Infrared stealth cloth and infrared stealth clothes based on carbon nanotube

US11530512B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11530512-B2
Application numberUS-202016901225-A
CountryUS
Kind codeB2
Filing dateJun 15, 2020
Priority dateDec 25, 2019
Publication dateDec 20, 2022
Grant dateDec 20, 2022

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  1. Title

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  2. Abstract

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  4. Key dates

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  5. First independent claim

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Abstract

Official abstract text for this publication.

An infrared stealth cloth includes a cloth substrate and an infrared light absorber located on the cloth substrate. The infrared light absorber includes a first drawn carbon nanotube film, a second drawn carbon nanotube film, and a third drawn carbon nanotube film stacked on each other. The first drawn carbon nanotube film includes a plurality of first carbon nanotubes substantially extending along a first direction. The second drawn carbon nanotube film includes a plurality of second carbon nanotubes substantially extending along a second direction. The third drawn carbon nanotube film includes a plurality of third carbon nanotubes substantially extending along a third direction. The first direction and the second direction form an angle of about 42 degrees to about 48 degrees, and the first direction and the third direction form an angle of about 84 degrees to about 96 degrees.

First claim

Opening claim text (preview).

What is claimed is: 1. An infrared stealth cloth, comprising: a cloth substrate; and an infrared light absorber located on the cloth substrate; wherein the infrared light absorber comprises a carbon nanotube structure, and an absorptivity of the carbon nanotube structure in a wavelength range from about 250 nm to about 2 μm is greater than or equal to 98.85%; and the carbon nanotube structure comprises: a first drawn carbon nanotube film comprising a plurality of first carbon nanotubes joined end-to-end by van der Waals attractive force and substantially extending along a first direction; a second drawn carbon nanotube film comprising a plurality of second carbon nanotubes joined end-to-end by van der Waals attractive force and substantially extending along a second direction; and a third drawn carbon nanotube film comprising a plurality of third carbon nanotubes joined end-to-end by van der Waals attractive force and substantially extending along a third direction; wherein the first drawn carbon nanotube film, the second drawn carbon nanotube film, and the third drawn carbon nanotube film are stacked on each other; and the first direction and the second direction form an angle of about 42 degrees to about 48 degrees, and the first direction and the third direction form an angle of about 84 degrees to about 96 degrees. 2. The infrared stealth cloth of claim 1 , wherein the plurality of first carbon nanotubes is joined end-to-end along a length extending direction of the plurality of first carbon nanotubes. 3. The infrared stealth cloth of claim 1 , wherein the plurality of second carbon nanotubes is joined end-to-end along a length extending direction of the plurality of second carbon nanotubes. 4. The infrared stealth cloth of claim 1 , wherein the plurality of third carbon nanotubes is joined end-to-end along a length extending direction of the plurality of third carbon nanotubes. 5. The infrared stealth cloth of claim 1 , wherein the carbon nanotube structure consists of the first drawn carbon nanotube film consisting of the plurality of first carbon nanotubes, the second drawn carbon nanotube film consisting of the plurality of second carbon nanotubes, and the third drawn carbon nanotube film consisting of the plurality of third carbon nanotubes. 6. The infrared stealth cloth of claim 1 , wherein the first direction and the second direction form an angle of about 45 degrees, the first direction and the third direction form an angle of about 90 degrees, and the second direction and the third direction form an angle of about 45 degrees. 7. The infrared stealth cloth of claim 1 , wherein the infrared light absorber is in direct contact with the cloth substrate; and the first direction, the second direction, and the third direction are substantially parallel to a contact surface between the cloth substrate and the infrared light absorber. 8. The infrared stealth cloth of claim 1 , wherein the infrared light absorber further comprises a transparent coating layer located on the carbon nanotube structure. 9. The infrared stealth cloth of claim 8 , wherein a material of the coating layer is photoresist or polymer. 10. The infrared stealth cloth of claim 8 , wherein a material of the coating layer is polyvinyl alcohol cinnamate or cyclized rubber resist agent. 11. The infrared stealth cloth of claim 1 , wherein an absorptivity of the carbon nanotube structure in a wavelength range from about 2 μm to about 20 μm is greater than or equal to 98.975%. 