Radiation detectors with scintillators

Patent metadata

Field	Value
Publication number	US-11520060-B2
Application number	US-202117471753-A
Country	US
Kind code	B2
Filing date	Sep 10, 2021
Priority date	Mar 29, 2019
Publication date	Dec 6, 2022
Grant date	Dec 6, 2022

Abstract

Disclosed herein is radiation detector, comprising a first photodiode comprising a first junction; and a first scintillator, wherein a first point in a first plane and inside the first scintillator is essentially completely surrounded in the first plane by an intersection of the first plane and the first junction. The first junction is a p-n junction, a p-i-n junction, a heterojunction, or a Schottky junction. The radiation detector further comprises a first reflector configured to guide essentially all photons emitted by the first scintillator into the first photodiode. The first scintillator is essentially completely enclosed by the first reflector and the first photodiode.

First claim

What is claimed is:

1. A radiation detector, comprising:
a first photodiode comprising a first junction;
a first scintillator;
a first reflector configured to guide photons emitted by the first scintillator into the first photodiode; and
wherein a first point in a first plane and inside the first scintillator is essentially completely surrounded in the first plane by an intersection of the first plane and the first junction;
wherein the first reflector is electrically connected to the first photodiode.

2. The radiation detector of claim 1 , wherein the first junction is a p-n junction, a p-i-n junction, a heterojunction, or a Schottky junction.

3. The radiation detector of claim 1 , wherein the first photodiode is configured to measure a characteristic of photons emitted by the first scintillator and incident on the first photodiode.

4. The radiation detector of claim 3 , wherein the characteristic is energy, radiant flux, wavelength, or frequency.

5. The radiation detector of claim 1 , wherein the first scintillator is in direct physical contact with the first photodiode.

6. The radiation detector of claim 1 , wherein the first scintillator comprises sodium iodide.

7. The radiation detector of claim 1 , wherein the first scintillator comprises quantum dots.

8. The radiation detector of claim 1 , further comprising a substrate, wherein the first scintillator is in a recess into a substrate surface of the substrate.

9. The radiation detector of claim 8 , wherein the recess has a shape of a truncated pyramid.

10. The radiation detector of claim 8 , wherein the substrate comprises silicon.

11. The radiation detector of claim 8 , wherein the first photodiode is in the substrate.

12. The radiation detector of claim 8 , wherein the first junction conforms to side and bottom walls of the recess.

13. The radiation detector of claim 1 , wherein the first reflector is configured to reflect photons emitted by the first scintillator toward the first photodiode.

14. The radiation detector of claim 1 , wherein the first reflector is not opaque to some radiation particles which are able to cause the first scintillator to emit photons when the radiation particles are incident on the first scintillator.

15. The radiation detector of claim 1 , wherein the first scintillator is essentially completely enclosed by the first reflector and the first photodiode.

16. The radiation detector of claim 1 , wherein the first reflector comprises a material selected from the group consisting of aluminum, silver, gold, copper, and any combinations thereof.

17. The radiation detector of claim 1 , wherein the first reflector is in direct physical contact with the first scintillator.

18. The radiation detector of claim 1 , further comprising:
a second photodiode comprising a second junction and being adjacent to the first photodiode; and
a second scintillator,
wherein a second point in a second plane and inside the second scintillator is essentially completely surrounded in the second plane by an intersection of the second plane and the second junction.

19. The radiation detector of claim 18 , further comprising a second reflector configured to guide photons emitted by the second scintillator into the second photodiode.

20. The radiation detector of claim 18 , further comprising a common electrode electrically connected to the first and second photodiodes.

21. A method, comprising:
forming a first recess into a substrate surface of a substrate;
forming a first junction in the substrate;
forming a first scintillator in the first recess; and
forming a first reflector on the first scintillator, wherein the first reflector is configured to guide photons emitted by the first scintillator into a first photodiode which comprises the first junction;
wherein the first reflector is electrically connected to the first photodiode;
wherein a first point in a first plane and inside the first scintillator is essentially completely surrounded in the first plane by an intersection of the first plane and the first junction.

22. The method of claim 21 , wherein the first junction is a p-n junction, a p-i-n junction, a heterojunction, or a Schottky junction.

23. The method of claim 21 , wherein a first photodiode which comprises the first junction is configured to measure a characteristic of photons emitted by the first scintillator and incident on the first photodiode.

24. The method of claim 23 , wherein the characteristic is energy, radiant flux, wavelength, or frequency.

25. The method of claim 21 , wherein the first junction conforms to side and bottom walls of the first recess.

26. The method of claim 21 , wherein said forming the first junction comprises ion implantation.

27. The method of claim 21 , wherein said forming the first scintillator in the first recess comprises:
forming a scintillator layer on the substrate surface of the substrate; and
polishing a layer surface of the scintillator layer until the substrate surface is exposed to a surrounding ambient.

28. The method of claim 21 , wherein the first reflector is configured to reflect photons emitted by the first scintillator toward the first photodiode.

29. The method of claim 21 , wherein the first reflector is not opaque to some radiation particles which are able to cause the first scintillator to emit photons when the radiation particles are incident on the first scintillator.

30. The method of claim 21 , wherein the first scintillator is essentially completely enclosed by the first reflector and the first photodiode.

31. The method of claim 21 , wherein the first reflector comprises a material selected from the group consisting of aluminum, silver, gold, copper, and any combinations thereof.

32. The method of claim 21 , wherein the first reflector is in direct physical contact with the first scintillator.

33. The method of claim 21 , further comprising:
forming a second recess into the substrate surface of the substrate;
forming a second junction in the substrate; and
forming a second scintillator in the second recess,
wherein a second point in a second plane and inside the second scintillator is essentially completely surrounded in the second plane by an intersection of the second plane and the second junction.

34. The method of claim 33 , further comprising forming a second reflector on the second scintillator,
wherein the second reflector is configured to guide photons emitted by the second scintillator into a second photodiode which comprises the second junction.

Assignees

• Shenzhen Xpectvision Tech Co Ltd

Inventors

• Cao Peiyan
• Liu Yurun

Classifications

• G01T1/20187 Primary

  Position of the scintillator with respect to the photodiode, e.g. photodiode surrounding the crystal, the crystal surrounding the photodiode, shape or size of the scintillator · CPC title

• G01T1/2018 Primary

  Scintillation-photodiode combinations · CPC title

• G01T1/2002

  Optical details, e.g. reflecting or diffusing layers · CPC title

• H01L31/145

  Electricity · mapped topic

• H10F55/17

  wherein the radiation-sensitive semiconductor devices have potential barriers · CPC title