Process for synthesis of b-site doped abx3 perovskite nanocrystals
US-2024067875-A1 · Feb 29, 2024 · US
US11518688B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11518688-B2 |
| Application number | US-202017104358-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 25, 2020 |
| Priority date | Nov 27, 2019 |
| Publication date | Dec 6, 2022 |
| Grant date | Dec 6, 2022 |
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All inorganic perovskites for short-wave IR (SWIR) devices having improved chemical stability and long-term stability. Improved methods of making all inorganic perovskites for short-wave IR (SWIR) devices are also disclosed herein.
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What is claimed is: 1. An inorganic perovskite material having a formula of A + B 2+ XY 2 wherein: A + X is a first metal salt comprising: A + , a first monovalent alkali metal cation, and X, a first monovalent anion; and B 2+ Y 2 is a second metal salt comprising: B 2+ , a second bivalent alkali earth metal, heavy metal, or transition metal cation, and Y 2 , two second monovalent anions; wherein the inorganic perovskite material further comprises a stabilizer comprising 1-(3-sulfopropyl) pyridinium hydroxide inner salt, and wherein a molar ratio of the first metal salt to the second metal salt is about 2:1. 2. The inorganic perovskite material of claim 1 , wherein the first metal salt is cesium iodide. 3. The inorganic perovskite material of claim 1 , wherein the second metal salt is lead (II) iodide. 4. The inorganic perovskite material of claim 1 , wherein the stabilizer is present at a weight ratio of about 0.8% compared to the combined weight of the first metal salt and the second metal salt. 5. The inorganic perovskite material of claim 1 , wherein the first monovalent anion and/or the two second monovalent anions are Br—, Cl—, I—, or combinations thereof. 6. The inorganic perovskite material of claim 1 , further comprising the inorganic perovskite material is a layer on a glass substrate; the glass substrate operative to stabilize the inorganic perovskite material. 7. The inorganic perovskite material of claim 6 , wherein the inorganic perovskite material does not change in maximum wavelength of absorbance from 1000 nm to 2800 nm at ambient temperature for longer than about 8 days. 8. The inorganic perovskite material of claim 1 , wherein the inorganic perovskite material has a highest SWIR absorbance between about 1000-2800 nm. 9. A method of making an inorganic perovskite material having a formula of A + B 2+ XY 2 , comprising: preparing a precursor solution in a solvent by: dissolving a first metal salt containing a first monovalent alkali metal cation, A + , and a first monovalent anion, X, in the solvent; dissolving an second metal salt containing a second bivalent alkali earth metal, heavy metal, or transition metal cation, B 2+ , and two second monovalent anions, Y 2 , in the solvent, wherein a molar ratio of the first metal salt to the second metal salt is about 2:1 in the solvent; adding a stabilizer to the precursor solution; dispersing the precursor solution on a substrate; and annealing the dispersed precursor solution on the substrate at an annealing temperature from 40-300° C., to form an inorganic perovskite material, wherein the stabilizer comprises 1-(3-sulfopropyl) pyridinium hydroxide inner salt. 10. The method of claim 9 , wherein annealing is done in a vacuum. 11. The method of claim 9 , wherein the preparing a precursor solution in a solvent is at a temperature from 60-80° C. and wherein dispersing the precursor solution on a substrate is at less than 110° C. 12. The method of claim 9 , wherein the first metal salt is cesium iodide and the second metal salt is lead (II) iodide. 13. The method of claim 12 , wherein the annealing temperature is about 50° C. and wherein the inorganic perovskite material is operative to have a maximum SWIR absorbance at about 1200 nm. 14. The method of claim 12 , wherein the annealing temperature is about 80° C. and wherein the inorganic perovskite material is operative to have a maximum SWIR absorbance at about 1400 nm. 15. The method of claim 12 , wherein the annealing temperature is about 100° C. and wherein the inorganic perovskite material is operative to have a maximum SWIR absorbance at about 1500 nm. 16. The method of claim 9 , further comprising wherein the annealing temperature is operative to determine the wavelength of maximum SWIR absorbance of the inorganic perovskite material. 17. The method of claim 9 , wherein the solvent is dimethylformamide. 18. The method of claim 9 , wherein dispersing the precursor solution on a substrate is done by spin coating the precursor solution on the substrate. 19. The method of claim 9 , wherein the substrate is glass and the glass is operative to stabilize the inorganic perovskite material at ambient temperature.
comprising semiconducting materials · CPC title
perovskite-type (ABO3) · CPC title
by XPS, EDX or EDAX data · CPC title
by IR- or Raman-data · CPC title
obtained by SEM · CPC title
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