Color filter and manufacturing method thereof, and display device

US11513386B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11513386-B2
Application numberUS-201916626543-A
CountryUS
Kind codeB2
Filing dateDec 18, 2019
Priority dateDec 2, 2019
Publication dateNov 29, 2022
Grant dateNov 29, 2022

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A color filter and a manufacturing method thereof, and a display device are provided. The color filter includes a color filter substrate, a plurality of sub-pixel regions, wherein each of the sub-pixel regions includes a first signal region, a second signal region, and a laser path disposed between the first signal region and the second signal region, a first light-shielding sheet disposed on the first signal region and covered with a first indium tin oxide layer, and a second light-shielding sheet disposed on the second signal region and covered with a second indium tin oxide layer. Wherein, the first signal region receives signals through the first indium tin oxide layer, and the second signal region receives signals through the second indium tin oxide layer, therefore improving the problem of signal transmission delay caused by the regional signal impedance difference of the indium tin oxide layer.

First claim

Opening claim text (preview).

What is claimed is: 1. A color filter, comprising: a color filter substrate; a plurality of sub-pixel regions disposed on the color filter substrate, wherein each of the sub-pixel regions comprises a first signal region, a second signal region, and a laser path disposed between the first signal region and the second signal region; a first light-shielding sheet disposed on the first signal region, and covered with a first indium tin oxide layer; and a second light-shielding sheet disposed on the second signal region, and covered with a second indium tin oxide layer; wherein the first signal region receives signals through the first indium tin oxide layer, and the second signal region receives signals through the second indium tin oxide layer; wherein a path width of the laser path is greater than 450 μm. 2. The color filter as claimed in claim 1 , wherein a region of the first light-shielding sheet is less than a region of the second light-shielding sheet, the first signal region receives a low-voltage signal through the first indium tin oxide layer, and the second signal region receives a high-voltage signal through the second indium tin oxide layer. 3. The color filter as claimed in claim 1 , wherein a region of the first signal region is less than a region of the second signal region, the first signal region receives a low-voltage signal through the first indium tin oxide layer, and the second signal region receives a high-voltage signal through the second indium tin oxide layer. 4. A method of manufacturing a color filter, comprising: forming a substrate, wherein the substrate comprises a plurality of sub-pixel regions; forming a first light-shielding sheet and a second light-shielding sheet in each of the sub-pixel regions of the substrate; forming an indium tin oxide layer on the first light-shielding sheet and the second light-shielding sheet; and lasering the indium tin oxide layer to form a laser path; wherein the laser path separates the indium tin oxide layer into a first indium tin oxide layer covering the first light-shielding sheet, and a second indium tin oxide layer covering the second light-shielding sheet; and separates the sub-pixel region into a first signal region comprising the first light-shielding sheet and first indium tin oxide layer, and a second signal region comprising the second light-shielding sheet and the second indium tin oxide layer; and wherein a path width of the laser path is greater than 450 μm. 5. The method of manufacturing the color filter as claimed in claim 4 , wherein a region of the first light-shielding sheet is less than a region of the second light-shielding sheet, the first signal region receives a low-voltage signal through the first indium tin oxide layer, and the second signal region receives a high-voltage signal through the second indium tin oxide layer. 6. The method of manufacturing the color filter as claimed in claim 4 , wherein a region of the first signal region is less than a region of the second signal region, the first signal region receives a low-voltage signal through the first indium tin oxide layer, and the second signal region receives a high-voltage signal through the second indium tin oxide layer. 7. A display device, comprising: a first substrate a plurality of metal layers disposed on the first substrate; a passivation layer covering the first substrate and the plurality of metal layers; a plurality of color resists disposed on the passivation layer; a planarization layer covering the plurality of color resists and the passivation layer; the color filter as claimed in claim 1 , disposed on another side opposite to the first substrate of the display device; and a spacer layer comprising a first surface and a second surface, wherein the first surface contacts the planarization layer, and the second surface contacts the first indium tin oxide layer and the second indium tin oxide layer; wherein disposing positions of the plurality of color resists are aligned below a disposing position of the laser path. 8. The display device as claimed in claim 7 , wherein a path width of the laser path is greater than 450 μm. 9. The display device as claimed in claim 7 , wherein the plurality of color resists are stacked on the passivation layer, and a width of an overlapping portion of the plurality of color resists is greater than a width of the laser path. 10. The display device as claimed in claim 7 , wherein a region of the first light-shielding sheet is less than a region of the second light-shielding sheet, the first signal region receives a low-voltage signal through the first indium tin oxide layer, and the second signal region receives a high-voltage signal through the second indium tin oxide layer. 11. The display device as claimed in claim 7 , wherein a region of the first signal region is less than a region of the second signal region, the first signal region receives a low-voltage signal through the first indium tin oxide layer, and the second signal region receives a high-voltage signal through the second indium tin oxide layer. 12. The display device as claimed in claim 7 , wherein the first substrate and the color filter substrate are glass substrates. 13. The display device as claimed in claim 7 , wherein a distance between the first light-shielding sheet and the second light-shielding sheet of the laser path is greater than 450 μm, and is not greater than 2 times an applied laser accuracy. 14. The display device as claimed in claim 7 , wherein the plurality of color resists are stacked on the passivation layer, and a width of the overlapping portion of the plurality of color resists is greater than a distance between the first light-shielding sheet and the second light-shielding sheet of the laser path.

Assignees

Inventors

Classifications

  • in the form of arrays · CPC title

  • by laser ablation · CPC title

  • Methods for their manufacture, e.g. printing, electro-deposition or photolithography · CPC title

  • Planarisation layers · CPC title

  • having a patterned common electrode · CPC title

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What does patent US11513386B2 cover?
A color filter and a manufacturing method thereof, and a display device are provided. The color filter includes a color filter substrate, a plurality of sub-pixel regions, wherein each of the sub-pixel regions includes a first signal region, a second signal region, and a laser path disposed between the first signal region and the second signal region, a first light-shielding sheet disposed on t…
Who is the assignee on this patent?
Shenzhen China Star Optoelectronics Semiconductor Display Tech Co Ltd
What technology area does this patent fall under?
Primary CPC classification G02F1/133516. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Nov 29 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).