12. A piece of infrared stealth clothes, comprising: an infrared stealth cloth comprising: a cloth substrate; and an infrared light absorber located on the cloth substrate and comprising a carbon nanotube structure, wherein an absorptivity of the carbon nanotube structure in a wavelength range from about 2 μm to about 20 μm is greater than or equal to 98.975%; and the carbon nanotube structure comprises: a first drawn carbon nanotube film comprising a plurality of first carbon nanotubes joined end-to-end by van der Waals attractive force and substantially extending along a first direction; a second drawn carbon nanotube film comprising a plurality of second carbon nanotubes joined end-to-end by van der Waals attractive force and substantially extending along a second direction; and a third drawn carbon nanotube film comprising a plurality of third carbon nanotubes joined end-to-end by van der Waals attractive force and substantially extending along a third direction; wherein the first drawn carbon nanotube film, the second drawn carbon nanotube film, and the third drawn carbon nanotube film are stacked on each other; and the first direction and the second direction form an angle of about 42 degrees to about 48 degrees, and the first direction and the third direction form an angle of about 84 degrees to about 96 degrees. 13. The piece of infrared stealth clothes of claim 12 , wherein the infrared light absorber is in direct contact with the cloth substrate; and the first direction, the second direction, and the third direction are substantially parallel to a contact surface between the cloth substrate and the infrared light absorber. 14. The piece of infrared stealth clothes of claim 12 , wherein the first direction and the second direction form an angle of about 45 degrees, and the first direction and the third direction form an angle of about 90 degrees, the second direction and the third direction form an angle of about 45 degrees. 15. The piece of infrared stealth clothes of claim 12 , wherein the carbon nanotube structure consists of the first drawn carbon nanotube film consisting of the plurality of first carbon nanotubes, the second drawn carbon nanotube film consisting of the plurality of second carbon nanotubes, and the third drawn carbon nanotube film consisting of the plurality of third carbon nanotubes. 16. The piece of infrared stealth clothes of claim 12 , wherein an absorptivity of the carbon nanotube structure in a wavelength range from about 250 nm to about 2 μm is greater than or equal to 98.85%. 17. An infrared stealth cloth, comprising: a cloth substrate; and an infrared light absorber located on the cloth substrate, wherein the infrared light absorber comprises a carbon nanotube structure, and the carbon nanotube structure comprises: a first drawn carbon nanotube film comprising a plurality of first carbon nanotubes joined end-to-end by van der Waals attractive force and substantially extending along a first direction; a second drawn carbon nanotube film comprising a plurality of second carbon nanotubes joined end-to-end by van der Waals attractive force and substantially extending along a second direction; and a third drawn carbon nanotube film comprising a plurality of third carbon nanotubes joined end-to-end by van der Waals attractive force and substantially extending along a third direction; wherein the first carbon nanotube film, the second carbon nanotube film, and the third carbon nanotube film are stacked on each other; the first carbon nanotube film is in direct contact with the second carbon nanotube film, and the second carbon nanotube film is in direct contact with the third carbon nanotube film; and the first direction and the second direction form an angle of about 42 degrees to about 48 degrees, and the first direction and the third direction form an angle of about 84 degrees to about 96 degrees. 18. The infrared stealth cloth of claim 17 , wherein an absorptivity of the carbon nanotube structure in a wavelength range from about 2 μm to about 20 μm is greater than or eq

Assignees

Inventors

Classifications

  • Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title

  • next to one or more woven fabric layers · CPC title

  • on fibrous or filamentary layer · CPC title

  • Nanotubes characterized by their properties · CPC title

  • Manufacture or treatment of nanostructures · CPC title

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What does patent US11530512B2 cover?
An infrared stealth cloth includes a cloth substrate and an infrared light absorber located on the cloth substrate. The infrared light absorber includes a first drawn carbon nanotube film, a second drawn carbon nanotube film, and a third drawn carbon nanotube film stacked on each other. The first drawn carbon nanotube film includes a plurality of first carbon nanotubes substantially extending a…
Who is the assignee on this patent?
Univ Tsinghua, Hon Hai Prec Ind Co Ltd
What technology area does this patent fall under?
Primary CPC classification D06M10/06. Mapped technology areas include Textiles & Paper.
When was this patent published?
Publication date Tue Dec 20 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).