Light-emitting diode chip, method for fabricating the same, backlight module, and display device

Patent metadata

Field	Value
Publication number	US-11522110-B2
Application number	US-201816335572-A
Country	US
Kind code	B2
Filing date	Oct 17, 2018
Priority date	Mar 19, 2018
Publication date	Dec 6, 2022
Grant date	Dec 6, 2022

Abstract

This disclosure discloses a light-emitting diode chip, a method for fabricating the same, a backlight module, and a display device. The light-emitting diode chip includes: a transparent base substrate; at least one light-emitting diode located on one side of the base substrate; and a dimming structure located on a side of the base substrate away from the light-emitting diode, wherein the light-emitting diode is configured to emit light from double sides thereof; and the dimming structure is configured to adjust the intensity of light emitted from the side of the base substrate away from the light-emitting diode.

First claim

The invention claimed is:

1. A light-emitting diode chip, comprising:
a transparent base substrate;
at least one light-emitting diode located on one side of the base substrate; and
a dimming structure located on a side of the base substrate away from the light-emitting diode, wherein:
the light-emitting diode is configured to emit light from double sides thereof; and
the dimming structure is configured to adjust an intensity of light emitted from the side of the base substrate away from the light-emitting diode;
wherein the dimming structure comprises:
an opposite substrate;
a liquid crystal layer located between the base substrate and the opposite substrate;
a first polarization layer located on a side of the liquid crystal layer away from the opposite substrate;
a second polarization layer located on a side of the liquid crystal layer away from the first polarization layer;
deflection electrodes, located between the base substrate and the opposite substrate, configured to control liquid crystal molecules in the liquid crystal layer to be deflected;
a first alignment film located on the side of the liquid crystal layer away from the opposite substrate;
a second alignment film located on a side of the liquid crystal layer away from the first alignment film; and
a sealant, located between the first alignment film and the second alignment film, configured to seal the liquid crystal layer.

2. The light-emitting diode chip according to claim 1 , wherein the deflection electrodes comprise a first deflection electrode and a second deflection electrode;
the dimming structure further comprises: a first via-hole and a second via-hole arranged on the opposite substrate, a first electrode arranged on a side of the opposite substrate away from the base substrate and corresponding to the first via-hole, and a second electrode arranged on the side of the opposite substrate away from the base substrate and corresponding to the second via-hole; and
the first deflection electrode is connected with the first electrode through the first via-hole, and the second deflection electrode is connected with the second electrode through the second via-hole.

3. The light-emitting diode chip according to claim 2 , wherein the first deflection electrode is located on the side of the liquid crystal layer away from the opposite substrate, and the second deflection electrode is located on the side of the liquid crystal layer away from the first deflection electrode.

4. The light-emitting diode chip according to claim 3 , wherein the dimming structure further comprises a third electrode located on a side of the opposite substrate facing the base substrate;
an orthographic projection of the third electrode onto the base substrate lies out of a closed-loop structure defined by an orthographic projection of the sealant onto the base substrate; and
the first deflection electrode is connected with the third electrode, and the third electrode is connected with the first electrode through the first via-hole.

5. The light-emitting diode chip according to claim 3 , wherein the base substrate is made of a conductive material;
the first polarization layer is located on a side of the first deflection electrode proximate to the opposite substrate; and
the base substrate is further used as the first deflection electrode and a cathode of the light-emitting diode.

6. The light-emitting diode chip according to claim 2 , wherein the first deflection electrode and the second deflection electrode are arranged at a same layer, and the first deflection electrode and the second deflection electrode are arranged to be insulated from each other.

7. The light-emitting diode chip according to claim 6 , wherein the first deflection electrode and the second deflection electrode are located on the side of the liquid crystal layer away from the opposite substrate;
the dimming structure further comprises a fourth electrode and a fifth electrode located on a side of the opposite substrate facing the base substrate;
an orthographic projection of the fourth electrode and an orthographic projection of the fifth electrode onto the base substrate lie out of a closed-loop structure defined by an orthographic projection of the sealant onto the base substrate;
the first deflection electrode is connected with the fourth electrode, and the fourth electrode is connected with the first electrode through the first via-hole; and
the second deflection electrode is connected with the fifth electrode, and the fifth electrode is connected with the second electrode through the second via-hole.

8. The light-emitting diode chip according to claim 6 , wherein the first deflection electrode and the second deflection electrode are located on a side of the liquid crystal layer facing the opposite substrate.

9. The light-emitting diode chip according to claim 2 , wherein an orthographic projection of the second polarization layer onto the opposite substrate does not overlap with the first via-hole and the second via-hole.

10. The light-emitting diode chip according to claim 2 , wherein the dimming structure further comprises: a first conductive material filled in the first via-hole, and a second conductive material filled in the second via-hole;
the first deflection electrode is connected with the first electrode through the first conductive material; and
the second deflection electrode is connected with the second electrode through the second conductive material.

11. A backlight module, comprising the light-emitting diode chip according to claim 1 .

12. The backlight module according to claim 11 , further comprising an encapsulation bracket configured to encapsulate the light-emitting diode chip;
wherein the encapsulation bracket comprises a first light exit and a second light exit arranged opposite to each other;
light emitted from the light-emitting diode chip from a side of the base substrate facing the light-emitting diode exits at the first light exit, and the light emitted from the light-emitting diode chip from the side of the base substrate away from the light-emitting diode exits at the second light exit.

13. The backlight module according to claim 12 , wherein the backlight module further comprises: a frame comprising an accommodating chamber, and a blocking wall surrounding the frame;
the frame is arranged with a dodge groove in correspondence to the second light exit of the encapsulation bracket; and
the blocking wall is arranged with a third light exit in correspondence to the dodge groove.

14. A display device, comprising the backlight module according to claim 11 .

15. The display device according to claim 14 , further comprising: a housing and a light transmission structure;
wherein a light-supplementing hole is arranged on the housing; and
the light transmission structure comprises: a light entrance corresponding to a third light exit of the backlight module, a light exit corresponding to the light-supplementing hole, a light-shielding structure, which is openable and closable, located at the light exit, and a control module configured to control an extent to which the light-shielding structure is opened and closed.

16. A method for fabricating the light-emitting diode chip according to claim 1 , comprising:
forming a plurality of light-emitting diodes on the one side of the transparent base substrate;
forming a plurality of dimming structures on the side of the base substrate away from the light-emitting diodes to form a plurality of light-emitting diode chips, wherein the dimming structures each correspond to at least one

Assignees

• Beijing Boe Optoelectronics Tech Co Ltd
• Boe Technology Group Co Ltd
• Beijing Boe Technology Dev Co Ltd

Inventors

• Tian Ting
• Zhang Yawen
• Zhai Ming
• Zhou Dayong
• Zhao Jinge
• Guo Pan
• Dou Shuqian
• Fu Xiaoliang
• Fan Zhiqiang
• An Meijuan
• Deng Liguang
• Han Yongjie

Classifications

• H10W90/00 Primary

  Package configurations · CPC title

• G02F1/133562

  on the viewer side · CPC title

• G03B15/05 Primary

  Combinations of cameras with electronic flash apparatus; Electronic flash units · CPC title

• G02F2201/16

  series; tandem · CPC title

• G02F1/133351

  Manufacturing of individual cells out of a plurality of cells, e.g. by dicing · CPC title