Method for estimating junction temperature online on IGBT power module

Patent metadata

Field	Value
Publication number	US-11543305-B2
Application number	US-201916689111-A
Country	US
Kind code	B2
Filing date	Nov 20, 2019
Priority date	Jan 24, 2019
Publication date	Jan 3, 2023
Grant date	Jan 3, 2023

Abstract

A method for estimating the junction temperature on-line on an insulated gate bipolar transistor (IGBT) power module, including the following steps. Estimate the junction temperature by the temperature sensitive electrical parameter method, set the space thermal model of the extended state, and apply the Kalman filter to the junction temperature estimation. The temperature sensitive electrical parameter method estimates the junction temperature of the IGBT power module in real time, selects the IGBT conduction voltage drop VCE(ON) as the temperature sensitive electrical parameter, and provides a VCE(ON) on-line measuring circuit. The power loss of the diode and IGBT and the estimated value of junction temperature obtained by the temperature sensitive electrical parameter method are taken as the input of the Kalman filter, and measurement noise and process noise are considered to obtain an optimal estimated value of junction temperature.

First claim

What is claimed is:

1. A method for estimating junction temperature on-line on an insulated gate bipolar transistor (IGBT) power module, comprising the following steps executing by a processor:
step 1: performing a control strategy of the IGBT power module and setting up a full-bridge inverter circuit and a V CE(ON) on-line measuring circuit based on a power electronic simulation software Saber, connecting two input terminals of the V CE(ON) on-line measuring circuit to a collector and an emitter of an IGBT of the full-bridge inverter circuit, thereby realizing connection between the full-bridge inverter circuit and the V CE(ON) on-line measuring circuit;
step 2: obtaining IGBT conduction voltage drop V CE(ON) for the connected full-bridge inverter circuit and the V CE(ON) on-line measuring circuit, using a temperature sensitive electrical parameter method to obtain a calibration curve and a fitting relationship of the IGBT conduction voltage drop V CE(ON) and an IGBT power module junction temperature T j ;
step 3: based on the full-bridge inverter circuit set in step 1, setting a behavior model of the IGBT power module composed of an IGBT and a corresponding diode, wherein static and dynamic characteristics of the behavior model are simulated and analyzed to calculate switching loss and conduction loss of the IGBT, reverse recovery loss and conduction loss of the diode;
step 4: considering a coupling effect between the IGBT and the diode in the IGBT power module of step 3, and setting a thermal model of an extended state space of the IGBT power module;
step 5: setting a system model of the Kalman filter, the IGBT power module junction temperature obtained in the step 2, the switching loss and the conduction loss of the IGBT obtained in the step 3, the reverse recovery loss and the conduction loss of the diode obtained in the step 3 are used as filter inputs to calculate an optimal estimated value of the junction temperature;
step 6: employing a physical IGBT power module in a power supplying circuit; and
step 7: modifying an operation of the physical IGBT power module based on the optimal estimated value of the junction temperature.

2. The method for estimating junction temperature on-line on the IGBT power module according to claim 1 , wherein setting the full-bridge inverter circuit in the step 1 comprises following steps executing by the processor:
firstly setting a sinusoidal pulse width modulation (SPWM) control circuit, setting a dead-zone time, and then
setting a gate driving circuit,
wherein the gate driving circuit is modulated by the SPWM control circuit, an input terminal of the gate driving circuit is connected to an output terminal of the SPWM control circuit, and an output terminal of the gate driving circuit is connected to a gate of the IGBT of the IGBT power module; the full-bridge inverter circuit has four bridge arms, each of the bridge arms is composed of one SPWM control circuit, one gate driving circuit, one IGBT and one diode; then the V CE(ON) on-line measuring circuit is set, and finally the two input terminals of the V CE(ON) on-line measuring circuit are connected to the collector and emitter of the IGBT of one of the bridge arms of the full-bridge inverter circuit.

3. The method for estimating junction temperature on-line on the IGBT power module according to claim 1 , wherein monitoring the junction temperature on-line by the temperature sensitive electrical parameter method comprises following steps executing by the processor:
first, placing the IGBT in an incubator, and after the junction temperature of the IGBT power module being stabilized, injecting a small current I C of 100 mA-1A into the collector of the IGBT;
then measuring a saturation conduction voltage drop V CE(ON) of IGBT, changing a temperature of the incubator and repeatedly measuring the saturation conduction voltage drop V CE(ON) of the IGBT in a range of 20° C.-150° C.; and
finally taking the junction temperature T j as a dependent variable, and V CE(ON) as an independent variable, and linearly fitting the V CE(ON) to obtain a fitting relationship T j =f(v CE(ON) ).

4. The method for estimating junction temperature on-line on the IGBT power module according to claim 1 , wherein the switching loss and the conduction loss of the IGBT, the reverse recovery loss and the conduction loss of the diode obtained through the calculation in the step 3 comprise following steps executing by the processor:
using a IGBT Level-1 Tool modeling toolbox in Saber to set a simulation model for a specific structure and process of a device,
thereby accurately representing the static and dynamic characteristics of the device, simulating a dynamic switching process of the IGBT power module, and obtaining a voltage and a current waveform of the IGBT when the IGBT is on and off, and a reverse recovery voltage and a current waveform of the diode, and a voltage and a current waveforms when the IGBT and the diode are turned on;
wherein the loss of the IGBT is calculated as follows:

P

o
⁢
n

=

1

t

o
⁢
n

⁢

∫
0

t

o
⁢
n

v

c
⁢
e

(
r
)

⁢

i
c

(
t
)

⁢
d
⁢
t

⁢

P

o
⁢
f
⁢
f

=

1

t

o
⁢
f
⁢
f

⁢

∫
0

t

o
⁢
f
⁢
f

Assignees

• Univ Wuhan

Inventors

• He Yigang
• Li Kaiwei
• Yuan Weibo
• He Liulu
• Guo Yuzheng
• Zhang Hui

Classifications

• G01K2217/00

  Temperature measurement using electric or magnetic components already present in the system to be measured · CPC title

• G01K7/01 Primary

  using semiconducting elements having PN junctions (G01K7/02, G01K7/16, G01K7/30 take precedence) · CPC title

• G01K7/42

  Circuits effecting compensation of thermal inertia; Circuits for predicting the stationary value of a temperature · CPC title

• G06F17/15

  Correlation function computation {including computation of convolution operations (arithmetic circuits for sum of products per se, e.g. multiply-accumulators G06F7/5443; digital filters, e.g. FIR, IIR, adaptive filters H03H17/00)} · CPC title

• G01K13/00 Primary

  Thermometers specially adapted for specific purposes · CPC title