Zero power plasmonic microelectromechanical device

US11557449B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11557449-B2
Application numberUS-202016866745-A
CountryUS
Kind codeB2
Filing dateMay 5, 2020
Priority dateAug 20, 2015
Publication dateJan 17, 2023
Grant dateJan 17, 2023

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  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

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  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A zero-power plasmonic microelectromechanical system (MEMS) device is capable of specifically sensing electromagnetic radiation and performing signal processing operations. Such devices are highly sensitive relays that consume no more than 10 nW of power, utilizing the energy in detected electromagnetic radiation to detect and discriminate a target without the need of any additional power source. The devices can continuously monitor an environment and wake up an electronic circuit upon detection of a specific trigger signature of electromagnetic radiation, such as vehicular exhaust, gunfire, an explosion, a fire, a human or animal, and a variety of sources of radiation from the ultraviolet to visible light, to infrared, to terahertz radiation.

First claim

Opening claim text (preview).

The invention claimed is: 1. A device comprising: a substrate, at least one electrical contact disposed on a surface of the substrate; a cantilever disposed on the substrate, the cantilever comprising a head, the head including a contact element disposed at a free end of the cantilever for movement into and out of electrical contact with the at least one electrical contact disposed on the surface of the substrate, and the contact element comprises a metal bowl-shaped structure comprising: a contact surface facing the at least one electrical contact disposed on the surface of the substrate, a central portion comprising an interior surface facing in a direction away from the at least one contact, and a peripheral portion extending from the interior surface in the direction facing away from the at least one electrical contact, wherein the central portion and the peripheral portion define an interior space of the bowl-shaped structure open in the direction facing away from the at least one electrical contact; wherein the cantilever further comprises an inner pair of temperature-sensitive bimaterial legs, and an outer pair of temperature-sensitive bimaterial legs, the inner pair of legs attached to opposite sides of the head, the outer pair of legs attached to the surface of the substrate and disposed adjacent to the inner pair of legs forming first and second sets of inner and outer legs, the first and second sets of legs disposed symmetrically on opposite sides of the head; and a first thermal isolation region connects the inner and outer legs of the first set of legs, and a second thermal isolation region connects the inner and outer legs of the second set of legs; and wherein the device is a microelectromechanical device, and the head has a microscale length and width and a nanoscale or microscale thickness. 2. The device of claim 1 , wherein the central portion has a thickness of approximately 500 nm. 3. The device of claim 1 , wherein the contact element includes an extending contact tip, the contact tip having a width of about 4 μm. 4. The device of claim 1 , wherein the contact element has a stiffness greater than a stiffness of the cantilever. 5. The device of claim 1 , wherein the contact element has a stiffness greater than 0.05 N/m. 6. The device of claim 1 , wherein the contact element has a stiffness greater than 40 N/m. 7. The device of claim 1 , wherein the contact element has a stiffness of about 0.05 N/m to about 1000 N/m. 8. The device of claim 1 , wherein the contact element has a stiffness of about 40 N/m to about 1000 s of N/m. 9. The device of claim 1 , wherein the head further comprises a metallic layer on the surface facing the surface of the substrate and an insulating layer on the metallic layer. 10. The device of claim 1 , wherein the cantilever comprises a pair of bimaterial legs, each of the bimaterial legs comprises a stack of at least two materials having different thermal expansion coefficients, the legs providing compensation for ambient temperature changes. 11. The device of claim 1 , wherein the at least one electrical contact comprises a source electrical contact or a drain electrical contact, and further comprising an additional electrical contact comprising the other of the source electrical contact and the drain electrical contract disposed on the surface of the substrate, the at least one electrical contact and the additional electrical contact separated by a gap; and the absorption of the electromagnetic radiation causes the contact element to move toward the source electrical contact and/or the drain electrical contact. 12. The device of claim 1 , wherein the head further comprises a plasmonic absorber that absorbs electromagnetic radiation within a spectral band selected for detection, and the absorption of such electromagnetic radiation causes the contact element to move toward the electrical contact disposed on the surface of the substrate.

Assignees

Inventors

Classifications

  • Transducers for transforming light into mechanical energy or viceversa · CPC title

  • with radiative heat transfer to the switch, e.g. special absorption surfaces · CPC title

  • actuated due to expansion or contraction of a solid (deflection of a bimetallic element H01H37/52) · CPC title

  • Micromechanical thermal relay · CPC title

  • Details · CPC title

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What does patent US11557449B2 cover?
A zero-power plasmonic microelectromechanical system (MEMS) device is capable of specifically sensing electromagnetic radiation and performing signal processing operations. Such devices are highly sensitive relays that consume no more than 10 nW of power, utilizing the energy in detected electromagnetic radiation to detect and discriminate a target without the need of any additional power sourc…
Who is the assignee on this patent?
Univ Northeastern
What technology area does this patent fall under?
Primary CPC classification H01H61/013. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jan 17 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).