Type ii clathrates for rechargeable battery anodes
US-2015380724-A1 · Dec 31, 2015 · US
US11527750B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11527750-B2 |
| Application number | US-201916667982-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 30, 2019 |
| Priority date | Nov 30, 2018 |
| Publication date | Dec 13, 2022 |
| Grant date | Dec 13, 2022 |
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A main object of the present disclosure is to provide an active material whose volume variation due to charge and discharge is small. The present disclosure achieves the object by providing an active material comprising a primary particle including at least one crystal phase of a Type I silicon clathrate and a Type II silicon clathrate, and the primary particle includes a void inside thereof.
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What is claimed is: 1. An active material comprising a primary particle including a crystal phase of a Type I silicon clathrate as a main phase and optionally a crystal phase of a Type II silicon clathrate, and the primary particle includes a void inside thereof, the void being observed with a SEM (scanning electron microscope), wherein a void ratio inside the primary particle is in a range of from 4% to 40%. 2. The active material according to claim 1 , wherein the crystal phase of the Type I silicon clathrate has a peak at a position of 2θ=19.44°±1.00°, 21.32°±1.00°, 30.33°±1.00°, 31.60°±1.00°, 32.82°±1.00°, 36.29°±1.00°, 52.39°±1.00°, and 55.49°±1.00° in X-ray diffraction measurement using a CuKα ray. 3. The active material according to claim 1 , wherein the crystal phase of the Type II silicon clathrate is present in the active material and has a peak at a position of 2θ=20.09°±1.00°, 21.00°±1.00°, 26.51°±1.00°, 31.72°±1.00°, 36.26°±1.00°, and 53.01°±1.00° in X-ray diffraction measurement using a CuKα ray. 4. The active material according to claim 1 , wherein the void ratio inside the primary particle is in a range of from 10% to 38%. 5. A battery comprising a cathode layer, an electrolyte layer, and an anode layer, in this order, and the anode layer includes the active material according to claim 1 . 6. A method for producing an active material according to claim 1 , the method comprising steps of: a preparing step of preparing a precursor compound including at least a Na element and a Si element, and having at least a Zintl phase; and a heat treating step of heat treating the precursor compound, and the heat treating step includes a temperature rising treatment of rising a temperature to a first temperature at a rate of 100° C./min or more under reduced pressure, and after the temperature rising, a burning treatment of burning under reduced pressure.
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