Semiconductor light emitting device and method of fabricating the same

Patent metadata

Field	Value
Publication number	US-11515449-B2
Application number	US-202016935356-A
Country	US
Kind code	B2
Filing date	Jul 22, 2020
Priority date	Nov 21, 2019
Publication date	Nov 29, 2022
Grant date	Nov 29, 2022

Abstract

Semiconductor light emitting devices and methods of fabricating the same are provided. The semiconductor light emitting device includes a light emitting structure, a first electrode, a first dielectric layer, a second electrode, and a vertical conductive pattern. The light emitting structure includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked, and includes a first opening that penetrates the second semiconductor layer and the active layer, the first opening exposing the first semiconductor layer. The first electrode fills at least a portion of the first opening. The first dielectric layer is on the first electrode. The second electrode is on the light emitting structure and covers the first dielectric layer, the second electrode being electrically connected to the second semiconductor layer. The vertical conductive pattern surrounds outer lateral surfaces of the light emitting structure and is electrically connected to the first electrode.

First claim

What is claimed is:

1. A semiconductor light emitting device comprising:
a light emitting structure that includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked, and that includes a first opening that penetrates the second semiconductor layer and the active layer, the first opening exposing the first semiconductor layer;
a first electrode that fills at least a portion of the first opening;
a first dielectric layer on the first electrode and filling an upper portion of the first opening;
a second electrode on the light emitting structure and covering the first dielectric layer, the second electrode being electrically connected to the second semiconductor layer; and
a vertical conductive pattern that surrounds outer lateral surfaces of the light emitting structure and is electrically connected to the first electrode,
wherein a lateral surface of the first electrode is in contact with a portion of the first semiconductor layer that is exposed by the first opening.

2. The semiconductor light emitting device of claim 1 , wherein
the second electrode vertically overlaps the first electrode, and
a planar shape of the second electrode is greater than a planar shape of the first electrode.

3. The semiconductor light emitting device of claim 1 , wherein the first dielectric layer is in the first opening and covers a lateral surface of the active layer, the lateral surface of the active layer being exposed by an inner lateral surface of the first opening.

4. The semiconductor light emitting device of claim 1 , wherein the light emitting structure further includes a recess that penetrates the second semiconductor layer and the active layer, the recess exposing the first semiconductor layer,
wherein a depth of the recess from a top surface of the second semiconductor layer is less than a depth of the first opening from the top surface of the second semiconductor layer, and
wherein, when viewed in plan, the first opening penetrates a central portion of the recess.

5. The semiconductor light emitting device of claim 4 , wherein the top surface of the first electrode is at a level higher than a level of a bottom surface of the second semiconductor layer, and
in the recess, the lateral surface of the first electrode is spaced apart from the second semiconductor layer.

6. The semiconductor light emitting device of claim 1 , wherein a distance from an inner lateral surface of the first opening to an outer lateral surface of the light emitting structure is about 1 μm to about 100 μm.

7. The semiconductor light emitting device of claim 1 , further comprising a device isolation layer between the vertical conductive pattern and the outer lateral surfaces of the light emitting structure, the device isolation layer surrounding the light emitting structure.

8. A semiconductor light emitting device comprising:
a light emitting structure that includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked, and that includes a first opening that penetrates the second semiconductor layer and the active layer, the first opening exposing the first semiconductor layer;
a first electrode that fills at least a portion of the first opening;
a first dielectric layer on the first electrode and filling an upper portion of the first opening;
a second electrode on the light emitting structure and covering the first dielectric layer, the second electrode being electrically connected to the second semiconductor layer; and
a vertical conductive pattern that surrounds outer lateral surfaces of the light emitting structure and is electrically connected to the first electrode,
wherein a top surface of the first electrode is at a level lower than a level of a bottom surface of the second semiconductor layer.

9. A semiconductor light emitting device comprising:
a light emitting structure that includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked, and that includes a first opening that penetrates the second semiconductor layer and the active layer, the first opening exposing the first semiconductor layer;
a first electrode that fills at least a portion of the first opening;
a first dielectric layer on the first electrode;
a second electrode on the light emitting structure and covering the first dielectric layer, the second electrode being electrically connected to the second semiconductor layer; and
a vertical conductive pattern that surrounds outer lateral surfaces of the light emitting structure and is electrically connected to the first electrode,
wherein the first electrode includes an extension portion in contact with the vertical conductive pattern, the extension portion horizontally penetrating the first semiconductor layer and extending toward an outer lateral surface of the light emitting structure,
wherein the extension portion is spaced apart from the active layer.

10. The semiconductor light emitting device of claim 9 , wherein the first dielectric layer extends onto a top surface of the extension portion.

11. A semiconductor light emitting device comprising:
a light emitting structure that includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked;
a first opening that penetrates the second semiconductor layer and the active layer, the first opening exposing the first semiconductor layer;
a first electrode that fills a lower portion of the first opening to cover the first semiconductor layer exposed by the first opening and contacts the first semiconductor layer exposed by the first opening;
a second electrode that covers the second semiconductor layer and the first electrode; and
a first dielectric layer between the first electrode and the second electrode.

12. The semiconductor light emitting device of claim 11 , wherein the first electrode is below a central portion of the second electrode.

13. The semiconductor light emitting device of claim 12 , wherein, when viewed in plan, lateral surfaces of the first electrode are spaced toward the central portion of the second electrode from lateral surfaces of the second electrode.

14. The semiconductor light emitting device of claim 11 , wherein the lower portion of the first opening is at a level lower than a level of the active layer and the first opening has an upper portion on the lower portion.

15. The semiconductor light emitting device of claim 14 , wherein the first dielectric layer fills the upper portion of the first opening.

16. The semiconductor light emitting device of claim 14 , wherein a width of the upper portion of the first opening is greater than a width of the lower portion of the first opening.

17. The semiconductor light emitting device of claim 11 , wherein the first electrode vertically penetrates the first semiconductor layer and is exposed on a bottom surface of the first semiconductor layer.

18. The semiconductor light emitting device of claim 11 , wherein a portion of the first electrode extends to and is exposed on an outer lateral surface of the light emitting structure,
wherein the portion of the first electrode is at a level lower than a level of a bottom surface of the active layer.

19. The semiconductor light emitting device of claim 11 , further comprising:
a device isolation layer that surrounds the light emitting structure and covers outer lateral surfaces of the light emitting structure; and
a conductive pattern that

Assignees

• Samsung Electronics Co Ltd

Inventors

• Yang Jongin
• Kim Yongil
• Kim Juhyun
• Sakong Tan
• Seo Jonguk
• Jo Suhyun

Classifications

• H01L2933/0016

  Electricity · mapped topic

• H01L33/387 Primary

  Electricity · mapped topic

• H01L33/62

  Electricity · mapped topic

• H10H20/857 Primary

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title

• H10H20/821

  of the light-emitting regions, e.g. non-planar junctions · CPC title