Conductive organic semiconductor compound, method for preparing the same and organic thin-film transistor including the same
US-9941476-B2 · Apr 10, 2018 · US
US11545640B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11545640-B2 |
| Application number | US-202117160174-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 27, 2021 |
| Priority date | May 24, 2016 |
| Publication date | Jan 3, 2023 |
| Grant date | Jan 3, 2023 |
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Disclosed are a series of photoisomeric compounds, preparation method therefor and device comprising the compounds, wherein a photoisomeric compound-graphene molecular junction device is formed by linking the photoisomeric compound to a gap of two-dimensional monolayer graphene having a nano-gap array via an amide covalent bond. When a single photoisomeric compound is bridged to the gap of the two-dimensional monolayer graphene having a nano-gap array, the devices have a reversible light-controlled switching function and a reversible electrically-controlled switching function. A molecular switch device prepared by the method can achieve a high reversibility and a good reproducibility. The number of light-controlled switching cycles can exceed 104, and the number of electrically-controlled switching cycles can reach about 105 or greater. Moreover, the above-mentioned reversible molecular switch device remains stable within a period of more than one year. In addition, flexible non-losable organic memory transistor devices and light-responsive organic transistor devices can be constructed using the above-mentioned series of photoisomeric compounds.
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What is claimed is: 1. A diarylethene-graphene molecular junction device, wherein the molecular junction device comprises a diarylethene compound linked to a gap of a two-dimensional monolayer graphene having a nanogap array via an amide covalent bond, wherein the diarylethene compound has any one of the following formulae: wherein C n represents a linear alkylene group having 3-4 carbon atoms, and H of the alkylene group may be substituted with at least one selected from F, Cl, Br or I. 2. The diarylethene-graphene molecular junction device of claim 1 , wherein the diarylethene compound is any one of the following formulae: 3. A reversible molecular switch device or a transistor device comprising the diarylethene-graphene molecular junction device of claim 1 , wherein: (1) the reversible molecular switch device is a reversible light-controlled molecular switch device, wherein the reversible light-controlled molecular switch device exhibits a high conductive state under ultraviolet light; and the reversible light-controlled molecular switch device exhibits a low conductive state under visible light; (2) the reversible molecular switch device is a reversible electrically-controlled molecular switch device comprising a voltage generating means connected to the molecular junction device; wherein the voltage generating means is used to supply: (a) a voltage of 0.9 V to 1.5 V or a voltage of −0.9 V to −1.5 V; or (b) a voltage of −0.9 V to 0.9 V, or a voltage of greater than 1.5 V or less than −1.5 V, across the molecular junction device; provided that the voltage generating means supplies the voltage of 0.9 V to 1.5 V or the voltage of −0.9 V to −1.5 V across the molecular junction device, the reversible electrically-controlled molecular switch device exhibits random switching between a high conductive state and a low conductive state at a temperature of 100 K to 300 K when the electrically-controlled molecular switch device comprises a diarylethene compound of any of Formulae 1-4; and provided that the voltage generating means supplies a voltage of −0.9 V to 0.9 V, or a voltage greater than 1.5 V or less than −1.5 V across both ends of the molecular junction device, the reversible electrically-controlled molecular switch device exhibits a low conductive state in a voltage range of −0.9 V to 0.9 V and a high conductive state in a voltage of greater than 1.5 V or less than −1.5 V at a temperature of 100 K to 300 K when the reversible electrically-controlled molecular switch device comprises a diarylethene compound of any of Formulae 1-4; or (3) the reversible molecular switch device is a reversible temperature-controlled molecular switch device; wherein when the reversible temperature-controlled molecular switch device comprises a diarylethene compound of any of Formulae 1-4, the reversible temperature-controlled molecular switch device exhibits a low conductive state at a temperature below 100 K, and a high conductive state at a temperature above 300 K; or (4) the transistor device comprises the diarylethene-graphene molecular junction device assembled between a dielectric layer and a semiconductor layer of an organic field-effect transistor, or between an electrode and a semiconductor layer of an organic field-effect transistor. 4. The reversible molecular switch device or a transistor device of claim 3 , wherein the reversible light-controlled molecular switch device further includes a visible light generating means and an ultraviolet light generating means, for respectively radiating visible light or ultraviolet light to the reversible light-controlled molecular switch device. 5. The reversible molecular switch device or a transistor device of claim 3 , wherein the diarylethene compound in the reversible electrically-controlled molecular switch device is one of the following formulae: 6. The reversible molecular switch device or a transistor device of claim 3 , wherein the reversible temperature-controlled molecular switch device comprises the diarylethene compound of: 7. The reversible molecular switch device or a transistor device of claim 5 , wherein: (2) the reversible molecular switch device is the reversible electrically-controlled molecular switch device; provided that the voltage generating means supplies the voltage of 0.9 V to 1.5 V or the voltage of −0.9 V to −1.5 V across the molecular junction device, the reversible electrically-controlled molecular switch device exhibits random switching between a high conductive state and a low conductive state at a temperature of 160 K to 220 K when the reversible electrically-controlled molecular switch device comprises the diarylethene compound of Formula I-1 or Formula I-2; and provided that the voltage generating means supplies a voltage of −0.9 V to 0.9 V, or a voltage greater than 1.5 V or less than −1.5 V across both ends of the molecular junction device, the reversible electrically-controlled molecular switch device exhibits a low conductive state in a voltage range of −0.9 V to 0.9 V and a high conductive state in a voltage of greater than 1.5 V or less than −1.5 V at a temperature of 160 to 220 K when the reversible electrically-controlled molecular switch device comprises the diarylethene compound of Formula I-1 or Formula I-2. 8. A reversible temperature-controlled molecular switch device comprising the diarylethene-graphene molecular junction device of claim 2 , wherein when the reversible temperature-controlled molecular switch device comprises the diarylethene compound of Formula I-1 or I-2, the reversible temperature-controlled molecular switch device exhibits a low conductive state at a temperature below 160 K, and exhibits a high conductive state at a temperature above 220 K.
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