Impedance matched superconducting nanowire photodetector for single- and multi-photon detection

Patent metadata

Field	Value
Publication number	US-11522115-B2
Application number	US-202016808904-A
Country	US
Kind code	B2
Filing date	Mar 4, 2020
Priority date	Oct 18, 2019
Publication date	Dec 6, 2022
Grant date	Dec 6, 2022

Abstract

Conventional readout of a superconducting nanowire single-photon detector (SNSPD) sets an upper bound on the output voltage to be the product of the bias current and the load impedance, IB×Zload, where Zload is limited to 50Ω in standard RF electronics. This limit is broken/exceeded by interfacing the 50Ω load and the SNSPD using an integrated superconducting transmission line taper. The taper is a transformer that effectively loads the SNSPD with high impedance without latching. The taper increases the amplitude of the detector output while preserving the fast rising edge. Using a taper with a starting width of 500 nm, a 3.6× higher pulse amplitude, 3.7× faster slew rate, and 25.1 ps smaller timing jitter was observed. The taper also makes the detector's output voltage sensitive to the number of photon-induced hotspots and enables photon number resolution.

First claim

The invention claimed is:

1. A photodetector comprising:
a biasing circuit configured to supply a bias current;
a load in series with the biasing circuit and having a load impedance;
a superconducting nanowire, in series with the biasing circuit and in parallel with the load, to conduct the bias current, the superconducting nanowire switching from a superconducting state to a resistive state in response to absorption of a photon wave packet, thereby diverting a portion of the bias current to the load;
an impedance-matching taper, having a first end connected to the superconducting nanowire and a second end connected to the load, to increase a peak amplitude of an output voltage pulse on the load in response to diversion of the portion of the bias current to the load, the impedance-matching taper having an impedance greater than the load impedance at the first end and about equal to the load impedance at the second end; and
circuitry configured to measure the peak amplitude of the output voltage on the load and correlate the peak amplitude to a number of absorbed photons in the photon wave packet.

2. The photodetector of claim 1 , wherein the biasing circuit comprises a low-noise battery, a resistor, and a bias tee.

3. The photodetector of claim 1 , wherein the load comprises a radio-frequency amplifier.

4. The photodetector of claim 1 , wherein the load impedance is 50Ω.

5. The photodetector of claim 1 , wherein the superconducting nanowire follows a meander pattern over an area of less than about 1 mm 2 .

6. The photodetector of claim 1 , wherein the superconducting nanowire follows a meander pattern over an area of less than about 100 μm 2 .

7. The photodetector of claim 1 , wherein the superconducting nanowire is fabricated in a superconducting thin film and the impedance-matching taper comprises a transmission line formed of the superconducting thin film.

8. The photodetector of claim 1 , wherein the superconducting nanowire is disposed within an optical cavity.

9. The photodetector of claim 1 , wherein a resistance of the superconducting nanowire in the resistive state is proportional to a number of photons n in the photon wave packet.

10. The photodetector of claim 9 , wherein the resistance of the superconducting nanowire in the resistive state is configured to vary sublinearly with the number of photons n in the photon wave packet.

11. The photodetector of claim 1 , wherein the impedance-matching taper is configured to load the superconducting nanowire without latching.

12. The photodetector of claim 1 , wherein the impedance-matching taper is configured to reflect microwave signals to prevent latching.

13. The photodetector of claim 1 , wherein the impedance-matching taper is a grounded co-planar waveguide.

14. The photodetector of claim 1 , wherein the impedance at the first end of the impedance-matching taper is at least 1 kΩ.

15. The photodetector of claim 1 , wherein the impedance-matching taper is configured to increase a sensitivity of the output voltage on the load to a variation of a resistance of the superconducting nanowire in the resistive state due to different photon numbers.

16. The photodetector of claim 1 , wherein the impedance taper is configured to increase the peak amplitude of the output voltage on the load.

17. The photodetector of claim 1 , wherein the circuitry comprises a discriminator configured to correlate the peak amplitude with a number of absorbed photons in the photon wave packet.

18. A method of detecting a photon wave packet, the method comprising:
running a bias current through a superconducting nanowire in parallel with a load;
absorbing the photon wave packet with the superconducting nanowire, absorption of the photon wave packet diverting a portion of the bias current to the load via an impedance-matching taper;
measuring a peak amplitude of an output voltage pulse across the load caused by diversion of the portion of the bias current to the load; and
determining a number of photons in the photon wave packet based on the peak amplitude of the output voltage pulse.

Assignees

• Massachusetts Inst Technology
• California Inst Of Techn

Inventors

• Zhu Di
• Colangelo Marco
• Korzh Boris
• Shaw Matthew
• Berggren Karl K

Classifications

• G01J1/42

  using electric radiation detectors (optical or mechanical part G01J1/04; by comparison with a reference light or electric value G01J1/10) · CPC title

• G01J2001/442

  Single-photon detection or photon counting · CPC title

• G01J1/44 Primary

  Electric circuits {(for command of an exposure part G03B7/02)} · CPC title

• H01L39/08

  Electricity · mapped topic

• H01L39/10 Primary

  Electricity · mapped topic