Microstructured crystalline device in confined space, a dye-sensitized solar cell, and method of preparation thereof
US-9443662-B2 · Sep 13, 2016 · US
US11535947B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11535947-B2 |
| Application number | US-202217568621-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 4, 2022 |
| Priority date | Jul 11, 2017 |
| Publication date | Dec 27, 2022 |
| Grant date | Dec 27, 2022 |
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A hydrogen evolution assisted electroplating nozzle includes a nozzle tip configured to interface with a portion of a substructure. The nozzle also includes an inner coaxial tube connected to a reservoir containing an electrolyte and an anode, the inner coaxial tube configured to dispense the electrolyte through the nozzle tip onto the portion of the substructure. The nozzle also includes an outer coaxial tube encompassing the inner coaxial tube, the outer coaxial tube configured to extract the electrolyte from the portion of the substructure. The nozzle also includes at least one contact pin configured to make electrical contact with a conductive track on the substrate.
Opening claim text (preview).
What is claimed is: 1. A method of localized electroplating using a hydrogen evolution assisted electroplating nozzle comprising two contact pins, the method comprising: printing a conductive track on a substructure; positioning a tip of the hydrogen evolution assisted electroplating nozzle at a predetermined distance above the substructure, wherein the predetermined distance ensures at least one contact pin of the two contact pins of the hydrogen evolution assisted electroplating nozzle makes electrical contact with the conductive track; applying, with the hydrogen evolution assisted electroplating nozzle, a predetermined voltage between the two contact pins of the hydrogen evolution assisted electroplating nozzle such that a potential profile is generated along the conductive track to grow a metal on the conductive track; moving the hydrogen evolution assisted electroplating nozzle along the conductive track to metallize the conductive track; placing a surface mount electronic device (SMD) having a terminal on the substructure; positioning a tip of the hydrogen evolution assisted electroplating nozzle above a gap between the conductive track and the terminal of the SMD and at the predetermined distance above the substructure, wherein the predetermined distance ensures that a first contact pin of the two contact pins makes electrical contact with the conductive track; and applying, with the hydrogen evolution assisted electroplating nozzle, a predetermined voltage via at least the first contact pin to grow a metal between the conductive track and the terminal of the SMD. 2. The method of claim 1 , wherein generating the potential profile along the conductive track increases a growth rate of the metal on the conductive track. 3. The method of claim 1 , wherein positioning the tip at the predetermined distance includes electrically contacting the two pins of the hydrogen evolution assisted electroplating nozzle with the conductive track. 4. The method of claim 3 , further comprising sensing a quality of an electroplated area based on a resistance between the two pins of the hydrogen evolution assisted electroplating nozzle. 5. The method of claim 4 , further comprising adjusting a speed of movement of the hydrogen evolution assisted electroplating nozzle based on the sensed quality of the electroplated area. 6. The method of claim 5 , further comprising adjusting a speed of movement of the hydrogen evolution assisted electroplating nozzle based on the sensed quality of a soldering joint. 7. The method of claim 1 , wherein the substructure is a 3D printed structure that was constructed by printing different layers on top of each other, and the substructure comprises a filament material of acrylonitrile butadiene styrene (ABS) or polylactic acid (PLA). 8. The method of claim 1 , the method further comprising making electrical contact between a second contact pin of the two contact pins and the terminal of the SMD when applying the predetermined voltage. 9. The method of claim 1 , wherein the substructure includes a cavity, and wherein placing the SMD on the structure includes placing the SMD within the cavity. 10. The method of claim 1 , wherein the conductive track is a carbon based track. 11. The method of claim 10 , wherein the carbon based track is printed on the substructure. 12. The method of claim 1 , wherein the conductive track is a copper track. 13. The method of claim 1 , wherein each of the two contact pins is connected to the nozzle via a spring positioned within a tube guide, and a long axis of the tube guide is parallel to a long axis of an outer tube of the hydrogen evolution assisted electroplating nozzle. 14. The method of claim 1 , wherein each contact pin of the two contact pins acts as a cathode when both contact pins are in electrical contact with the conductive track. 15. The method of claim 1 , wherein moving the hydrogen evolution assisted electroplating nozzle along the conductive track causes the position of the two contact pins to move along the conductive track. 16. The method of claim 1 , wherein the two contact pins are equally distributed about the nozzle tip.
Electroplating with moving electrolyte e.g. jet electroplating {(using locally applied jets of electrolyte C25D5/026)} · CPC title
by welding · CPC title
Carbon · CPC title
characterised by the electroplating method; means therefor, e.g. baths or apparatus · CPC title
Electrodes {, e.g. composition, counter electrode} · CPC title
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