Method for growing a transition metal dichalcogenide layer, transition metal dichalcogenide growth device, and method for forming a semiconductor device

Patent metadata

Field	Value
Publication number	US-11538682-B2
Application number	US-201816761054-A
Country	US
Kind code	B2
Filing date	Oct 16, 2018
Priority date	Nov 7, 2017
Publication date	Dec 27, 2022
Grant date	Dec 27, 2022

Abstract

A method for growing a transition metal dichalcogenide layer involves arranging a substrate having a first transition metal contained pad is arranged in a chemical vapor deposition chamber. A chalcogen contained precursor is arranged upstream of the substrate in the chemical vapor deposition chamber. The chemical vapor deposition chamber is heated for a period of time during which a transition metal dichalcogenides layer, containing transition metal from the first transition metal contained pad and chalcogen from the chalcogen contained precursor, is formed in an area adjacent to the first transition metal contained pad.

First claim

What is claimed is:

1. A method for growing a transition metal dichalcogenide layer, the method comprising:
arranging a substrate, which includes a first area having a first transition metal contained pad, in a chemical vapor deposition chamber, the substrate also having a second area free of a transition metal, adjacent to the first transition metal contained pad;
arranging a chalcogen contained precursor upstream of the substrate in the chemical vapor deposition chamber; and
heating the chemical vapor deposition chamber for a period of time during which a transition metal dichalcogenides layer, containing transition metal from the first transition metal contained pad and chalcogen from the chalcogen contained precursor, is formed in the second area, adjacent to the first transition metal contained pad.

2. The method of claim 1 , wherein
the substrate includes a second transition metal contained pad,
the first transition metal contained pad comprises a first transition metal,
the second transition metal contained pad comprises a second transition metal, and
the transition metal dichalcogenides layer forms a heterojunction of a first transition metal dichalcogenide containing the first transition metal from the first transition metal contained pad and a second transition metal dichalcogenide containing the second transition metal from the second transition metal contained pad.

3. The method of claim 2 , wherein the heating of the chemical vapor deposition chamber causes an alloy region to form between the first and second transition metal dichalcogenides.

4. The method of claim 2 , further comprising:
modulating the heating the chemical vapor deposition chamber between a first temperature to form the first transition metal dichalcogenide and a second temperature to form the second transition metal dichalcogenide.

5. The method of claim 4 , further comprising:
simultaneously growing the first transition metal dichalcogenide and the second transition metal dichalcogenide in a chemical vapor deposition process.

6. The method of claim 1 , wherein
the substrate includes a second transition metal contained pad and a third transition metal contained pad arranged upstream of the first and second transition metal contained pads,
the first transition metal contained pad comprises a first transition metal,
the second and third transition metal contained pads comprise a second transition metal, and
the transition metal dichalcogenides layer includes a first layer of a first transition metal dichalcogenide formed from the second transition metal of the second and third transition metal contained pads and a second layer of second transition metal dichalcogenide formed from the first transition metal of the first transition metal contained pad, and the second layer of the second transition metal dichalcogenide is arranged on top of the first layer of the first transition metal dichalcogenide.

7. The method of claim 6 , further comprising:
heating the chemical vapor deposition chamber to a first temperature to form the first transition metal dichalcogenide and then heating the chemical vapor deposition chamber to a second temperature, which is higher than the first temperature, to form the second transition metal dichalcogenide.

8. The method of claim 1 , wherein
the substrate includes second, third and fourth transition metal contained pads,
the first and second transition metal contained pads comprise a first transition metal and are adjacent to each other,
the third and fourth transition metal contained pads comprise a second transition metal and are adjacent to each other, and
the second transition metal contained pad is adjacent to the third transition metal contained pad.

9. The method of claim 8 , further comprising:
heating the chemical vapor deposition chamber at a first temperature to form the first transition metal dichalcogenide between the first and second transition metal contained pads, and
heating the chemical vapor deposition chamber at a second temperature, which is higher than the first temperature, to form the second transition metal dichalcogenide between the third and fourth transition metal contained pads.

10. The method of claim 9 , wherein a transition metal dichalcogenide is formed between the second and third transition metal contained pads, the method further comprising:
removing the transition metal dichalcogenide formed between the second and third transition metal contained pads.

11. The method of claim 1 , wherein the first transition metal contained pad is oxidized
prior to arranging the substrate in the chemical vapor deposition chamber, or
after the substrate with the first transition metal pad is arranged in the chemical vapor deposition chamber but prior to the period of time during which the chemical vapor deposition chamber is heated to form the transition metal dichalcogenides layer.

12. A transition metal dichalcogenide growth device, comprising:
a substrate having first and second areas, adjacent to each other;
a transition metal contained pad arranged on the first area of the substrate; and
a transition metal dichalcogenide layer containing a transition metal from the transition metal contained pad, the transition metal dichalcogenide layer being arranged on the second area of the substrate, adjacent to the transition metal contained pad.

13. The transition metal dichalcogenide growth device of claim 12 , further comprising:
an additional transition metal contained pad,
wherein the transition metal contained pad and the additional transition metal contained pad comprise a first transition metal.

14. The transition metal dichalcogenide growth device of claim 12 , further comprising:
an additional transition metal contained pad,
wherein the transition metal contained pad corn prises a first transition metal and the additional transition metal contained pad comprises a second transition metal, wherein the transition metal dichalcogenide layer is a heterojunction.

15. The transition metal dichalcogenide growth device of claim 12 , further comprising:
an additional transition metal contained pad,
a third transition metal contained pad arranged on the substrate adjacent to the additional transition metal contained pad;
a fourth transition metal contained pad arranged on the substrate adjacent to the third transition metal contained pad,
wherein the transition metal contained pad and the additional transition metal contained pad comprise a first transition metal and the third and fourth transition metal contained pads comprise a second transition metal.

16. A method for forming a semiconductor device, the method comprising:
growing a transition metal dichalcogenide layer by
arranging a substrate, which includes a first area having a first transition metal contained pad in a chemical vapor deposition chamber, the substrate also having a second area free of a transition metal, adjacent to the first transition metal contained pad;
arranging a chalcogen contained precursor upstream of the substrate in the chemical vapor deposition chamber; and
heating the chemical vapor deposition chamber for a period of time during which a transition metal dichalcogenides layer, containing transition metal from the first transition metal contained pad, is formed in the second area, adjacent to the first transition metal contained pad; and

forming a remaining portion of the semiconductor device outside of the chemical vapor deposition chamber using a complementary metal oxide semiconductor process.

17. The method of

Assignees

• Univ King Abdullah Sci & Tech

Inventors

• Chiu Ming-Hui
• Tang Hao-Ling
• Li Lain-Jong

Classifications

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H10P14/3436 Primary

  being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title

• C23C14/0629 Primary

  of zinc, cadmium or mercury · CPC title

• C23C16/04

  Coating on selected surface areas, e.g. using masks · CPC title

• C23C16/305

  Sulfides, selenides, or tellurides · CPC title