Display panel and electronic device

Patent metadata

Field	Value
Publication number	US-11545576-B2
Application number	US-201916624212-A
Country	US
Kind code	B2
Filing date	Dec 6, 2019
Priority date	Nov 26, 2019
Publication date	Jan 3, 2023
Grant date	Jan 3, 2023

Abstract

The present disclosure provides a display panel and an electronic device. The display panel comprises: a substrate, wherein a metal layer and an anti-reflection film are disposed on the substrate, the anti-reflection film is disposed on a light-emitting side of the metal layer, and the anti-reflection film comprises a protective layer and a darkening layer; wherein the protective layer is disposed between the darkening layer and the metal layer, and a material of the darkening layer comprises at least one of MoaXbOc, MoaXbNd, MoaXbOcNd, MoaXbWc, MoaXbCc, or AlaObNc, wherein a, c, and d are rational numbers greater than 0, b is a rational number greater than or equal to 0, and X is at least one of tantalum, vanadium, nickel, niobium, zirconium, tungsten, titanium, rhenium, or hafnium. The display panel and the electronic device of the present disclosure can improve display effect and display quality.

First claim

What is claimed is:

1. A display panel, comprising:
a substrate, wherein a metal layer and an anti-reflection film are disposed on the substrate, the anti-reflection film is disposed on a light-emitting side of the metal layer, and the anti-reflection film comprises a protective layer and a darkening layer;
wherein the protective layer is disposed between the darkening layer and the metal layer, and a material of the darkening layer comprises at least one of MO a X b O c , MO a X b N d , MO a X b O c N d , MO a X b W c , MO a X b C c , or Al a O b N c , wherein a, c, and d are rational numbers greater than 0, b is a rational number greater than or equal to 0, and X is at least one of tantalum, vanadium, nickel, niobium, zirconium, tungsten, titanium, rhenium, or hafnium, and a material of the protective layer comprises at least one of Mo, Ti, Si, SiO x , or SiN x ,
the metal layer comprises a first sub-metal layer and a second sub-metal layer disposed on the first sub-metal layer, the first sub-metal layer comprises a gate electrode, and the second sub-metal layer comprises source and drain electrodes; and
when a light-emitting direction of the display panel follows a first predetermined direction, the anti-reflection film is disposed under the gate electrode and/or the source and drain electrodes.

2. A display panel, comprising:
a substrate, wherein a metal layer and an anti-reflection film are disposed on the substrate, the anti-reflection film is disposed on a light-emitting side of the metal layer, and the anti-reflection film comprises a protective layer and a darkening layer;
wherein the protective layer is disposed between the darkening layer and the metal layer, and a material of the darkening layer comprises at least one of MO a X b O c , MO a X b N d , MO a X b O c N d , MO a X b W c , MO a X b C c , or Al a O b N c , wherein a, c, and d are rational numbers greater than 0, b is a rational number greater than or equal to 0, and X is at least one of tantalum, vanadium, nickel, niobium, zirconium, tungsten, titanium, rhenium, or hafnium.

3. The display panel according to claim 2 , wherein a material of the protective layer comprises at least one of Mo, Ti, Si, SiO x , or SiN x .

4. The display panel according to claim 2 , wherein the metal layer comprises a first sub-metal layer and a second sub-metal layer disposed on the first sub-metal layer, the first sub-metal layer comprises a gate electrode, and the second sub-metal layer comprises source and drain electrodes; and
when a light-emitting direction of the display panel follows a first predetermined direction, the anti-reflection film is disposed under the gate electrode and/or the source and drain electrodes.

5. The display panel according to claim 4 , wherein when a light-emitting direction of the display panel follows a second predetermined direction, the anti-reflection film is disposed on the gate electrode and/or the source and drain electrodes.

6. The display panel according to claim 4 , wherein a thickness of the first sub-metal layer and a thickness of the second sub-metal layer range from 200 nm to 700 nm.

7. The display panel according to claim 2 , wherein a thickness of the darkening layer ranges from 30 nm to 100 nm.

8. The display panel according to claim 2 , wherein a thickness of the protective layer ranges from 1 nm to 50 nm.

9. The display panel according to claim 2 , wherein the display panel is a liquid crystal display panel or an organic light-emitting diode display panel.

10. The display panel according to claim 2 , wherein a material of the metal layer comprises at least one of Cu, Mo, Ti, Al, Ni, Nb, Ta, or Cr.

11. An electronic device, comprising a display panel;
wherein the display panel comprises a substrate, wherein a metal layer and an anti-reflection film are disposed on the substrate, the anti-reflection film is disposed on a light-emitting side of the metal layer, and the anti-reflection film comprises a protective layer and a darkening layer;
wherein the protective layer is disposed between the darkening layer and the metal layer, and a material of the darkening layer comprises at least one of MO a X b O c , MO a X b N d , MO a X b O c N d , MO a X b W c , MO a X b C c , or Al a O b N c , wherein a, c, and d are rational numbers greater than 0, b is a rational number greater than or equal to 0, and X is at least one of tantalum, vanadium, nickel, niobium, zirconium, tungsten, titanium, rhenium, or hafnium.

12. The electronic device according to claim 11 , wherein a material of the protective layer comprises at least one of Mo, Ti, Si, SiO x , or SiN x .

13. The electronic device according to claim 11 , wherein the metal layer comprises a first sub-metal layer and a second sub-metal layer disposed on the first sub-metal layer, the first sub-metal layer comprises a gate electrode, and the second sub-metal layer comprises source and drain electrodes; and
when a light-emitting direction of the display panel follows a first predetermined direction, the anti-reflection film is disposed under the gate electrode and/or the source and drain electrodes.

14. The electronic device according to claim 13 , wherein when a light-emitting direction of the display panel follows a second predetermined direction, the anti-reflection film is disposed on the gate electrode and/or the source and drain electrodes.

15. The electronic device according to claim 13 , wherein a thickness of the first sub-metal layer and a thickness of the second sub-metal layer range from 200 nm to 700 nm.

16. The electronic device according to claim 11 , wherein a thickness of the darkening layer ranges from 30 nm to 100 nm.

17. The electronic device according to claim 11 , wherein a thickness of the protective layer ranges from 1 nm to 50 nm.

18. The electronic device according to claim 11 , wherein the display panel is a liquid crystal display panel or an organic light-emitting diode display panel.

19. The electronic device according to claim 11 , wherein a material of the metal layer comprises at least one of Cu, Mo, Ti, Al, Ni, Nb, Ta, or Cr.

Assignees

• Tcl China Star Optoelectronics Tech Co Ltd

Inventors

• Yu Xiaoping

Classifications

• G02F1/1368

  in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)} · CPC title

• G02F1/136295

  Materials; Compositions; Manufacture processes · CPC title

• G09F9/00 Primary

  Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements (in which the variable information is permanently attached to a movable support G09F11/00; abacus G06C1/00; slide-rules G06G1/00) · CPC title

• G02F1/133502 Primary

  Antiglare, refractive index matching layers · CPC title

• G02B1/113

  using inorganic layer materials only · CPC title