Generating optical pulses via a soliton state of an optical microresonator coupled with a chip based semiconductor laser

Patent metadata

Field	Value
Publication number	US-11513419-B2
Application number	US-201817276589-A
Country	US
Kind code	B2
Filing date	Sep 17, 2018
Priority date	Sep 17, 2018
Publication date	Nov 29, 2022
Grant date	Nov 29, 2022

Abstract

A light pulse source and method for generating repetitive optical pulses are described. The light pulse source includes a continuous wave cw laser device, an optical waveguide optically coupled with the laser device, an optical microresonator, and a tuning device. The optical microresonator coupling cw laser light via the waveguide into the microresonator, which, may include, a light field in a soliton state with soliton shaped pulses coupled out of the microresonator for providing the repetitive optical pulses. The laser device includes a chip based semiconductor laser, the microresonator and/or the waveguide may reflect an optical feedback portion of light back to the semiconductor laser, which may provide self-injection locking relative to a resonance frequency of the microresonator. The tuning device is arranged for tuning at least one of a driving current and a temperature of the semiconductor laser such that the microresonator may provide the soliton state.

First claim

The invention claimed is:

1. A light pulse source, being adapted for generating repetitive optical pulses, comprising:
a continuous wave laser device being arranged for providing continuous wave laser light,
an optical waveguide being optically coupled with the continuous wave laser device,
an optical microresonator being made of a resonator material, which has a third order (Kerr) nonlinearity and an anomalous resonator dispersion, wherein the continuous wave laser device and the optical microresonator are arranged on a common chip substrate device for coupling the continuous wave laser light via the optical waveguide into the optical microresonator, which is configured to include, at a predetermined output frequency of the continuous wave laser device, a light field in a soliton state, so that soliton shaped pulses are coupled out of the optical microresonator for providing the repetitive optical pulses, and
a tuning device being arranged for adjusting the output frequency of the continuous wave laser device, wherein
the continuous wave laser device comprises a chip based semiconductor laser,
at least one of the optical microresonator and the optical waveguide is adapted for back-reflecting an optical feedback portion of light to the semiconductor laser, which is configured for getting self injection locking relative to a resonance frequency of the optical microresonator by the effect of the optical feedback portion, and
the tuning device is arranged for tuning at least one of a driving current and a temperature of the semiconductor laser such that the optical microresonator is configured for providing the soliton state.

2. The light pulse source according to claim 1 , wherein
the semiconductor laser has a linewidth in a range from 10 cm −1 to 500 cm −1 .

3. The light pulse source according to claim 1 , wherein
the semiconductor laser comprises a single-mode laser diode.

4. The light pulse source according to claim 1 , wherein
the semiconductor laser comprises a multi-frequency laser diode.

5. The light pulse source according to claim 1 , wherein
the common chip substrate device comprises an integral chip substrate carrying both of the semiconductor laser and the optical microresonator.

6. The light pulse source according to claim 1 , wherein
the common chip substrate device comprises a hybrid chip substrate with a first chip carrying the semiconductor laser and a second chip carrying the optical microresonator, wherein the first and second chips are bonded to each other.

7. The light pulse source according to claim 1 , wherein
the tuning device is arranged for setting a first operation condition of the semiconductor laser, wherein self injection locking between the semiconductor laser and the optical microresonator is provided, and a second operation condition of the semiconductor laser, wherein the soliton state of the light field in the optical microresonator is provided.

8. The light pulse source according to claim 7 , further comprising
a sensor device being arranged for detecting the first and second operation conditions of the semiconductor laser.

9. The light pulse source according to claim 8 , wherein
the sensor device is arranged for monitoring an output power of the optical microresonator.

10. The light pulse source according to claim 1 , wherein
the optical waveguide does not include a frequency filter section.

11. The light pulse source according to claim 1 , wherein the tuning device is arranged for controlling the temperature of the semiconductor laser, wherein
the tuning device includes a heating element being arranged for setting a temperature of a continuous wave laser device carrying a section of the chip substrate device.

12. The light pulse source according to claim 1 , wherein
at least one of the optical microresonator and the optical waveguide at an output side of the optical microresonator includes a reflective structure being configured for reflecting the optical feedback portion of light back to the semiconductor laser.

13. The light pulse source according to claim 12 , wherein
the reflective structure comprises at least one of a grating or an indentation structure created at the at least one of the optical microresonator and the optical waveguide.

14. A light pulse generation method, which includes generating repetitive optical pulses, comprising the steps of:
creating continuous wave laser light with a continuous wave laser device,
optically coupling the continuous wave laser light via an optical waveguide into an optical microresonator being made of a resonator material, which has a third order (Kerr) nonlinearity and an anomalous resonator dispersion, wherein the continuous wave laser device and the optical microresonator are arranged on a common chip substrate,
adjusting the output frequency of the continuous wave laser device such that, at a predetermined output frequency of the continuous wave laser device, the optical microresonator creates a light field in a soliton state, and
coupling soliton shaped pulses out of the optical microresonator for providing the repetitive optical pulses, wherein
the continuous wave laser device comprises a chip based semiconductor laser,
an optical feedback portion of light is back-reflected from at least one of the optical microresonator and the optical waveguide to the semiconductor laser,
the semiconductor laser gets self injection locking relative to a resonance frequency of the optical microresonator by the effect of the optical feedback portion, and
the adjusting step includes tuning at least one of a driving current and a temperature of the semiconductor laser such that the optical microresonator creates the light field in the soliton state.

15. The light pulse generation method according to claim 14 , wherein
the continuous wave laser light is created with a linewidth in a range from 10 cm −1 to 500 cm −1 .

16. The light pulse generation method according to claim 14 , wherein
the continuous wave laser light comprises single-mode laser light.

17. The light pulse generation method according to claim 16 , wherein
the continuous wave laser light comprises single-mode laser light with a linewidth in a range from 100 kHz to 5 MHz.

18. The light pulse generation method according to claim 14 , wherein
the continuous wave laser light comprises multi-frequency laser light.

19. The light pulse generation method according to claim 14 , wherein
the adjusting step includes setting a first operation condition of the semiconductor laser, wherein self injection locking between the semiconductor laser and the optical microresonator is provided, and a second operation condition of the semiconductor laser, wherein the soliton state of the light field in the optical microresonator is provided.

20. The light pulse generation method according to claim 19 , further comprising a step of
detecting the first and second operation conditions of the semiconductor laser.

21. The light pulse generation method according to claim 20 , wherein
the detecting step includes monitoring an output power of the optical microresonator.

22. The light pulse generation method according to claim 14 , wherein
the step of optically coupling the continuous wave laser light via the optical waveguide into the optical microresonator does not include frequency filtering in a section of the optical waveguide.

23. The light pulse generation method according to claim 14 ,

Assignees

• Ecole Polytechnique Fed Lausanne Epfl

Inventors

• Kippenberg Tobias
• Gorodetsky Michael L
• Raja Arslan Sajid
• Guo hairun

Classifications

• G02F1/365

  in an optical waveguide structure (G02F1/377, {G02F1/395} take precedence) · CPC title

• G02F1/3513 Primary

  Soliton propagation · CPC title

• G02F1/3536

  Four-wave interaction · CPC title

• H01S5/0656

  Seeding, i.e. an additional light input is provided for controlling the laser modes, for example by back-reflecting light from an external optical component (H01S5/14, H01S5/4062 and H01S5/4006 take precedence) · CPC title

• G02F2203/56

  Frequency comb synthesizer · CPC title