Reflection minimization for sensor

US11517938B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11517938-B2
Application numberUS-201816107894-A
CountryUS
Kind codeB2
Filing dateAug 21, 2018
Priority dateAug 21, 2018
Publication dateDec 6, 2022
Grant dateDec 6, 2022

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

An electronic device includes a substrate layer having a front surface and a back surface opposite the front surface, a plurality of ultrasonic transducers formed on the front surface of the substrate layer, wherein the plurality of ultrasonic transducers generate backward waves during operation, the backward waves propagating through the substrate layer, and a plurality of substrate structures formed within the back surface of the substrate layer, the plurality of substrate structures configured to modify the backward waves during the operation.

First claim

Opening claim text (preview).

What is claimed is: 1. An electronic device comprising: a substrate layer having a front surface and a back surface opposite the front surface, the substrate layer comprising a plurality of control elements for controlling ultrasonic transducers and interconnections supporting electrical communication between the ultrasonic transducers and the plurality of control elements; and a plurality of ultrasonic transducers formed on the front surface of the substrate layer, wherein the plurality of ultrasonic transducers generate forward waves and backward waves during operation, the forward waves propagating away from the substrate layer for interaction with an object and the backward waves propagating into and through the substrate layer; and a plurality of substrate structures formed within the back surface of the substrate layer, the plurality of substrate structures configured to reduce an impact of the backward waves on a signal generated by reflected waves received responsive to the forward waves reflecting off of the object during the operation. 2. The electronic device of claim 1 , wherein the plurality of substrate structures comprises scattering structures configured to modify a direction of the backward waves during the operation. 3. The electronic device of claim 2 , wherein the scattering structures are dimensioned to create destructive interference of the backward waves. 4. The electronic device of claim 1 , wherein the plurality of substrate structures comprises absorption structures comprising acoustic absorption material to modify an amplitude of the backward waves during the operation. 5. The electronic device of claim 1 , wherein the plurality of ultrasonic transducers are Piezoelectric Micromachined Ultrasonic Transducer (PMUT) devices. 6. The electronic device of claim 5 , wherein a PMUT device of the plurality of ultrasonic transducers comprises: a support structure connected to the substrate layer; and a membrane connected to the support structure such that a cavity is defined between the membrane and the substrate layer, the membrane configured to allow movement at ultrasonic frequencies, the membrane comprising: a piezoelectric layer, first and second electrodes coupled to opposing sides of the piezoelectric layer, and a mechanical support layer connected to the first electrode. 7. The electronic device of claim 6 , wherein the support structure is one of an edge support structure and an interior support structure disposed within the cavity and connected to the substrate layer and the membrane. 8. The electronic device of claim 6 , wherein the plurality of substrate structures are aligned with support structures of the plurality of ultrasonic transducers. 9. The electronic device of claim 6 , wherein dimensions of the plurality of substrate structures are related to dimensions of support structures of the plurality of ultrasonic transducers. 10. The electronic device of claim 1 , wherein dimensions of the plurality of substrate structures are related to operating characteristics of the plurality of ultrasonic transducers. 11. The electronic device of claim 1 , further comprising a mounting substrate comprising a plurality of absorption structures, wherein the mounting substrate is coupled to the back surface of the substrate layer. 12. An electronic device comprising: a substrate layer having a front surface and a back surface opposite the front surface, the substrate layer comprising a plurality of control elements for controlling ultrasonic transducers and interconnections supporting electrical communication between the ultrasonic transducers and the plurality of control elements; and a plurality of ultrasonic transducers formed on the front surface of the substrate layer, the plurality of ultrasonic transducers comprising support structures coupled to the front surface of the substrate layer, wherein the plurality of ultrasonic transducers generate forward waves and backward waves during operation, the forward waves propagating away from the substrate layer for interaction with an object and the backward waves propagating from the support structures into and through the substrate layer, the support structures having a shape configured to minimize contribution of the backward waves on a signal generated by reflected waves received responsive to the forward waves reflecting off of the object during the operation. 13. The electronic device of claim 12 , wherein the shape of the support structures is configured to control a direction of the backward waves. 14. The electronic device of claim 12 , wherein the shape of the support structures is configured to control a stiffness of the support structures with respect to a stiffness of a membrane of an ultrasonic transducer of the plurality of ultrasonic transducers. 15. The electronic device of claim 12 , wherein the support structures comprise edge support structures and interior support structures disposed within cavities of the plurality of ultrasonic transducers. 16. The electronic device of claim 12 , further comprising: a plurality of substrate structures formed within the back surface of the substrate layer, the plurality of substrate structures configured to modify the backward waves during the operation. 17. The electronic device of claim 16 , wherein the plurality of substrate structures comprises scattering structures configured to modify a direction of the backward waves during the operation. 18. The electronic device of claim 16 , wherein the plurality of substrate structures comprises absorption structures comprising acoustic absorption material to modify an amplitude of the backward waves during the operation. 19. The electronic device of claim 12 , further comprising a mounting substrate comprising a plurality of absorption structures, wherein the mounting substrate is coupled to the back surface of the substrate layer. 20. An electronic device comprising: a substrate layer having a front surface and a back surface opposite the front surface; and a plurality of ultrasonic transducers formed on the front surface of the substrate layer, wherein the plurality of ultrasonic transducers generate forward waves and backward waves during operation, the forward waves propagating away from the substrate layer for interaction with an object and the backward waves propagating into and through the substrate layer; and a mounting substrate comprising a plurality of absorption structures comprising acoustic absorption material to reduce an amplitude of the backward waves during the operation, wherein the mounting substrate is coupled to the back surface of the substrate layer. 21. The electronic device of claim 20 , further comprising: a second plurality of absorption structures formed within the back surface of the substrate layer, the second plurality of absorption structures comprising the acoustic absorption material to modify the amplitude of the backward waves during the operation. 22. The electronic device of claim 21 , wherein the acoustic absorption material is configured to bond the substrate layer to the mounting substrate. 23. The electronic device of claim 21 , wherein plurality of absorption structures are aligned with support structures of the second plurality of absorption structures. 24. The electronic device of claim 20 , further comprising: a plurality of spacers coupled to the back surface of the substrate layer and a surface of the mounting

Assignees

Inventors

Classifications

  • B06B1/0622Primary

    on one surface · CPC title

  • Devices for damping, suppressing, obstructing or conducting sound in acoustic devices (G10K1/06 - G10K1/10 take precedence; for electro-mechanical transducers for communication H04R3/002) · CPC title

  • and a damping structure · CPC title

  • using piezoelectric devices · CPC title

  • using reflection, e.g. parabolic reflectors · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US11517938B2 cover?
An electronic device includes a substrate layer having a front surface and a back surface opposite the front surface, a plurality of ultrasonic transducers formed on the front surface of the substrate layer, wherein the plurality of ultrasonic transducers generate backward waves during operation, the backward waves propagating through the substrate layer, and a plurality of substrate structures…
Who is the assignee on this patent?
Invensense Inc
What technology area does this patent fall under?
Primary CPC classification B06B1/0622. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Dec 06 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).