System and method for loading an ion trap

Patent metadata

Field	Value
Publication number	US-11538674-B2
Application number	US-202016950703-A
Country	US
Kind code	B2
Filing date	Nov 17, 2020
Priority date	Mar 19, 2018
Publication date	Dec 27, 2022
Grant date	Dec 27, 2022

Abstract

Systems and methods for loading microfabricated ion traps are disclosed. Photo-ablation via an ablation pulse is used to generate a flow of atoms from a source material, where the flow is predominantly populated with neutral atoms. As the neutral atoms flow toward the ion trap, two-photon photo-ionization is used to selectively ionize a specific isotope contained in the atom flow. The velocity of the liberated atoms, atom-generation rate, and/or heat load of the source material is controlled by controlling the fluence of the ablation pulse to provide high ion-trapping probability while simultaneously mitigating generation of heat in the ion-trapping system that can preclude cryogenic operation. In some embodiments, the source material is held within an ablation oven comprising an electrically conductive housing that is configured to restrict the flow of agglomerated neutral atoms generated during photo-ablation toward the ion trap.

First claim

What is claimed is:

1. An ion-trap system comprising:
an ion trap, wherein the ion trap is a microfabricated surface-electrode ion trap comprising a substrate and a plurality of electrodes disposed on the substrate, wherein the plurality of electrodes defines a trapping region having a trapping-region depth;
a photo-ablation system comprising:
(i) an ablation oven for holding a source material comprising atoms characterized by a first mass and being characterized by a plurality of isotopes that includes a first isotope having a first characteristic resonant frequency, wherein the ablation oven comprises a housing that defines a chamber, and wherein the housing includes at least one sidewall and is configured to hold the source material within the chamber and inhibit propagation of residue generated at the ablation oven to the ion trap; and
(ii) an ablation laser that is configured to provide an ablation pulse to the source material to generate an atom flow that includes a plurality of neutral atoms;
wherein the housing is electrically grounded to enable ions in the atom flow to be attracted to the at least one sidewall; and

a photo-ionization (PI) system configured to (1) enable excitation of a first neutral atom of the plurality thereof to a first excited state with a first photon and (2) enable excitation of the first neutral atom from the first excited state to the continuum with a second photon;
wherein the ablation laser is configured such that the ablation pulse has a fluence that gives rise to greater than a 50% probability of trapping the first ion in the ion trap.

2. The system of claim 1 wherein the PI system includes:
a first photo-ionization (PI) laser configured to provide the first photon, the first PI laser having a frequency that is equal to the first characteristic frequency; and
a second PI laser configured to provide the second photon.

3. The system of claim 1 wherein the PI system includes a PI laser that is configured to provide each of the first and second photons.

4. The system of claim 1 wherein the ablation oven is configured such that it comprises an aperture that enables optical and fluidic access to the chamber.

5. The system of claim 4 wherein the housing is configured to restrict the flow of agglomerated neutral atoms toward the trapping region.

6. The system of claim 1 wherein the source material is characterized by a second fluence at which plasma generation at the source material is enabled, and wherein the first fluence is less than the second fluence.

7. A method for trapping an ion, the method comprising:
locating a source material within a chamber of a housing of an ablation oven, the housing being electrically grounded;
photo-ablating an atom flow from the source material with an ablation pulse having a fluence that is controlled, wherein the fluence is sufficient to generate the atom flow without inducing a plasma discharge;
exciting a first neutral atom of the atom flow to a first excited state with a first photon;
ionizing the first neutral atom to create the ion by exciting the first neutral atom from the first excited state to the continuum with a second photon; and
trapping the ion in an ion trap that is a microfabricated surface-electrode ion trap comprising a substrate and a plurality of electrodes disposed on the substrate, wherein the plurality of electrodes defines a trapping region;
wherein the fluence is controlled to yield a greater than 50% probability of trapping the ion in the ion trap.

8. The method of claim 7 further comprising:
providing the source material such that it is characterized by a plurality of isotopes that includes a first isotope having a resonant dipole transition characterized by a first resonant frequency;
providing the first photon as part of a first laser signal that frequency stabilized at the first resonant frequency; and
providing the second photon as part of a second laser signal.

9. The method of claim 7 further comprising:
providing the first photon as part of a first laser signal that is suitable for driving a first transition that excites the neutral atom to the first excited state, wherein the first excited state is equal to or greater than 50% and less than 100% of the energy required to excite the first neutral atom to the continuum; and
providing the second photon as part of the first laser signal.

10. The method of claim 7 further comprising controlling the fluence of the ablation pulse to control at least one of: the velocity of the first neutral atom, the rate of ablation of the source material, and the heat load at the source material.

11. The method of claim 7 further comprising providing a first photo-ionization (PI) laser signal that includes the first photon, and providing the first PI laser signal such that the first neutral atom undergoes a plurality of photon absorption-emission cycles during exposure of the first neutral atom to the first PI laser signal.

12. The method of claim 11 further comprising providing a second PI laser signal that includes the second photon, and providing the second PI laser signal such that the first neutral atom undergoes a plurality of photon absorption-emission cycles during exposure of the first neutral atom to the second PI laser signal.

13. The method of claim 7 further comprising locating the source material in an ablation oven that includes a housing that is configured to restrict the flow of agglomerated neutral atoms toward the trapping region.

14. The method of claim 13 further comprising locating the ablation oven such that the ablation oven and the trapping region are on the same side of the ion trap.

15. A method for trapping an ion, the method comprising:
locating a source material within a chamber of a housing of an ablation oven, the housing having at least one sidewall;
electrically grounding the at least one sidewall;
generating an atom flow including at least one neutral atom from a source material with an ablation pulse having a fluence that it is sufficient to photo-ablate the at least one neutral atom from the source material without inducing a plasma discharge, wherein the at least one neutral atom is characterized by a first mass;
controlling the fluence to control the velocity of the at least one neutral atom within a desired range that is less than or equal to a cutoff velocity that is based on a trapping-region depth and the first mass;
exciting a first neutral atom of the atom flow to a first excited state with a first photon;
ionizing the first neutral atom to create the ion by exciting the first neutral atom from the first excited state to the continuum with a second photon; and
trapping the ion in an ion trap that is a microfabricated surface-electrode ion trap comprising a substrate and a plurality of electrodes disposed on the substrate, wherein the plurality of electrodes defines a trapping region characterized by the trapping-region depth.

16. The method of claim 15 wherein the housing is configured to restrict the flow of agglomerated neutral atoms toward the trapping region.

17. The method of claim 16 further comprising locating the ablation oven such that the ablation oven and the trapping region are on the same side of the ion trap.

18. The method of claim 15 further comprising:
providing the source material such that it is characterized by a plurality of isotopes that includes a first isotope having a resonant dipole transition characterized by a first resonant frequency;
providing the first photon as part of a first laser signal that frequency

Assignees

• Univ Duke

Inventors

• Vrijsen Geert
• Kim Jungsang
• Spivey Robert
• Inlek Ismail
• Aikyo Yuhi

Classifications

• H01J49/422

  Two-dimensional RF ion traps (ion guides without mass selection H01J49/062) · CPC title

• H01J49/162

  Direct photo-ionisation, e.g. single photon or multi-photon ionisation · CPC title

• H01J49/0018 Primary

  Microminiaturised spectrometers, e.g. chip-integrated devices, Micro-Electro-Mechanical Systems [MEMS] · CPC title

• H01J49/161

  using photoionisation, e.g. by laser · CPC title

• H01J49/0463

  Desorption by laser or particle beam, followed by ionisation as a separate step (sample holder per se H01J49/0418) · CPC title