Tunnel junctions for multijunction solar cells

US11527667B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11527667-B2
Application numberUS-201815964852-A
CountryUS
Kind codeB2
Filing dateApr 27, 2018
Priority dateApr 27, 2017
Publication dateDec 13, 2022
Grant dateDec 13, 2022

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Abstract

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Tunnel junctions for multijunction solar cells are provided. According to an aspect of the invention, a tunnel junction includes a first layer including p-type AlGaAs, a second layer including n-type GaAs, wherein the second layer is a quantum well, and a third layer including n-type AlGaAs or n-type lattice matched AlGaInP. The quantum well can be GaAs or AlxGaAs with x being more than about 40%, and lattice matched GaInAsNSb in the Eg range of from about 0.8 to about 1.4 eV.

First claim

Opening claim text (preview).

What is claimed is: 1. A tunnel junction in a multijunction solar cell comprising, in order: a first layer comprising p-type AlGaAs; a second layer comprising n-type GaAs, wherein the second layer is a quantum well; and a third layer comprising n-type AlGaAs, wherein the concentration of Al in the third layer is at least 50%; and wherein the second layer and the third layer are doped with Se, Si, Te or any combination thereof at a concentration of from about 1×10 18 cm −3 to about 1×10 20 cm −3 . 2. The tunnel junction of claim 1 , wherein a concentration of Al in the first layer is selected from the group consisting of at least 40%, at least 50%, and at least 60%. 3. The tunnel junction of claim 1 , further comprising additional adjacent layers selected from the group consisting of AlInGaP, AlGaAs, GaAs, GaInP, GaInAsP, InGaAsSb, InGaAsNSb, InP, InGaAs, InAlAs, GaAsSb, AlAsSb, GaInAsSb, and GaInAsP. 4. The tunnel junction of claim 1 , wherein the second layer quantum well is selected from the group consisting of Al x GaAs, or GaInAsNSb wherein x is at less than 40%. 5. The tunnel junction of claim 1 , wherein the thickness of the second layer is from about 1 nm to about 20 nm. 6. The tunnel junction of claim 1 that is operable up to about 1000× sun.

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What does patent US11527667B2 cover?
Tunnel junctions for multijunction solar cells are provided. According to an aspect of the invention, a tunnel junction includes a first layer including p-type AlGaAs, a second layer including n-type GaAs, wherein the second layer is a quantum well, and a third layer including n-type AlGaAs or n-type lattice matched AlGaInP. The quantum well can be GaAs or AlxGaAs with x being more than about 4…
Who is the assignee on this patent?
Alliance Sustainable Energy, The Regents Of The Univ Of California A California Corporation
What technology area does this patent fall under?
Primary CPC classification H01L31/0725. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Dec 13 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).