Position sensing mechanism

US11543267B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11543267-B2
Application numberUS-202117141956-A
CountryUS
Kind codeB2
Filing dateJan 5, 2021
Priority dateJan 5, 2021
Publication dateJan 3, 2023
Grant dateJan 3, 2023

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

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A position sensing mechanism provided by the invention comprises an encoding element as a sensing signal source, a reading element for sensing signals of the signal source, and a processing unit for receiving and analyzing sensing signals output by the reading element, the position sensing mechanism has a main technical feature lying in a magneto-resistive unit in the reading element for sensing signals of the signal source being a tunneling magneto-resistor (TMR), and two layers of magnetic moments of a reference layer and a free layer of the tunneling magneto-resistor being perpendicular to each other, and in the reference layer and the free layer with the magnetic moments being perpendicular to each other, the magnetic moment of one of the layers is parallel to a film surface, and the magnetic moment of the other layer is perpendicular to the film surface.

First claim

Opening claim text (preview).

What is claimed is: 1. A position sensing mechanism comprising: an encoding element having an absolute column magnetic track and an incremental column magnetic track extending side by side with each other along a virtual moving axis; a reading element adjacent to and spaced apart from the encoding element, and changing in position relative to the encoding element on the virtual moving axis, the reading element having a first magneto-resistive unit acted on by the absolute column magnetic track, and a second magneto-resistive unit acted on by the incremental column magnetic track; and a processing unit electrically connected to the reading unit for receiving signals generated by the first magneto-resistive unit and the second magneto-resistive unit under actions of the absolute column magnetic track and the incremental column magnetic track respectively, and analyzing positions with the signals received; characterized in that: the first magneto-resistive unit and the second magneto-resistive unit are tunneling magneto-resistors (TMR) respectively, each said magneto-resistive unit of the first magneto-resistive unit and the second magneto-resistive unit has magnetic moments of a reference layer and a free layer being perpendicular to each other, and in the reference layer and the free layer, the magnetic moment of one of the layers is parallel to a film surface, and the magnetic moment of the other layer is perpendicular to the film surface. 2. The position sensing mechanism as claimed in claim 1 , wherein the encoding element moves relative to the reading element along the virtual moving axis. 3. The position sensing mechanism as claimed in claim 1 , wherein the reading element moves relative to the encoding element along the virtual moving axis. 4. The position sensing mechanism as claimed in claim 1 , wherein the encoding element is in a straight bar shape. 5. The position sensing mechanism as claimed in claim 1 , wherein the encoding element is in an annular shape. 6. The position sensing mechanism as claimed in claim 1 , wherein the magnetic moment perpendicular to the film surface is the reference layer. 7. The position sensing mechanism as claimed in claim 1 , wherein the magnetic moment perpendicular to the film surface is the free layer. 8. The position sensing mechanism as claimed in claim 1 , wherein the reading element further comprises a chip, and the first magneto-resistive unit and the second magneto-resistive unit are respectively formed on the chip. 9. The position sensing mechanism as claimed in claim 1 , wherein the second magneto-resistive unit is a bridge tunneling magneto-resistor (TMR). 10. The position sensing mechanism as claimed in claim 1 , wherein the first magneto-resistive unit has a single magnetic tunneling junction (MTJ).

Assignees

Inventors

Classifications

  • G01D5/2458Primary

    with incremental and absolute tracks on separate encoders · CPC title

  • for measuring position, not involving coordinate determination (coordinate measuring G01B7/004) · CPC title

  • Three-component magnetometers · CPC title

  • G01D5/145Primary

    influenced by the relative movement between the Hall device and magnetic fields (see G01R33/06) · CPC title

  • comprising tunnel junctions, e.g. tunnel magnetoresistance sensors · CPC title

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What does patent US11543267B2 cover?
A position sensing mechanism provided by the invention comprises an encoding element as a sensing signal source, a reading element for sensing signals of the signal source, and a processing unit for receiving and analyzing sensing signals output by the reading element, the position sensing mechanism has a main technical feature lying in a magneto-resistive unit in the reading element for sensin…
Who is the assignee on this patent?
Hiwin Mikrosystem Corp
What technology area does this patent fall under?
Primary CPC classification G01D5/2458. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jan 03 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).