Memory device with on-chip sacrificial memory cells

Patent metadata

Field	Value
Publication number	US-11521680-B2
Application number	US-202017139059-A
Country	US
Kind code	B2
Filing date	Dec 31, 2020
Priority date	Dec 31, 2020
Publication date	Dec 6, 2022
Grant date	Dec 6, 2022

Abstract

An integrated circuit includes a primary memory array with cells switchable between first and second states. The circuit also includes sacrificial memory cells; each fabricated to be switchable between the first and second states and associated with at least one row of the primary array. A controller is configured to detect a write operation to a row of the primary array, stress a sacrificial cell associated with the row and detect a failure of the associated sacrificial cell. The sacrificial cells are fabricated to have lower write-cycle endurance than cells of the primary array or are subjected to more stress. Failure of a row of the primary array is predicted based, at least in part, on a detected failure of the associated sacrificial cell.

First claim

The invention claimed is:

1. An integrated circuit, comprising:
a non-volatile memory (NVM) array including a plurality of rows, each row including a plurality of NVM cells, each NVM cell configured to be switchable between a first state and a second state in response to a write operation;
a plurality of sacrificial NVM cells configured to be switchable between the first state and the second state, each sacrificial NVM cell associated with at least one row of the NVM array; and
a controller configured to:
detect a write operation to a row of the NVM array;
stress, based on the write operation, sacrificial NVM cells associated with said row, including:
switch a first sacrificial NVM cell from the first state to the second state for a write operation that switches an NVM cell of the row from the first state to the second state, and
switch a second sacrificial NVM cell from the second state to the first state for a write operation that switches an NVM cell of the row from the second state to the first state; and

detect a failure of the first or second associated sacrificial NVM cell to switch states.

2. The integrated circuit of claim 1 , where failure of at least one row of the NVM array is predicted based, at least in part, on a detected failure of the associated sacrificial NVM cell.

3. The integrated circuit of claim 1 , where the sacrificial NVM cells have a lower write-cycle endurance than the NVM array cells, and where different sacrificial NVM cells have similar or different levels of write-cycle endurance.

4. The integrated circuit of claim 3 , where:
the sacrificial NVM cells and the NVM array cells each include a stack having a cross-dimension and an oxide layer, and
the sacrificial NVM cells have a thinner oxide layer or a smaller cross-dimension than the NVM array cells.

5. The integrated circuit of claim 1 , where the controller is configured to stress said associated sacrificial NVM cells more often than the write operation is detected.

6. The integrated circuit of claim 1 , further comprising circuitry configured to provide a switching pulse to the sacrificial NVM cells, the switching pulse having a higher level or longer duration than a switching pulse applied during a write operation to the NVM array.

7. The integrated circuit of claim 1 , where the sacrificial NVM cells are located in proximity to the NVM array.

8. The integrated circuit of claim 1 , where each row of the NVM array contains one or more words, each NVM cell represents one bit of a word, and the sacrificial NVM cells are associated with the words of the NVM array.

9. The integrated circuit of claim 1 , where the NVM array includes a plurality of sub-regions, and where each sub-region of the NVM array is associated with a plurality of sacrificial NVM cells.

10. The integrated circuit of claim 1 , where the sacrificial NVM cells and the NVM array cells include magneto-resistive random access memory (MRAM), phase change memory (PCM), resistive random access memory (RRAM) or correlated electron random access memory (CeRAM).

11. The integrated circuit of claim 1 , further comprising:
peripheral circuitry coupled to the NVM array and configured to perform write operation thereon,
where the controller is integrated with the peripheral circuitry.

12. A method, comprising:
detecting a write operation to a row of a non-volatile memory (NVM) array, the row including a plurality of NVM cells, the write operation switching one or more NVM cells of the row from a first state to a second state or from the second state to the first state;
switching, based on the detected write operation, sacrificial NVM cells associated with said row, the switching including:
switching a first sacrificial NVM cell from the first state to the second state for a write operation that switches an NVM cell of the row from the first state to the second state, and
switching a second sacrificial NVM cell from the second state to the first state for a write operation that switches an NVM cell of the row from the second state to the first state; and

detecting a failure of the first or second associated sacrificial NVM cell to switch states.

13. The method of claim 12 , further comprising:
predicting, based at least in part on a detected failure of one or more sacrificial NVM cells, failure of said row.

14. The method of claim 13 , further comprising:
signaling the predicted failure of said row.

15. The method of claim 13 , further comprising:
relocating, in response to predicted failure of said row, data from said row to another row of the NVM array.

16. The method of claim 12 , where:
switching a NVM cell of the row between the first state and the second state includes applying a first switching pulse to the NVM cell,
switching a sacrificial NVM cell of the one or more sacrificial NVM cells between the first state and the second state includes applying a second switching pulse to the sacrificial NVM cell, and
the second switching pulse has a higher level or longer duration than the first switching pulse.

17. The method of claim 12 , where said switching the one or more sacrificial NVM cells of the integrated circuit between the first state and the second state is performed more frequently than the write operation is detected.

18. A method, comprising:
at a controller coupled to an NVM array and a plurality of sacrificial NVM cells, the NVM array including a plurality of rows, each row including a plurality of NVM cells:
automatically associating, based on a detected operating condition of the NVM array, at least one sacrificial NVM cell to each row of the NVM array;
detecting a write operation to a row of the NVM array, the write operation switching one or more NVM cells of the row between a first state and a second state;
switching, based on the detected write operation, an associated sacrificial NVM cell between the first state and the second state; and
detecting a failure of the associated sacrificial NVM cell to switch between the first state and the second state.

Assignees

• Advanced Risc Mach Ltd

Inventors

• Garcia Redondo Fernando
• Bhargava Mudit
• Prabhat Pranay
• Jeloka Supreet

Classifications

• G11C29/24

  Accessing extra cells, e.g. dummy cells or redundant cells · CPC title

• G11C11/1675

  Writing or programming circuits or methods · CPC title

• G11C29/028

  with adaption or trimming of parameters · CPC title

• G11C29/50008

  of impedance · CPC title

• G11C13/0035

  Evaluating degradation, retention or wearout, e.g. by counting writing cycles · CPC title