Light emitting diode display panel with one or more encapsulation layers and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-11538876-B2
Application number	US-201916673168-A
Country	US
Kind code	B2
Filing date	Nov 4, 2019
Priority date	Feb 28, 2019
Publication date	Dec 27, 2022
Grant date	Dec 27, 2022

Abstract

The disclosure provides LED display panel and manufacturing method thereof. LED display panel includes: substrate; LED on substrate; pixel defining layer defining pixel opening on substrate, the LED being within pixel opening; and first encapsulation layer on light emitting side of LED. Portion of first encapsulation layer within pixel opening includes sidewall inclined with respect to substrate, surface of sidewall close to LED includes first portions and second portions alternately arranged in direction away from LED and connected to each other, and inclination angles of first portions with respect to substrate are smaller than those of second portions with respect to substrate. Refractive index of material of first encapsulation layer is greater than refractive index of material of each of layer structures directly on both sides of first encapsulation layer in direction perpendicular to substrate.

First claim

The invention claimed is:

1. A light emitting diode display panel comprising:
a substrate;
a light emitting diode on the substrate;
a pixel defining layer on the substrate and defining a pixel opening, the light emitting diode being within the pixel opening; and
a first encapsulation layer on a light emitting side of the light emitting diode;
wherein a portion of the first encapsulation layer within the pixel opening comprises a sidewall inclined with respect to the substrate, a surface of the sidewall facing the light emitting diode comprises a plurality of first portions and a plurality of second portions alternately arranged in a direction away from the light emitting diode and connected to each other, inclination angles of the plurality of first portions with respect to the substrate are smaller than inclination angles of the plurality of second portions with respect to the substrate,
a refractive index of a material of the first encapsulation layer is greater than a refractive index of a material of an immediately physically adjoining layer on top of the first encapsulation layer and a refractive index of a material of an immediately physically adjoining layer on bottom of the first encapsulation layer,
the pixel defining layer comprises a plurality of pixel defining sub-layers stacked in a direction away from the substrate, the pixel opening comprises a plurality of pixel sub-openings respectively penetrating through the plurality of pixel defining sub-layers, and opening areas of the plurality of pixel sub-openings increase in the direction away from the substrate, and
a material of each pixel defining sub-layer comprises a negative photoresist containing a photosensitizer, and a pixel defining sub-layer farther away from the substrate has a higher photosensitizer content.

2. The light emitting diode display panel of claim 1 , wherein the plurality of first portions are parallel to the substrate.

3. The light emitting diode display panel of claim 2 , wherein the inclination angles of the plurality of second portions with respect to the substrate increase in the direction away from the light emitting diode.

4. The light emitting diode display panel of claim 1 , wherein inclination angles of sides of the plurality of pixel sub-openings with respect to the substrate increase in the direction away from the substrate.

5. The light emitting diode display panel of claim 1 , wherein the pixel defining layer comprises three pixel defining sub-layers, a photosensitizer content in a pixel defining sub-layer closest to the substrate is 1.5 wt % to 2.5 wt %, a photosensitizer content in a pixel defining sub-layer farthest from the substrate is 4 wt % to 5 wt %, and a photosensitizer content in a pixel defining sub-layer in the middle of the three pixel defining sub-layers is 2.8 wt % to 3.8 wt %.

6. The light emitting diode display panel of claim 1 , wherein the first encapsulation layer is made of an inorganic material.

7. The light emitting diode display panel of claim 6 , further comprising a second encapsulation layer directly on a side of the first encapsulation layer away from the light emitting diode, the second encapsulation layer is made of an organic material, and a refractive index of the first encapsulation layer is greater than a refractive index of the second encapsulation layer.

8. The light emitting diode display panel of claim 1 , wherein the light emitting diode comprises a first electrode, the first encapsulation layer is directly on the first electrode, and the first electrode is conformal with the first encapsulation layer.

9. The light emitting diode display panel of claim 8 , wherein the first electrode is a transparent electrode.

10. The light emitting diode display panel of claim 1 , wherein the first encapsulation layer is uniform in thickness.

11. The light emitting diode display panel of claim 1 , further comprising a driver circuit layer between the substrate and the pixel defining layer and configured to drive the light emitting diode to emit light.

12. A method for manufacturing a light emitting diode display panel, comprising:
providing a substrate;
forming a pixel defining layer on the substrate, the pixel defining layer defining a pixel opening;
forming a light emitting diode on the substrate, the light emitting diode being formed within the pixel opening;
forming a first encapsulation layer on a light emitting side of the light emitting diode such that a portion of the first encapsulation layer within the pixel opening comprises a sidewall inclined with respect to the substrate, a surface of the sidewall facing the light emitting diode comprises a plurality of first portions and a plurality of second portions alternately arranged in a direction away from the light emitting diode and connected to each other, inclination angles of the plurality of first portions with respect to the substrate are smaller than inclination angles of the plurality of second portions with respect to the substrate,
wherein a refractive index of a material of the first encapsulation layer is greater than a refractive index of a material of an immediately physically adjoining layer on top of the first encapsulation layer and a refractive index of a material of an immediately physically adjoining layer on bottom of the first encapsulation layer,
forming the pixel defining layer comprises: forming a plurality of pixel defining sub-layers which are stacked in a direction away from the substrate, the pixel opening comprises a plurality of pixel sub-openings respectively penetrating through the plurality of pixel defining sub-layers, and opening areas of the plurality of pixel sub-openings increase in the direction away from the substrate, and
a material of each pixel defining sub-layer comprises a negative photoresist containing a photosensitizer, and a pixel defining sub-layer farther away from the substrate has a higher photosensitizer content.

13. The method of claim 12 , wherein the plurality of first portions are formed to be parallel to the substrate.

14. The method of claim 13 , wherein the inclination angles of the plurality of second portions with respect to the substrate increase in the direction away from the light emitting diode.

15. The method of claim 12 , wherein inclination angles of sides of the plurality of pixel sub-openings with respect to the substrate increase in the direction away from the substrate.

16. The method of claim 15 , wherein forming the pixel defining layer comprises: sequentially forming a plurality of pixel defining material layers, wherein a material of each pixel defining material layer comprises a negative photoresist and a photosensitizer, and a pixel defining material layer farther away from the substrate has a higher photosensitizer content;
exposing a stacked structure formed by the plurality of pixel defining material layers by using a same mask;
developing the stacked structure to obtain the pixel opening, wherein the pixel opening comprises a plurality of pixel sub-openings which sequentially penetrate through the plurality of pixel defining material layers, and among the plurality of pixel sub-openings, a pixel sub-opening which is farther away from the substrate has a greater opening area.

17. The method of claim 16 , wherein in sequentially forming the plurality of pixel defining material layers, three pixel defining material layers are formed, wherein a photosensitizer content in a pixel defining material layer closest to the substrate is 1.5 wt % to 2.5 wt %, a photosensitizer content in a pixel defining material layer f

Assignees

• Hefei Xinsheng Optoelectronics Technology Co Ltd
• Boe Technology Group Co Ltd

Inventors

• Cao Binbin

Classifications

• H01L51/0018

  Electricity · mapped topic

• H01L2227/323

  Electricity · mapped topic

• H01L51/5253

  Electricity · mapped topic

• H01L27/3246 Primary

  Electricity · mapped topic

• H01L51/56

  Electricity · mapped topic