Optoelectronic semiconductor component

US11538969B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11538969-B2
Application numberUS-201816954472-A
CountryUS
Kind codeB2
Filing dateDec 18, 2018
Priority dateJan 19, 2018
Publication dateDec 27, 2022
Grant dateDec 27, 2022

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

In one embodiment, the optoelectronic semiconductor component comprises at least one semiconductor chip for generating a primary radiation, and also an optical body disposed optically downstream of the semiconductor chip. A reflector surrounds the optical body laterally all around in a positively locking manner and is configured for reflecting the primary radiation and visible light. The optical body has a base surface facing the semiconductor chip and an exit surface facing away from the semiconductor chip. The optical body tapers in a direction away from the semiconductor chip. A quotient of the base surface and a height of the optical body is between 1 mm and 30 mm inclusive.

First claim

Opening claim text (preview).

The invention claimed is: 1. An optoelectronic semiconductor component, comprising: at least one semiconductor chip for generating a primary radiation, a non-imaging optical body which is located optically downstream of the at least one semiconductor chip, wherein the optical body consists of a transparent, clear material for visible light, and a reflector, which laterally encloses the optical body on all sides in a positive-locking manner and is configured for reflecting at least the primary radiation and the visible light, wherein the optical body has a base surface facing the at least one semiconductor chip and an exit surface facing away from the at least one semiconductor chip, the optical body tapers in a direction away from the at least one semiconductor chip, a quotient of an area of the base surface and a height of the optical body is between 1 mm and 30 mm inclusive, at least one fluorescent body is located between the at least one semiconductor chip and the optical body and is configured for converting the primary radiation partially or completely into a longer-wavelength secondary radiation, the base surface completely covers the fluorescent body, and spaces between adjacent semiconductor chips are partially or completely filled with a casting body configured to reflect at least the primary radiation. 2. The optoelectronic semiconductor component as claimed in claim 1 , in which a distance between the fluorescent body and the at least one semiconductor chip and a distance between the fluorescent body and the optical body is in each case no more than 50 μm, and/or these distances are no more than 1% of the height of the optical body. 3. The optoelectronic semiconductor component as claimed in claim 1 , in which a distance between the at least one semiconductor chip and the optical body is no more than 50 μm and the optical body directly optically follows the at least one semiconductor chip, this distance being no more than 1% of the height of the optical body. 4. The optoelectronic semiconductor component as claimed in claim 1 , in which the optical body, viewed in cross-section along a direction away from the at least one semiconductor chip, is shaped in some regions or throughout as a symmetrical trapezium. 5. The optoelectronic semiconductor component as claimed in claim 1 , in which the optical body, viewed in cross-section in a direction away from the at least one semiconductor chip, has a shape of a rectangle or a symmetrical trapezium. 6. The optoelectronic semiconductor component as claimed in claim 1 , in which the optical body, viewed in cross-section along a direction away from the at least one semiconductor chip, is shaped in some regions or throughout as a symmetrical stepped pyramid. 7. The optoelectronic semiconductor component as claimed in claim 1 , in which the optical body, viewed in cross-section, is symmetrically concavely curved. 8. The optoelectronic semiconductor component as claimed in claim 1 , in which the base surface is square or rectangular, whereas the exit surface is circular or elliptical in plan view, wherein the base surface merges into the exit surface in a direction away from the at least one semiconductor chip with a continuously differentiable side face. 9. The optoelectronic semiconductor component as claimed in claim 1 , in which a quotient of the area of the base surface and an area of the exit surface is between 1.5 and 5 inclusive, wherein area of the base surface is between 1 mm 2 and 30 mm 2 inclusive and the height is between 1 mm and 5 mm inclusive. 10. The optoelectronic semiconductor component as claimed in claim 1 , in which the reflector is formed by a casting, which diffusely reflects and appears white to an observer, wherein the casting has a planar form on a reflector upper side facing away from the at least one semiconductor chip and runs parallel to a main side of the at least one semiconductor chip. 11. The optoelectronic semiconductor component as claimed in claim 10 , in which the casting has a minimum thickness of 0.2 mm on the reflector upper side facing away from the at least one semiconductor chip, and the reflector upper side terminates flush with the exit surface. 12. The optoelectronic semiconductor component as claimed in claim 1 , in which the reflector is formed in some places or entirely by a specularly reflective coating on the optical body, wherein the coating is a metal coating of a thickness not exceeding 10 μm. 13. The optoelectronic semiconductor component as claimed in claim 1 , in which the exit surface is provided with a regular geometric structuring to improve light extraction efficiency. 14. The optoelectronic semiconductor component as claimed in claim 1 , in which at least one cavity is formed at some places between the reflector and the optical body. 15. The optoelectronic semiconductor component as claimed in claim 1 , in which the at least one semiconductor chip is mounted on a heat sink and the reflector terminates flush with the heat sink, wherein the semiconductor component is rectangular when viewed in cross-section. 16. The optoelectronic semiconductor component as claimed in claim 1 , in which the base surface is a contiguous, uninterrupted base surface, and a plurality of the semiconductor chips are mounted in a regular pattern on the contiguous, uninterrupted base surface, the optical body being free of a beam guidance device for individual or groups of semiconductor chips. 17. An optoelectronic semiconductor component, comprising: at least one semiconductor chip for generating a primary radiation, a non-imaging optical body which is located optically downstream of the at least one semiconductor chip, wherein the optical body consists of a transparent, clear material for visible light, and a reflector, which laterally encloses the optical body on all sides in a positive-locking manner and is configured for reflecting at least the primary radiation and the visible light, wherein the optical body has a base surface facing the at least one semiconductor chip and an exit surface facing away from the at least one semiconductor chip, the optical body tapers in a direction away from the at least one semiconductor chip, a quotient of an area of the base surface and a height of the optical body is between 1 mm and 30 mm inclusive, at least one fluorescent body is located between the at least one semiconductor chip and the optical body and is configured for converting the primary radiation partially or completely into a longer-wavelength secondary radiation, the base surface completely covers the fluorescent body, and the reflector is formed by a casting, which diffusely reflects and appears white to an observer, and the casting has a planar form on a reflector upper side facing away from the at least one semiconductor chip and runs parallel to a main side of the at least one semiconductor chip. 18. An optoelectronic semiconductor component, comprising: at least one semiconductor chip for generating a primary radiation, a non-imaging optical body which is located optically downstream of the at least one semiconductor chip, wherein the optical body consists of a transparent, clear material for visible light, and a reflector, which laterally encloses the optical body on all sides in a positive-locking manner and is configured for reflecting at least the primary radiation and the visible light, wherein the optical body has a base surface facing the at least one semiconductor chip and

Assignees

Inventors

Classifications

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US11538969B2 cover?
In one embodiment, the optoelectronic semiconductor component comprises at least one semiconductor chip for generating a primary radiation, and also an optical body disposed optically downstream of the semiconductor chip. A reflector surrounds the optical body laterally all around in a positively locking manner and is configured for reflecting the primary radiation and visible light. The optica…
Who is the assignee on this patent?
Osram Oled Gmbh
What technology area does this patent fall under?
Primary CPC classification H01L33/60. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Dec 27 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).