
Publication date	Jan 17, 2023
Grant date	Jan 17, 2023

Abstract

A bulk-acoustic wave resonator may include: a substrate; a resonance portion; a first electrode disposed on the substrate; a piezoelectric layer disposed on the first electrode in the resonance portion; a second electrode disposed on the piezoelectric portion in the resonance portion; and a seed layer disposed in a lower portion of the first electrode. The seed layer may be formed of titanium (Ti) having a hexagonal close packed (HCP) structure, or an alloy of Ti having the HCP structure. The seed layer may have a thickness greater than or equal to 300 Å and less than or equal to 1000 Å, or may be thinner than the first electrode.

First claim

What is claimed is:

1. A bulk-acoustic wave resonator, comprising:
a substrate;
a resonance portion;
a first electrode disposed on the substrate;
a piezoelectric layer disposed on the first electrode in the resonance portion;
a second electrode disposed on the piezoelectric portion in the resonance portion; and
a seed layer disposed in a lower portion of the first electrode;
wherein the seed layer is formed of titanium (Ti) having a hexagonal close packed (HCP) structure, or an alloy of Ti having the HCP structure,
wherein the seed layer has a thickness greater than or equal to 300 Å and less than or equal to 1000 Å, or is thinner than the first electrode, and
wherein the piezoelectric layer comprises aluminum nitride (AlN) and the AlN comprises 20 wt % to 40 wt % of scandium (Sc).

2. The bulk-acoustic wave resonator of claim 1 , wherein the first electrode is formed of molybdenum (Mo).

3. The bulk-acoustic wave resonator of claim 1 , further comprising an insertion layer partially disposed in the resonance portion and disposed between the first electrode and the piezoelectric layer, and
wherein the piezoelectric layer is partially raised by the insertion layer.

4. The bulk-acoustic wave resonator of claim 3 , wherein the insertion layer comprises an inclined surface, and the piezoelectric layer comprises an inclined portion disposed on the inclined surface.

5. The bulk-acoustic wave resonator of claim 4 , wherein an end of the second electrode is disposed on the inclined portion.

6. The bulk-acoustic wave resonator of claim 4 , wherein the piezoelectric layer comprises an extension portion disposed on an external side of the inclined portion, and at least a portion of the second electrode is disposed on the extension portion.

7. A bulk-acoustic wave resonator, comprising:
a substrate;
a resonance portion;
a first electrode disposed on the substrate;
a piezoelectric layer disposed on the first electrode in the resonance portion;
a second electrode disposed on the piezoelectric layer in the resonance portion;
a barrier layer disposed between the piezoelectric layer and the first electrode; and
an insertion layer partially disposed in the resonance portion and disposed at least partially on the barrier layer between the first electrode and the piezoelectric layer such that the piezoelectric layer is partially raised by the insertion layer,
wherein the barrier layer is formed of titanium (Ti) having a hexagonal close packed (HCP) structure or an alloy of Ti having the HCP structure, and
wherein the barrier layer has a thickness of 100 Å to 900 Å.

8. The bulk-acoustic wave resonator of claim 7 , wherein the piezoelectric layer comprises aluminum nitride (AlN) or AlN comprising scandium (Sc).

9. The bulk-acoustic wave resonator of claim 8 , the piezoelectric layer is formed of aluminum nitride comprising 20 wt % to 40 wt % of Sc.

10. The bulk-acoustic wave resonator of claim 7 , wherein the first electrode is formed of molybdenum (Mo).

11. A bulk-acoustic wave resonator, comprising:
a substrate;
a resonance portion;
a first electrode disposed on the substrate;
a piezoelectric layer disposed on the first electrode in the resonance portion;
a second electrode disposed on the piezoelectric layer in the resonance portion;
a seed layer disposed in a lower portion of the first electrode;
a barrier layer disposed between the piezoelectric layer and the first electrode; and
an insertion layer partially disposed in the resonance portion and disposed at least partially on the barrier layer between the first electrode and the piezoelectric layer such that the piezoelectric layer is partially raised by the insertion layer,
wherein the seed layer and the barrier layer are formed of titanium (Ti) having a hexagonal close packed (HCP) structure or an alloy of Ti having the HCP structure.

12. The bulk-acoustic wave resonator of claim 11 , wherein a thickness of the seed layer is 300 Å to 1000 Å.

13. The bulk-acoustic wave resonator of claim 12 , wherein a thickness of the barrier layer is 100 Å to 900 Å.

14. The bulk-acoustic wave resonator of claim 11 , wherein a thickness of the barrier layer is 100 Å to 900 Å.

Assignees

• Samsung Electro Mech

Inventors

• Lee Tae Kyung
• Shin Ran Hee
• Son Jin Suk
• Kyoung Je Hong

Classifications

• H03H2009/02173

  of film bulk acoustic resonators [FBAR] · CPC title

• H03H9/173

  Air-gaps · CPC title

• H03H9/02015 Primary

  Characteristics of piezoelectric layers, e.g. cutting angles · CPC title

• H03H2003/023

  the resonators or networks being of the membrane type · CPC title

• H03H9/131 Primary

  consisting of a multilayered structure · CPC title