Machines and processes for producing polymer films and films produced thereby

Patent metadata

Field	Value
Publication number	US-11552240-B2
Application number	US-201916571794-A
Country	US
Kind code	B2
Filing date	Sep 16, 2019
Priority date	Oct 24, 2017
Publication date	Jan 10, 2023
Grant date	Jan 10, 2023

Abstract

A sensor is disclosed which includes a piezoelectric layer, a piezoresistive layer, one or more electrode layers coupled to the piezoelectric layer and to the piezoresistive layer, the piezoelectric layer configured to provide an electrical signal in response to application of a dynamic disturbance, and the piezoresistive layer configured to provide a change in resistivity in response to application of a static disturbance.

First claim

The invention claimed is:

1. A sensor, comprising:
a piezoelectric layer;
a piezoresistive layer;
one or more electrode layers coupled to the piezoelectric layer and to the piezoresistive layer;
the piezoelectric layer configured to provide an electrical signal in response to application of a dynamic disturbance; and
the piezoresistive layer configured to provide a change in resistivity in response to application of a static disturbance,
Wherein the piezoresistive layer comprises nickel particles aligned by a magnetic field in PDMS.

2. The sensor of claim 1 , wherein the resistivity of the piezoresistive layer change by more than about 105 ohm-cm when a static disturbance of between about 1 to about 3 MPa is applied.

3. The sensor of claim 1 , further comprising a thin film transistor (TFT) layer disposed in the sensor.

4. The sensor of claim 1 , wherein the TFT layer is coupled to the piezoelectric layer.

5. The sensor of claim 4 , the TFT layer includes an energy harvesting circuit configured to convert dynamic disturbance applied to the piezoelectric layer into charge held in a capacitor.

6. The sensor of claim 5 , the energy harvesting circuit includes a diode network disposed in a bridge configuration configured to rectify time varying signal from the piezoelectric layer into a rectified current.

7. The sensor of claim 1 , wherein the nickel particles are in form of powder.

8. The sensor of claim 1 , wherein the nickel particles are in form of flakes.

9. The sensor of claim 1 , the piezoelectric layer comprises vertically aligned lead zirconate titanate (PZT) particles and Graphene Nanoplatelets (GNPs) in a polymer matrix.

10. The sensor of claim 1 , the PZT is aligned via electric field assisted alignment.

Assignees

• Purdue Research Foundation

Inventors

• Cakmak Mukerrem
• Yildirim Armen
• Rahimi Rahim
• Mohammadi Saeed
• Shakouri Ali

Classifications

• G01L1/18

  using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material · CPC title

• G01L9/06

  of piezo-resistive devices · CPC title

• H01L41/1876

  Electricity · mapped topic

• H01L41/0825

  Electricity · mapped topic

• H01L41/1132

  Electricity · mapped topic