Quantum dot devices with selectors

Patent metadata

Field	Value
Publication number	US-11557630-B2
Application number	US-201716643322-A
Country	US
Kind code	B2
Filing date	Sep 28, 2017
Priority date	Sep 28, 2017
Publication date	Jan 17, 2023
Grant date	Jan 17, 2023

Abstract

Disclosed herein are quantum dot devices and techniques. In some embodiments, a quantum computing processing device may include a quantum well stack, an array of quantum dot gate electrodes above the quantum well stack, and an associated array of selectors above the array of quantum dot gate electrodes. The array of quantum dot gate electrodes and the array of selectors may each be arranged in a grid.

First claim

The invention claimed is:

1. A quantum dot device, comprising:
a quantum well stack;
a quantum dot gate electrode above the quantum well stack; and
a selector above the quantum dot gate electrode, wherein the selector includes a first contact, a second contact, and a selector material between the first contact and the second contact, and wherein the first contact is electrically coupled to the quantum dot gate electrode.

2. The quantum dot device of claim 1 , wherein the quantum dot gate electrode is a first quantum dot gate electrode, the selector is a first selector, and the quantum dot device further includes:
a second quantum dot gate electrode above the quantum well stack; and
a second selector above the second quantum dot gate electrode, wherein the second selector includes a first contact, a second contact, and a selector material between the first contact and the second contact of the second selector, and wherein the first contact of the second selector is electrically coupled to the second quantum dot gate electrode.

3. The quantum dot device of claim 2 , wherein the second contact of the first selector is electrically coupled to the second contact of the second selector.

4. The quantum dot device of claim 3 , wherein the quantum dot device further includes:
a third quantum dot gate electrode above the quantum well stack; and
a third selector above the third quantum dot gate electrode, wherein the third selector includes a first contact, a second contact, and a selector material between the first contact and the second contact of the third selector, wherein the first contact of the third selector is electrically coupled to the third quantum dot gate electrode, and wherein the second contact of the third selector is electrically coupled to the second contact of the second selector.

5. The quantum dot device of claim 2 , further comprising:
an accumulation region;
a first pair of conductive pathways in contact with the accumulation region, wherein the first quantum dot gate electrode is at least partially between the conductive pathways in the first pair of conductive pathways; and
a second pair of conductive pathways in contact with the accumulation region, wherein the second quantum dot gate electrode is at least partially between the conductive pathways in the second pair of conductive pathways.

6. The quantum dot device of claim 1 , further comprising:
a selector gate electrode; and
a selector gate dielectric between the selector material and the selector gate electrode.

7. The quantum dot device of claim 6 , wherein the selector gate dielectric wraps around the selector material, and the selector gate electrode wraps around the selector gate dielectric.

8. The quantum dot device of claim 6 , wherein the quantum dot gate electrode is a first quantum dot gate electrode, the selector is a first selector, the selector gate electrode is a first selector gate electrode, the selector gate dielectric is a first selector gate dielectric, and the quantum dot device further includes:
a second quantum dot gate electrode above the quantum well stack;
a second selector above the second quantum dot gate electrode, wherein the second selector includes a selector material;
a second selector gate electrode; and
a second selector gate dielectric between the selector material of the second selector and the second selector gate electrode;
wherein the second selector gate electrode is materially continuous with the first selector gate electrode.

9. The quantum dot device of claim 8 , wherein the quantum dot device further includes:
a third quantum dot gate electrode above the quantum well stack;
a third selector above the third quantum dot gate electrode, wherein the third selector includes a selector material;
a third selector gate electrode; and
a third selector gate dielectric between the selector material of the third selector and the third selector gate electrode;
wherein the third selector gate electrode of the second selector is not materially continuous with the first selector gate electrode.

10. The quantum dot device of claim 1 , wherein the selector material includes an oxide material, a chalcogenide material, a group IV element, a group VI element, or an ovonic material.

11. The quantum dot device of claim 1 , wherein a bit line is coupled to the second contact.

12. The quantum dot device of claim 11 , wherein a word line is coupled to an accumulation region.

Assignees

• Intel Corp

Inventors

• Pillarisetty Ravi
• Thomas Nicole K
• Sharma Abhishek A
• George Hubert C
• Roberts Jeanette M
• Yoscovits Zachary R
• Caudillo Roman
• Singh Kanwaljit
• Clarke James S

Classifications

• H01L29/778

  Electricity · mapped topic

• H01L29/4232

  Electricity · mapped topic

• H01L29/437

  Electricity · mapped topic

• H01L45/1206

  Electricity · mapped topic

• H01L45/1233

  Electricity · mapped topic