Oxygen doped cadmium magnesium telluride alloy
US-2015372180-A1 · Dec 24, 2015 · US
US11527667B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11527667-B2 |
| Application number | US-201815964852-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 27, 2018 |
| Priority date | Apr 27, 2017 |
| Publication date | Dec 13, 2022 |
| Grant date | Dec 13, 2022 |
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Tunnel junctions for multijunction solar cells are provided. According to an aspect of the invention, a tunnel junction includes a first layer including p-type AlGaAs, a second layer including n-type GaAs, wherein the second layer is a quantum well, and a third layer including n-type AlGaAs or n-type lattice matched AlGaInP. The quantum well can be GaAs or AlxGaAs with x being more than about 40%, and lattice matched GaInAsNSb in the Eg range of from about 0.8 to about 1.4 eV.
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What is claimed is: 1. A tunnel junction in a multijunction solar cell comprising, in order: a first layer comprising p-type AlGaAs; a second layer comprising n-type GaAs, wherein the second layer is a quantum well; and a third layer comprising n-type AlGaAs, wherein the concentration of Al in the third layer is at least 50%; and wherein the second layer and the third layer are doped with Se, Si, Te or any combination thereof at a concentration of from about 1×10 18 cm −3 to about 1×10 20 cm −3 . 2. The tunnel junction of claim 1 , wherein a concentration of Al in the first layer is selected from the group consisting of at least 40%, at least 50%, and at least 60%. 3. The tunnel junction of claim 1 , further comprising additional adjacent layers selected from the group consisting of AlInGaP, AlGaAs, GaAs, GaInP, GaInAsP, InGaAsSb, InGaAsNSb, InP, InGaAs, InAlAs, GaAsSb, AlAsSb, GaInAsSb, and GaInAsP. 4. The tunnel junction of claim 1 , wherein the second layer quantum well is selected from the group consisting of Al x GaAs, or GaInAsNSb wherein x is at less than 40%. 5. The tunnel junction of claim 1 , wherein the thickness of the second layer is from about 1 nm to about 20 nm. 6. The tunnel junction of claim 1 that is operable up to about 1000× sun.
Solar cells from Group III-V materials · CPC title
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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