Heteroepitaxial structure and method for forming the same, and nanogap electrode

US11529794B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11529794-B2
Application numberUS-202117213527-A
CountryUS
Kind codeB2
Filing dateMar 26, 2021
Priority dateOct 2, 2018
Publication dateDec 20, 2022
Grant dateDec 20, 2022

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A heteroepitaxial structure includes a first metal portion having a polycrystalline structure, a second metal portion on the first metal portion, the second metal portion has an island-shaped structure on the first metal portion, the second metal portion is provided corresponding to at least one crystalline grain exposed to a surface of the first metal portion, and the second metal portion and the at least one crystalline grain have a heteroepitaxial interface.

First claim

Opening claim text (preview).

What is claimed is: 1. A heteroepitaxial structure, comprising: a first metal portion having a polycrystalline structure; a second metal portion on the first metal portion; the second metal portion has a mountain shape or a hemispherical shape; the second metal portion is provided corresponding to at least one crystalline grain exposed to a surface of the first metal portion; and the second metal portion and the at least one crystalline grain have a heteroepitaxial interface. 2. The heteroepitaxial structure according to claim 1 , wherein the first metal portion comprises a metal element selected from platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Ru), osmium (Os) and iridium (Ir), and the second metal portion is gold (Au). 3. The heteroepitaxial structure according to claim 1 , wherein the first metal portion is palladium (Pd), the second metal portion is gold (Au), and an interface between the first metal portion and the second metal portion includes a solid solution of the first metal portion and the second metal portion. 4. A nanogap electrode, comprising: a first electrode and a second electrode each including a first metal portion and a second metal portion on the first metal portion, the first metal portion having a polycrystalline structure, wherein the first metal portion has a linear pattern having a width of 20 nm or less, the second metal portion is disposed at least on one end of the linear pattern of the first metal portion and has a mountain shape or a hemispherical shape, a heteroepitaxial interface is formed corresponding to at least one crystalline grain exposed to a surface of the first metal portion, and a distance between the second metal portions on the first electrode and on the second electrode is 5 nm or less. 5. The nanogap electrode according to claim 4 , wherein the second metal portion includes a plurality of crystal regions having different crystal orientations. 6. The nanogap electrode according to claim 4 , wherein the first metal portion comprises a metal element selected from platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Ru), osmium (Os) and iridium (Ir), and the second metal portion is gold (Au). 7. The nanogap electrode according to claim 4 , wherein the first metal portion is palladium (Pd), the second metal portion is gold (Au), and an interface between the first metal portion and the second metal portion includes a solid solution of the first metal portion and the second metal portion. 8. The nanogap electrode according to claim 4 , wherein the second metal portion is disposed at one end on a substantially central axis of the linear pattern of the first metal portion. 9. The nanogap electrode according to claim 4 , wherein the first metal portion has a linear pattern having a width of 15 nm or less.

Assignees

Inventors

Classifications

  • Manufacture or treatment of nanostructures · CPC title

  • Coating with metals · CPC title

  • using reducing agents · CPC title

  • with use of organic or inorganic compounds other than metals, first · CPC title

  • C30B7/14Primary

    the crystallising materials being formed by chemical reactions in the solution · CPC title

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What does patent US11529794B2 cover?
A heteroepitaxial structure includes a first metal portion having a polycrystalline structure, a second metal portion on the first metal portion, the second metal portion has an island-shaped structure on the first metal portion, the second metal portion is provided corresponding to at least one crystalline grain exposed to a surface of the first metal portion, and the second metal portion and …
Who is the assignee on this patent?
Japan Science & Tech Agency
What technology area does this patent fall under?
Primary CPC classification C23C18/1844. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Dec 20 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).