Carbon nanotube field emitter and preparation method thereof
US-10734181-B1 · Aug 4, 2020 · US
Carbon nanotube field emitter and preparation method thereof
US11542163B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11542163-B2 |
| Application number | US-202017080670-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 26, 2020 |
| Priority date | Jul 16, 2019 |
| Publication date | Jan 3, 2023 |
| Grant date | Jan 3, 2023 |
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Abstract
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A carbon nanotube field emitter comprises at least two electrodes and at least one graphitized carbon nanotube structure. The at least one graphitized carbon nanotube structure comprises a first end and a field emission end. The first end is opposite to the field emission end. The first end is fixed between the at least two electrodes, and the field emission end is exposed from the at least two electrodes and configured to emit electrons.
First claim
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What is claimed is: 1. A carbon nanotube field emitter, comprising: at least two electrodes and at least one graphitized carbon nanotube structure, wherein the at least one graphitized carbon nanotube structure comprises a first end and a field emission end, the first end is opposite to the field emission end, the first end is fixed between the at least two electrodes, and the field emission end is exposed from the at least two electrodes and configured to emit electrons, wherein the graphitized carbon nanotube structure comprises a plurality of carbon nanotube drawn films stacked with each other. 2. The carbon nanotube field emitter of claim 1 , wherein a density of the graphitized carbon nanotube structure is larger than or equal to 1.6 g/m 3 . 3. The carbon nanotube field emitter of claim 1 , wherein the field emission end comprises a plurality of protrusions and a plurality of burrs. 4. The carbon nanotube field emitter of claim 1 , wherein an angle between an aligned directions of carbon nanotubes in two adjacent carbon nanotube drawn films ranges from about 0 degrees to about 30 degrees. 5. The carbon nanotube field emitter of claim 1 , wherein the angle between an aligned directions of carbon nanotubes in the two adjacent carbon nanotube drawn films is 0 degrees. 6. The carbon nanotube field emitter of claim 1 , wherein each carbon nanotube drawn film comprises a plurality of carbon nanotubes, and the plurality of carbon nanotubes are arranged parallel to a surface of a carbon nanotube drawn film. 7. The carbon nanotube field emitter of claim 6 , wherein the plurality of carbon nanotubes in in the carbon nanotube drawn film are arranged along a same direction. 8. The carbon nanotube field emitter of claim 7 , wherein an end of one carbon nanotube is joined to another end of an adjacent carbon nanotube arranged along the same direction by Van der Waals attractive force. 9. The carbon nanotube field emitter of claim 1 , wherein the at least one graphitized carbon nanotube structure comprises a plurality of carbon nanotubes, and the plurality of carbon nanotubes extend along a length direction of the field emission end. 10. The carbon nanotube field emitter of claim 1 , wherein the at least two electrodes consists of at least one flattened nickel tube. 11. The carbon nanotube field emitter of claim 1 , wherein the carbon nanotube field emitter comprises a carbon layer, and the carbon layer is uniformly coated on a surface of the at least one graphitized carbon nanotube structure. 12. A carbon nanotube field emitter, comprising: at least two electrodes and at least one graphitized carbon nanotube structure, wherein the at least one graphitized carbon nanotube structure comprises a first end and a field emission end, the first end is opposite to the field emission end, the first end is fixed between the at least two electrodes, the field emission end is exposed from the at least two electrodes and configured to emit electrons, wherein the carbon nanotube field emitter comprises a carbon layer, and the carbon layer is uniformly coated on a surface of the at least one graphitized carbon nanotube structure. 13. A carbon nanotube field emitter, comprising: at least two electrodes and at least one graphitized carbon nanotube structure, wherein the at least one graphitized carbon nanotube structure comprises a first end and a field emission end, the first end is opposite to the field emission end, the first end is fixed between the at least two electrodes, the field emission end is exposed from the at least two electrodes and configured to emit electrons, wherein the at least two electrodes consists of at least one flattened nickel tube.
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- What does patent US11542163B2 cover?
- A carbon nanotube field emitter comprises at least two electrodes and at least one graphitized carbon nanotube structure. The at least one graphitized carbon nanotube structure comprises a first end and a field emission end. The first end is opposite to the field emission end. The first end is fixed between the at least two electrodes, and the field emission end is exposed from the at least two…
- Who is the assignee on this patent?
- Univ Tsinghua, Hon Hai Prec Ind Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H01J1/304. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 03 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).