Light-emitting diode and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-11532769-B2
Application number	US-202016931056-A
Country	US
Kind code	B2
Filing date	Jul 16, 2020
Priority date	Jan 19, 2018
Publication date	Dec 20, 2022
Grant date	Dec 20, 2022

Abstract

Disclosed is a light-emitting diode which includes a light-emitting epitaxial layered unit, an insulation layer, a transparent conductive layer, a protective layer, a first electrode, and a second electrode. The light-emitting epitaxial layered unit includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between the first and second semiconductor layers, and has a first electrode region which includes a pad area and an extension area. The insulation layer is disposed on the first semiconductor layer and at the extension area of the first electrode region. Also disclosed is a method for manufacturing the light-emitting diode.

First claim

What is claimed is:

1. A light-emitting diode, comprising:
a light-emitting epitaxial layered unit which includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between said first and second semiconductor layers, and which has a top surface including a first electrode region that includes a pad area and an extension area;
an insulation layer disposed on said first semiconductor layer and at said extension area of said first electrode region;
a transparent conductive layer disposed on said first semiconductor layer and covering said insulation layer;
a protective layer disposed on said transparent conductive layer and having a plurality of first holes formed above and along said extension area of said first electrode region to permit said transparent conductive layer to be exposed;
a first electrode which is disposed on said protective layer, and which includes a pad portion and an extension portion, said extension portion filling said first holes so as to electrically connect said transparent conductive layer; and
a second electrode electrically connected to said second semiconductor layer and spaced apart from said first electrode,
wherein a part of said pad portion of said first electrode is in direct contact with a portion of said first semiconductor layer at said pad area of said first electrode region.

2. The light-emitting diode according to claim 1 , wherein each of said insulation layer and said protective layer has a thickness which is determined according to an equation of:
d =(2 k+ 1)Λ/4 n,

wherein
d is a thickness of each of said insulation layer and said protective layer,
k is a natural number of at least 0,
Λ is a wavelength of light emitted from said light-emitting layer, and
n is a refractive index of each of said insulation layer and said protective layer.

3. The light-emitting diode according to claim 1 , wherein said insulation layer includes a plurality of insulation blocks spaced apart from one another.

4. The light-emitting diode according to claim 3 , wherein said insulation blocks of said insulation layer are in positions corresponding to those of said first holes of said protective layer, respectively, and each of said insulation blocks of said insulation layer has a cross-sectional area smaller than a size of a corresponding one of said first holes of said protective layer.

5. The light-emitting diode according to claim 4 , wherein said transparent conductive layer covers said insulation blocks of said insulation layer, and said transparent conductive layer and said protective layer define therebetween a plurality of clearances which are in positions corresponding to those of said first holes, respectively to permit said first electrode to be filled.

6. The light-emitting diode according to claim 3 , wherein each of said insulation blocks of said insulation layer is disposed below a corresponding one of said first holes of said protective layer, and has a cross-sectional area larger than a size of a corresponding one of said first holes of said protective layer.

7. The light-emitting diode according to claim 3 , wherein a proximate one of said insulation blocks relative to said pad area of said first electrode region have a cross-sectional area larger than that of a distal one of said insulation blocks relative to said pad area of said first electrode region.

8. The light-emitting diode according to claim 3 , wherein proximate ones of said insulation blocks relative to said pad area of said first electrode region are arranged more densely than distal ones of said insulation blocks relative to said pad area of said first electrode region.

9. The light-emitting diode according to claim 1 , wherein said pad area of said first electrode region includes a central portion, and a part of said pad portion of said first electrode is in direct contact with a portion of said first semiconductor layer at said central portion of said pad area of said first electrode region.

10. The light-emitting diode according to claim 9 , wherein said insulation layer is further disposed at said pad area of said first electrode region.

11. The light-emitting diode according to claim 1 , wherein said protective layer further has a second hole disposed above said first semiconductor layer at said pad area of said first electrode region.

12. The light-emitting diode according to claim 11 , wherein said second hole has an annular geometry.

13. The light-emitting diode according to claim 11 , wherein said transparent conductive layer has a third hole disposed above said pad area of said first electrode region, and said first electrode fills said second hole of said protective layer and said third hole of said transparent conductive layer so as to permit said first electrode to be in direct contact with the portion of said first semiconductor layer at said pad area of said first electrode region.

14. The light-emitting diode according to claim 11 , wherein said second hole includes at least one hole-protruding portion that protrudes radially and outwardly.

15. The light-emitting diode according to claim 1 , wherein said insulation layer is further disposed on said first semiconductor layer at said pad area of said first electrode region, said insulation layer at said pad area of said first electrode region including a plurality of insulation blocks which are arranged to surround a center of said pad area of said first electrode region and which are angularly spaced apart from one another.

16. The light-emitting diode according to claim 15 , wherein two adjacent ones of said insulation blocks at said pad area of said first electrode region define therebetween a clearance, and said first electrode further includes an interconnecting portion which interconnects said pad portion and said extension portion and which is disposed in a position above a corresponding one of said clearances.

17. The light-emitting diode according to claim 15 , wherein said protective layer further has a second hole disposed above said first semiconductor layer at said pad area of said first electrode region, said second hole including at least one hole-protruding portion that protrudes radially and outwardly.

18. The light-emitting diode according to claim 17 , wherein said second hole includes a plurality of said hole-protruding portions respectively aligned with said insulation blocks at said pad area of said first electrode region.

19. The light-emitting diode according to claim 17 , wherein said second hole includes a plurality of said hole-protruding portions which are staggered from said insulation blocks disposed at said pad area of said first electrode region.

20. The light-emitting diode according to claim 1 , wherein said top surface of said light-emitting epitaxial layered unit further includes a second electrode region on which said second electrode is disposed, said second electrode region including a mesa portion at which said second semiconductor layer is exposed, said protective layer covering said mesa portion and further having a fourth hole to permit a part of said second semiconductor layer to expose.

21. The light-emitting diode according to claim 20 , wherein said insulation layer is further disposed on said pad area of said second electrode region and is sandwiched between said protective layer and said second semiconductor layer.

22. The light-emitting diode according to claim 1 , wherein said top surface of said light-em

Assignees

• Xiamen Sanan Optoelectronics Technology Co Ltd

Inventors

• Lin Su-Hui
• Wang Feng
• Hong ling-yuan
• Hsu Sheng-Hsien
• Chen Sihe
• Chen Dazhong
• Peng Kang-Wei
• Chang Chia-Hung

Classifications

• H01L33/46 Primary

  Electricity · mapped topic

• H01L33/405

  Electricity · mapped topic

• H01L2933/0025

  Electricity · mapped topic

• H01L33/382

  Electricity · mapped topic

• H01L33/145

  Electricity · mapped topic